Metal joining structure using metal nanoparticles and metal joining method and metal joining material

Patent metadata

Field	Value
Publication number	US-2016240505-A1
Application number	US-201415024682-A
Country	US
Kind code	A1
Filing date	Nov 11, 2014
Priority date	Nov 11, 2013
Publication date	Aug 18, 2016
Grant date	—

Abstract

The present invention can give a joining structure using metal nanoparticles to join the same types or different types of metal where when one surface metal is Al based, the parts are joined through a joining layer containing Ni nanoparticles, whereby a good joining strength is obtained. Further, by using two joining layers ( 6, 8 ) including metal nanoparticles to sandwich metal foil ( 7 ) so as to form a joining layer and joining the same type or different types of surface metals ( 3 - 4 ) through this joining layer, it is possible to ease the thermal stress due to the difference in amounts of thermal expansion of joined members which have two surface metals.

First claim

1 . A metal joining structure where surface metals of two joined members are joined through a joining layer including metal nanoparticles, wherein the surface metal of at least one said joined member is Al or an Al alloy and said metal nanoparticles are Ni nanoparticles.

2 . The metal joining structure according to claim 1 , wherein at least one surface metal among said joined members is Al or an Al alloy and wherein the content of said Ni nanoparticles in the metal content included in said joining layer is 10 mass % or more.

3 . A metal joining method comprising the steps of forming a joining layer including metal nanoparticles between surface metals of two joined members and heating it to join the two joined members through said joining layer, wherein, the surface metal of at least one said joined member is Al or an Al alloy, said metal nanoparticles are Ni nanoparticles, and the heating temperature is 200° C. or more.

4 . The metal joining method according to claim 3 , wherein at least one surface metal among said joined members is Al or an Al alloy and wherein the content of said Ni nanoparticles in the metal content included in said joining layer is 10 mass % or more.

5 . A metal joining structure where surface metals of two joined members are joined through a joining layer containing metal nanoparticles, wherein said joining layer is formed by a first joining layer containing metal nanoparticles, a metal foil, and a second joining layer containing metal nanoparticles in this order.

6 . The metal joining structure according to claim 5 , wherein, when said metal foil is Al or an Al alloy, said metal nanoparticles are Ni nanoparticles, while, when said metal foil is any one of Ag, Au, or their alloys, said metal nanoparticles are nanoparticles comprised of at least one of Ag, Au, Cu, or Ni.

7 . The metal joining structure according to claim 5 , wherein, when at least one surface metal among said joined members is Al or an Al alloy, the content of Ni nanoparticles in the metal content included in said joining layer is 10 mass % or more, while, when at least one surface metal is any one of Ag, Au, or their alloys, the total of metal nanoparticles which are comprised of at least one of Ag, Au, Cu, or Ni among the metal content included in said joining layer is 10 mass % or more.

8 . The metal joining structure according to claim 1 , wherein at least one of said joined members is comprised of Si, SiC, or a compound semiconductor covered with metal on its surface.

9 . A metal joining method comprising the steps of forming a joining layer including metal nanoparticles between the surface metals of two joined members and heating it to join the surface metals of the two joined members, wherein said joining layer is comprised of a first joining layer containing metal nanoparticles, a metal foil, and a second joining layer containing metal nanoparticles in this order, and wherein, when said metal foil is Al or an Al alloy, said metal nanoparticles are Ni nanoparticles, while, when said metal foil is any one of Ag, Au, or their alloys, said metal nanoparticles are nanoparticles comprised of at least one of Ag, Au, Cu, or Ni, and the heating temperature is 200° C. or more.

10 . The metal joining method according to claim 9 , wherein, when the metal foil included in said joining layer is Al or an Al alloy, the content of Ni nanoparticles is 10 mass % or more, while, when said metal foil is any one of Ag, Au, or their alloys, the total of said metal nanoparticles comprised of at least one of Ag, Au, Cu, or Ni is 10 mass % or more.

11 . A metal joining material comprising of a first joining layer containing metal nanoparticles, a metal foil, and a second joining layer containing metal nanoparticles formed in this order.

12 . The metal joining material according to claim 11 , wherein, when said metal foil is Al or an Al alloy, said metal nanoparticles are Ni nanoparticles, while, when said metal foil is any one of Ag, Au, or their alloys, said metal nanoparticles are nanoparticles comprised of at least one of Ag, Au, Cu, or Ni.

13 . The metal joining structure according to claim 6 , wherein, when at least one surface metal among said joined members is Al or an Al alloy, the content of Ni nanoparticles in the metal content included in said joining layer is 10 mass % or more, while, when at least one surface metal is any one of Ag, Au, or their alloys, the total of metal nanoparticles which are comprised of at least one of Ag, Au, Cu, or Ni among the metal content included in said joining layer is 10 mass % or more.

14 . The metal joining structure according to claim 2 , wherein at least one of said joined members is comprised of Si, SiC, or a compound semiconductor covered with metal on its surface.

15 . The metal joining structure according to claim 5 , wherein at least one of said joined members is comprised of Si, SiC, or a compound semiconductor covered with metal on its surface.

16 . The metal joining structure according to claim 6 , wherein at least one of said joined members is comprised of Si, SiC, or a compound semiconductor covered with metal on its surface.

17 . The metal joining structure according to claim 7 , wherein at least one of said joined members is comprised of Si, SiC, or a compound semiconductor covered with metal on its surface.

Assignees

• Nippon Steel & Sumitomo Metal Corp
• Univ Waseda

Inventors

• Tatsumi Kohei
• Ishikawa Shinji
• Matsubara Norie
• Tanaka Masamoto

Classifications

• H10W90/736

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W72/07533

  Ultrasonic bonding, e.g. thermosonic bonding · CPC title

• H10W72/07341

  Controlling the bonding environment, e.g. atmosphere composition or temperature · CPC title

• H10W72/07331

  Connecting techniques · CPC title