Electronic devices with semiconductor die coupled to a thermally conductive substrate
US-9589860-B2 · Mar 7, 2017 · US
US11031364B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11031364-B2 |
| Application number | US-201815914761-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 7, 2018 |
| Priority date | Mar 7, 2018 |
| Publication date | Jun 8, 2021 |
| Grant date | Jun 8, 2021 |
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In described examples, a microelectronic device includes a microelectronic die with a die attach surface. The microelectronic device further includes a nanoparticle layer coupled to the die attach surface. The nanoparticle layer may be in direct contact with the die attach surface, or may be coupled to the die attach surface through an intermediate layer, such as an adhesion layer or a contact metal layer. The nanoparticle layer includes nanoparticles having adjacent nanoparticles adhered to each other. The microelectronic die is attached to a package substrate by a die attach material. The die attach material extends into the nanoparticle layer and contacts at least a portion of the nanoparticles.
Opening claim text (preview).
What is claimed is: 1. A microelectronic device, comprising: a microelectronic die having a die attach surface; a nanoparticle layer coupled to and covering a plurality of areas of the die attach surface, the nanoparticle layer including nanoparticles wherein adjacent nanoparticles are adhered to each other; a package substrate having a substrate interface surface coupled to the nanoparticle layer; and a layer of a die attach material connecting the nanoparticle layer to the package substrate at the substrate interface surface, wherein the die attach material extends into the nanoparticle layer and contacts at least a portion of the nanoparticles in an interlocking configuration, and configured to increase a mechanical adhesion between the die attach surface and the package substrate; a gap in and extending through the nanoparticle layer and the die attach material layer, the gap extending from the die attach surface to the substrate interface surface. 2. The microelectronic device of claim 1 , further comprising a metal layer between the die attach surface and the nanoparticle layer, wherein the metal layer contacts the die attach surface and contacts at least a portion of the nanoparticles. 3. The microelectronic device of claim 1 , wherein at least a portion of the nanoparticles are electrically conductive. 4. The microelectronic device of claim 1 , wherein at least a portion of the nanoparticles are electrically insulating. 5. The microelectronic device of claim 1 , wherein the die attach material includes an adhesive material. 6. The microelectronic device of claim 1 , wherein the die attach material includes solder. 7. The microelectronic device of claim 1 , wherein the nanoparticle layer is patterned. 8. The microelectronic device of claim 1 , wherein the microelectronic die includes silicon extending to the die attach surface.
changes in shapes · CPC title
Cross-sectional shape, i.e. in side view · CPC title
comprising metals or metalloids, e.g. silver · CPC title
Encapsulations, e.g. protective coatings · CPC title
of bond wires · CPC title
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