Particle image velocimetry of extreme ultraviolet lithography systems

Patent metadata

Field	Value
Publication number	US-11029324-B2
Application number	US-201916579660-A
Country	US
Kind code	B2
Filing date	Sep 23, 2019
Priority date	Sep 28, 2018
Publication date	Jun 8, 2021
Grant date	Jun 8, 2021

Abstract

A method includes irradiating a target droplet in an extreme ultraviolet light source of an extreme ultraviolet lithography tool with light from a droplet illumination module. Light reflected and/or scattered by the target droplet is detected. Particle image velocimetry is performed to monitor one or more flow parameters inside the extreme ultraviolet light source.

First claim

What is claimed is:

1. A method, comprising:
irradiating a target droplet in an extreme ultraviolet (EUV) light source of an extreme ultraviolet lithography tool with non-ionizing light from a droplet illumination module;
detecting light reflected and/or scattered by the target droplet; and
performing particle image velocimetry, based on the detected light, to monitor one or more flow parameters inside the EUV light source.

2. The method of claim 1 , further comprising adjusting one or more operating parameters of the EUV light source based on the monitored flow parameters.

3. The method of claim 2 , wherein the monitored flow parameters include:
one or more of a flow pattern of gases, droplets, or debris in the EUV light source;
the droplets and debris propagation direction; and
spatial evolution of a plasma shockwave.

4. The method of claim 3 , further comprising:
monitoring a rate of an amount of droplet and debris depositing on a collector mirror of the EUV light source; and
adjusting the one or more operating parameters of the EUV light source to reduce the rate.

5. The method of claim 4 , further comprising:
mapping the amount of droplet and debris deposited on the collector mirror; and
triggering a cleaning mechanism to clean the collector mirror based on the mapping.

6. The method of claim 4 , further comprising:
mapping the amount of droplet and debris deposited on the collector mirror; and
triggering a replacement mechanism to change the collector mirror based on the mapping.

7. The method of claim 1 , wherein the non-ionizing light irradiating the target droplet has a wavelength of about 1064 nm.

8. The method of claim 1 , wherein a source of the non-ionizing light of the droplet illumination module is a laser.

9. The method of claim 1 , wherein the light reflected and/or scattered by the target droplet is detected by a droplet detection module.

10. The method of claim 9 , wherein the droplet detection module comprises a digital camera.

11. A method, comprising:
irradiating one or more of tin droplets and tin debris in an extreme ultraviolet light source of an extreme ultraviolet lithography tool with non-ionizing light from a droplet illumination module;
detecting light reflected and/or scattered by the one or more of the tin droplets and the tin debris; and
performing particle image velocimetry, based on the detected light, to monitor a rate of an amount of the tin droplets and the tin debris depositing on a collector mirror of the extreme ultraviolet light source.

12. The method of claim 11 , further comprising:
adjusting one or more operating parameters of the extreme ultraviolet light source to reduce the rate.

13. The method of claim 11 , further comprising:
mapping the amount of tin droplets and tin debris deposited on the collector mirror; and
triggering a replacement mechanism to change the collector mirror based on the mapping.

14. The method of claim 11 , further comprising:
mapping the amount of tin droplets and tin debris deposited on the collector mirror; and
determining a half life time of the collector mirror based on the mapping.

15. An apparatus for monitoring flow parameters of particles in an extreme ultraviolet light source of an extreme ultraviolet lithography system, comprising:
a droplet illumination module comprising a radiation source configured to illuminate a target droplet;
a droplet detection module configured to detect light reflected and/or scattered by the target droplet; and
a controller coupled to the droplet illumination module and the droplet detection module and configured to:
perform particle image velocimetry to monitor one or more flow parameters inside the extreme ultraviolet light source.

16. The apparatus of claim 15 , wherein the controller is further programmed to adjust one or more operating parameters of the extreme ultraviolet light source based on the monitored flow parameters.

17. The apparatus of claim 15 , wherein the radiation source comprises a laser.

18. The apparatus of claim 17 , wherein the laser produces a non-ionizing light having a wavelength of about 1064 nm.

19. The apparatus of claim 15 , further comprising a synchronizer that synchronizes the droplet illumination module and the droplet detection module.

20. The apparatus of claim 19 , wherein the controller is further configured to control the synchronizer.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Lai En Hao
• Yang Chi
• Chien Shang-Chieh
• Chen Li-Jui
• Cheng Po-Chung

Classifications

• H05G2/008

  involving an energy-carrying beam in the process of plasma generation · CPC title

• H05G2/0027

  Arrangements for controlling the supply; Arrangements for measurements · CPC title

• H05G2/0094

  Reduction, prevention or protection from contamination; Cleaning · CPC title

• H05G2/0035

  the material containing metals as principal radiation-generating components · CPC title

• G03F7/70033

  by plasma extreme ultraviolet [EUV] sources · CPC title