Methods of forming self-aligned vias

Patent metadata

Field	Value
Publication number	US-11094544-B2
Application number	US-201916522226-A
Country	US
Kind code	B2
Filing date	Jul 25, 2019
Priority date	Sep 30, 2016
Publication date	Aug 17, 2021
Grant date	Aug 17, 2021

Abstract

Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.

First claim

What is claimed is:

1. An electronic device comprising:
a first material and a second material on a substrate, the first material comprising a metal selected from the group consisting of Co, Mo, W, Ta, Ti, Ru, Rh, Cu, Fe, Mn, V, Nb, Hf, Zr, Y, Al, Sn, Cr, La and combinations thereof, and the second material comprising a dielectric, the first material extending along a first direction and recessed below a top portion of the second material;
a third material on the first material and the second material, the third material comprising a dielectric and having at least one opening aligned with the first material along the first direction and a second direction, the at least one opening extending along a third direction; and
a gapfill metal filling the at least one opening of the third material therethrough to the first material and forming an electrical contact with the first material, the gapfill metal comprising one or more of titanium, hafnium, zirconium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, manganese, rhenium, technetium, iron, aluminum, or gallium, the gapfill metal is self-aligned with the first material along the first direction and the second direction.

2. The electronic device of claim 1 , wherein the third material is different from the second material and wherein the gapfill metal is different from the first material.

3. An intermediate electronic device comprising:
a first material and a second material on a substrate, the first material comprising a metal selected from the group consisting of Co, Mo, W, Ta, Ti, Ru, Rh, Cu, Fe, Mn, V, Nb, Hf, Zr, Y, Al, Sn, Cr, La and combinations thereof, the second material comprising a dielectric, the substrate having a first surface and a second surface, the first material extending along a first direction and recessed below a top portion of the second material;
a mask on the first material and the second material, the mask having an opening exposing at least a portion of the first surface and the second surface; and
an expansion extending straight up from the first surface through the opening, the expansion self-aligned with the first material along the first direction and a second direction.

4. The intermediate electronic device of claim 3 , wherein the expansion comprises a metal selected from the group consisting of Co, Mo, W, Ta, Ti, Ru, Rh, Cu, Fe, Mn, V, Nb, Hf, Zr, Y, Al, Sn, Cr, La and combinations thereof.

Assignees

• Applied Materials Inc

Inventors

• Thompson David
• Schmiege Benjamin
• Anthis Jeffrey W
• Mallick Abhijit Basu
• Roy Susmit Singha
• Duan Ziqing
• Chen Yihong
• Chan Kelvin
• Gandikota Srinivas

Classifications

• H10W20/4437

  the principal metal being a transition metal · CPC title

• H10W20/0693

  by forming self-aligned vias · CPC title

• H10P95/00 Primary

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P76/4083

  characterised by their behaviours during the lithography processes, e.g. soluble masks or redeposited masks · CPC title