Substrate processing method

Patent metadata

Field	Value
Publication number	US-10903081-B2
Application number	US-201715857774-A
Country	US
Kind code	B2
Filing date	Dec 29, 2017
Priority date	Dec 11, 2015
Publication date	Jan 26, 2021
Grant date	Jan 26, 2021

Abstract

A substrate processing method is provided for performing a plating processing on a substrate having, on a surface thereof, an impurity-doped polysilicon film containing a high concentration of impurities. The substrate processing method includes forming a catalyst layer by supplying, onto the substrate, an alkaline catalyst solution containing a complex of a palladium ion and a monocyclic 5- or 6-membered heterocyclic compound having one or two nitrogen atoms as a heteroatom; and forming a plating layer through electroless plating by supplying a plating liquid onto the substrate after the forming of the catalyst layer.

First claim

We claim:

1. A substrate processing method of performing a plating processing on a substrate having, on a surface thereof, an impurity-doped polysilicon film, the substrate processing method comprising:
forming a catalyst layer by supplying, onto the substrate, an alkaline catalyst solution containing a complex of a palladium ion and a heterocyclic compound and allowing palladium atoms to be coupled to the impurity-doped polysilicon film without being aggregated; and
forming a plating layer through electroless plating by supplying a plating liquid onto the substrate after the forming of the catalyst layer,
wherein the impurity-doped polysilicon film contains impurities and a number of atoms as the impurities is equal to or higher than 10 15 /cm 3 of the impurity-doped polysilicon film, and
the heterocyclic compound is selected from a group consisting of pyrroline, pyrrole, imidazoline, imidazole, pyrazoline, pyrazole, pyrrolidine, imidazolidine, pyrazolidine and piperidine.

2. The substrate processing method of claim 1 ,
wherein the substrate further includes a base member and an insulating film formed between the base member and the impurity-doped polysilicon film.

3. The substrate processing method of claim 1 ,
wherein the heterocyclic compound has a substituent selected from a group consisting of a hydroxyl group, a carboxyl group and a sulfate group.

4. A substrate processing method of performing a plating processing on a substrate having, on a surface thereof, an impurity-doped polysilicon film, the substrate processing method comprising:
forming a catalyst layer by supplying, onto the substrate, an alkaline catalyst solution containing a complex of a palladium ion and a heterocyclic compound and allowing palladium atoms to be coupled to the impurity-doped polysilicon film without being aggregated; and
forming a plating layer through electroless plating by supplying a plating liquid onto the substrate after the forming of the catalyst layer,
wherein the impurity-doped polysilicon film contains impurities and a number of atoms as the impurities is equal to or higher than 10 15 /cm 3 of the impurity-doped polysilicon film, and
the heterocyclic compound is selected from a group consisting of pyrroline, imidazoline, pyrazoline, imidazolidine and pyrazolidine.

Assignees

• Tokyo Electron Ltd

Inventors

• Hoshino Tomohisa
• Fujita Keiichi
• Hamada Masato

Classifications

• H10P14/412

  Deposition of metallic or metal-silicide materials · CPC title

• H10W20/044 Primary

  for electroless plating · CPC title

• H10W20/043

  for electroplating · CPC title

• H10W20/023

  the interconnections being through-semiconductor vias · CPC title

• H10W20/0245

  comprising use of blind vias during the manufacture · CPC title