Aqueous cleaning solution and method of protecting features on a substrate during etch residue removal

Patent metadata

Field	Value
Publication number	US-10844332-B2
Application number	US-201816220216-A
Country	US
Kind code	B2
Filing date	Dec 14, 2018
Priority date	Dec 15, 2017
Publication date	Nov 24, 2020
Grant date	Nov 24, 2020

Abstract

An alkaline wet solution for protecting features on a patterned substrate and a substrate processing method using the alkaline wet solution are described. The method includes providing a patterned substrate containing a low-k material, a metal oxide feature, and an etch residue, performing a treatment process that exposes the patterned substrate to an alkaline wet solution that forms a protective coating on the metal oxide feature, the alkaline wet solution containing a mixture of 1) water, 2) ammonium hydroxide, a quaternary organic ammonium hydroxide, or a quaternary organic phosphonium hydroxide, and 3) dissolved silica, and performing a wet cleaning process that removes the etch residue but not the metal oxide feature that is protected by the protective coating. The patterned substrate can further include a metallization layer and the alkaline wet solution can further contain 4) an inhibitor that protects the metallization layer from etching by the alkaline wet solution.

First claim

What is claimed is:

1. A substrate processing method, comprising:
providing a patterned substrate containing a low-k material, a metal oxide feature, and an etch residue;
performing a treatment process that exposes the patterned substrate to an alkaline wet solution that forms a protective coating on the metal oxide feature, the alkaline wet solution containing a mixture of 1) water, 2) ammonium hydroxide, a quaternary organic ammonium hydroxide, or a quaternary organic phosphonium hydroxide, and 3) dissolved silica;
rinsing the alkaline wet solution from the patterned substrate; and
following the rinsing, performing a wet cleaning process that removes the etch residue but not the metal oxide feature that is protected by the protective coating, wherein the wet cleaning process includes a mixture containing NH 4 OH, H 2 O 2 , and water, or HCl, H 2 O 2 and water.

2. The method of claim 1 , wherein the metal oxide feature includes aluminum oxide (Al 2 O 3 ), hafnium oxide (HfO 2 ), zirconium oxide (ZrO 2 ), or titanium oxide (TiO 2 ).

3. The method of claim 1 , wherein the patterned substrate further contains a metal-containing etch hardmask layer on the low-k material, wherein at least a portion of the etch residue is located on the metal-containing etch hardmask layer.

4. The method of claim 1 , wherein the etch residue contains a polymer.

5. The method of claim 1 , wherein the quaternary organic ammonium hydroxide includes tetramethylammonium hydroxide, tetraethylammonium hydroxide, or tetrabutylammonium hydroxide, and the quaternary organic phosphonium hydroxide includes tetrabutyl phosphonium hydroxide, methyl triphenyl phosphonium hydroxide, ethyl triphenyl phosphonium hydroxide, or tetra-n-butyl phosphonium hydroxide.

6. The method of claim 1 , wherein the pH of the alkaline wet solution is in a range from about 8 to about 13 during the treatment process.

7. The method of claim 1 , wherein the alkaline wet solution is maintained at a temperature between room temperature and about 90° C. during the treatment process.

8. The method of claim 1 , wherein the patterned substrate further includes a metallization layer and the alkaline wet solution further contains 4) an inhibitor that protects the metallization layer from etching by the alkaline wet solution.

9. The method of claim 8 , wherein the metallization layer includes cobalt metal, copper metal, or tungsten metal.

10. The method of claim 8 , wherein the inhibitor contains an azole compound that includes a triazole, a triazole derivative, a tetrazole, or a tetrazole derivative.

11. The method of claim 1 , wherein the rinsing includes rinsing the patterned substrate with de-ionized water (DIW) and isopropyl alcohol (IPA).

12. The method of claim 1 , wherein the amount of ammonium hydroxide is in a range from about 0.01 wt % to about 25 wt %, based on the total weight of the alkaline wet solution, and the amount of dissolved silica is in a range from about 0.005 wt % to about 10 wt %, based on the total weight of the alkaline wet solution.

13. The method of claim 1 , wherein the amount of the quaternary organic ammonium hydroxide is in a range from about 0.01 wt % to about 25 wt %, based on the total weight of the alkaline wet solution, and the amount of the dissolved silica is in a range from about 0.005 wt % to about 15 wt %, based on the total weight of the alkaline wet solution.

14. The method of claim 1 , wherein the amount of the quaternary organic phosphonium hydroxide is in a range from about 0.01 wt % to about 25 wt %, based on the total weight of the alkaline wet solution, and the amount of the dissolved silica is in a range from about 0.005 wt % to about 15 wt %, based on the total weight of the alkaline wet solution.

15. A substrate processing method, comprising:
providing a patterned substrate containing a low-k material, an aluminum oxide feature, and a polymer etch residue;
performing a treatment process that exposes the patterned substrate to an alkaline wet solution to form a protective coating on the aluminum oxide feature, the alkaline wet solution containing a mixture of 1) water, 2) ammonium hydroxide, and 3) dissolved silica;
rinsing the alkaline wet solution from the patterned substrate; and
following the rinsing, performing a wet cleaning process that removes the polymer etch residue but not the aluminum oxide feature that is protected by the protective coating, wherein the wet cleaning process includes a mixture containing NH 4 OH, H 2 O 2 , and water, or HCl, H 2 O 2 and water.

16. The method of claim 15 , wherein the patterned substrate further includes a metallization layer and the alkaline wet solution further contains 4) an inhibitor that protects the metallization layer from etching by the alkaline wet solution, wherein the metallization layer includes cobalt metal, copper metal, or tungsten metal, and the inhibitor contains an azole compound that includes a triazole, a triazole derivative, a tetrazole, or a tetrazole derivative.

17. The method of claim 15 , wherein the rinsing includes rinsing the patterned substrate with de-ionized water (DIW) and isopropyl alcohol (IPA).

18. The method of claim 15 , wherein the amount of ammonium hydroxide is in a range from about 0.01 wt % to about 25 wt %, based on the total weight of the alkaline wet solution, and the amount of dissolved silica is in a range from about 0.005 wt % to about 10 wt %, based on the total weight of the alkaline wet solution.

Assignees

• Tokyo Electron Ltd

Inventors

• Toshima Takayuki
• Marumoto Hiroshi
• Nishiwaki Yoshinori
• Hurd Trace

Classifications

• H10P50/283

  by chemical means · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10W20/081

  by forming openings in the dielectric parts · CPC title

• H10P70/234

  the processing being the formation of vias or contact holes · CPC title

• C11D7/06 Primary

  Hydroxides · CPC title