Semiconductor device with integrated shunt resistor

Patent metadata

Field	Value
Publication number	US-10950509-B2
Application number	US-201916399603-A
Country	US
Kind code	B2
Filing date	Apr 30, 2019
Priority date	May 9, 2018
Publication date	Mar 16, 2021
Grant date	Mar 16, 2021

Abstract

A semiconductor device includes a first chip pad, a power semiconductor chip arranged on the first chip pad and including at least a first and a second power electrode, and a clip connected to the first power electrode. In this case, an integral part of the clip forms a shunt resistor and a first contact finger of the shunt resistor is embodied integrally with the clip.

First claim

The invention claimed is:

1. A semiconductor device, comprising:
a first chip pad;
a power semiconductor chip arranged on the first chip pad and comprising at least a first and a second power electrode; and
a clip connected to the first power electrode;
wherein an integral part of the clip forms a shunt resistor; and
wherein a first contact finger of the shunt resistor is embodied integrally with the clip.

2. The semiconductor device according to claim 1 , wherein a second contact finger of the shunt resistor is embodied integrally with the clip.

3. The semiconductor device according to claim 1 , wherein a distal end of the first contact finger is connected to or forms a first external terminal of the semiconductor device.

4. The semiconductor device according to claim 2 , wherein a distal end of the second contact finger is connected to or forms a second external terminal of the semiconductor device.

5. The semiconductor device according to claim 1 , wherein a distal end of the first contact finger is connected to a first measurement electrode of a semiconductor voltage measuring unit arranged in the semiconductor device.

6. The semiconductor device according to claim 2 , wherein a distal end of the second contact finger is connected to a second measurement electrode of a semiconductor voltage measuring unit arranged in the semiconductor device.

7. The semiconductor device according to claim 5 , wherein the semiconductor voltage measuring unit is embodied monolithically with the power semiconductor chip.

8. The semiconductor device according to claim 5 , wherein the semiconductor voltage measuring unit comprises a semiconductor chip arranged on a main surface of the power semiconductor chip.

9. The semiconductor device according to claim 5 , wherein the semiconductor voltage measuring unit comprises a semiconductor chip arranged laterally next to the power semiconductor chip.

10. The semiconductor device according to claim 1 , wherein a distal end of the clip is connected to or forms an external terminal of the semiconductor device.

11. The semiconductor device according to claim 10 , wherein the external terminal forms a common power terminal of the power semiconductor chip and measurement terminal for measuring a voltage drop across the shunt resistor.

12. The semiconductor device according to claim 1 , further comprising:
a second power semiconductor chip arranged on a second chip pad separated from the first chip pad.

13. The semiconductor device according to claim 12 , wherein the clip electrically connects the first power electrode of the first power semiconductor chip to the second chip pad.

Assignees

• Infineon Technologies Ag

Inventors

• Sander Rainald
• Bemmerl Thomas
• Thiele Steffen

Classifications

• H10W72/07651

  characterised by changes in properties of the strap connectors during connecting · CPC title

• H10W72/60

  Strap connectors, e.g. thick copper clips for grounding of power devices · CPC title

• H10W72/50

  Bond wires · CPC title

• H10W72/07551

  characterised by changes in properties of the bond wires during the connecting · CPC title

• H10W72/926

  Multiple bond pads having different sizes · CPC title