Cleaning composition and method for cleaning semiconductor wafers after cmp

Patent metadata

Field	Value
Publication number	US-2016201016-A1
Application number	US-201614993837-A
Country	US
Kind code	A1
Filing date	Jan 12, 2016
Priority date	Jan 13, 2015
Publication date	Jul 14, 2016
Grant date	—

Abstract

The invention provides a composition for cleaning contaminants from semiconductor wafers following chemical-mechanical polishing. The cleaning composition contains one or more quaternary ammonium hydroxides, one or more organic amines, one or more metal inhibitors, and water. The invention also provides methods for using the cleaning composition.

First claim

1 . A composition comprising:
(a) one or more quaternary ammonium hydroxides in an amount effective to regulate the pH of the composition to a pH of from about 10 to about 14, (b) one or more organic amines, (c) one or more metal inhibitors selected from purines, azoles, pyrimidines, thiazoles, thiazolinones, polyphenols, barbituric acid derivatives, Schiff bases, and combinations thereof, and (d) water, wherein the composition is suited for removing contaminants from semiconductor wafers following chemical-mechanical polishing.

2 . The composition of claim 1 , wherein the quaternary ammonium hydroxide is ethyltrimethylammonium hydroxide (ETMAH), diethyldimethylammonium hydroxide (DEDMAH), tetraethylammonium hydroxide (TEAM), tetrapropylammonium hydroxide (TPAH), tetrabutylammonium hydroxide (TBAH), tributylmethylammonium hydroxide, tripropylmethylammonium hydroxide, benzyltrimethylammonium hydroxide (BTMAH), trihydroxyethylmethylammonium hydroxide (THEMAH), or any combination thereof.

3 . The composition of claim 2 , wherein the quaternary ammonium hydroxide is trihydroxyethylmethylammonium hydroxide (THEMAH).

4 . The composition of claim 1 , wherein the quaternary ammonium hydroxide is present in an amount of about 0.05% to about 40% by weight based on the total weight of the composition.

5 . The composition of claim 1 , wherein the one or more organic amine is diethanolamine (DEA), triethanolamine (TEA), methyl diethanolamine (MDEA), aminoethylethanolamine (aminoethylaminoethanol, AEAE), triethanolamine, diethanolamine, 2-amino-2-methyl-1-propanol, 3-amino-1-propanol, 2-dimethylamino-2-methylpropanol, 2methylamino ethanol, 1-amino-2-propanol, 2(2-dimethylamino)ethyl)methylamino)ethanol, N,N′-bis(2-hydroxyethyl)ethylenediamine), 2(tert-butylamino)ethanol, 2-dimethylaminoethanol, 2-aminophenol, 1-amino-2-propanol, cysteamine, glycine, diethylenetriamine, pentaethylenehexamine, N,N′-di-tert-butylethylenediamine, N,N′-diethylethylenediamine, ethylenediamine (En), 1,2-diaminopropane (Pn), N-ethylethylenediamine, monoethanolamine (MEA), diglycolamine (DGA), or a combination thereof.

6 . The composition of claim 5 , wherein the organic amine is ethylenediamine (En).

7 . The composition of claim 5 , wherein the organic amine is 1,2-diaminopropane (Pn).

8 . The composition of claim 5 , wherein the organic amine is monoethanolamine (MEA).

9 . The composition of claim 5 , wherein the organic amine is in an amount of from about 0.002% to about 20% by weight based on the total weight of the composition.

10 . The composition of claim 1 , wherein the metal inhibitor is a purine selected from guanine, xanthine, hypoxanthine, theophylline, paraxanthine, theobromine, caffeine, uric acid, adenosine, guanosine, or any combination thereof.

11 . The composition of claim 1 , wherein the metal inhibitor is an azole selected from 3-amino-5-methylpyrazole (3-AMP), 3-amino-1,2,4-triazole (3-ATA), 5-aminotetrazole (5-ATA), 3,5-diamino-1,2,4-triazole (3,5-ATA or guanazole), 1,2,4-triazole (TAZ), 1-amino-1,2,4-triazole, 1,2,3-triazole, 1-amino-1,2,3-triazole, 1-amino-5-methyl-1,2,3-triazole, 2,4,6-triamino-1,3,5-triazine (melamine), 1,2,4-triazole-3-carboxamide, ribavirin, 5-mercapto-1-phenyltetrazole, or any combination thereof.

12 . The composition of claim 1 , wherein the metal inhibitor is a pyrimidine selected from cytosine, isocytosine, folic acid, triamterene, 2-amino-4,6-dihydroxypyrimidine, 2,4-diamino-6-hydroxypyrimidine, 6-aminouracil, or any combination thereof.

13 . The composition of claim 1 , wherein the metal inhibitor is a thiazole or thiazolinone selected from 2-methyl-4-isothiazolin-3-one (MIT), 2-aminothiazole, 2-amino-1,3,4-thiadiazole, 1,2-benzisothiazolin-3-one (BIT), 6-acetyl-2(3H)-benzothiazolone, or any combination thereof.

14 . The composition of claim 1 , wherein the metal inhibitor is a polyphenol selected from catechol, pyrogallol, resorcinol, hydroquinone, gallic acid, or any combination thereof.

15 . The composition of claim 1 , wherein the metal inhibitor is barbituric acid or 1,3-dimethylbarbituric acid.

16 . The composition of claim 1 , wherein the metal inhibitor is a Schiff base selected from compounds prepared by reaction of 1 or 2 equivalents of acetylacetone (ACAC), salicylic aldehyde (SAL), 4-methyl-5-imidazolecarboxaldehyde, pyrrole-2-carboxaldehyde, 2-thiophenecarboxaldehyde, or any combination thereof, with 1 equivalent of hydroxylamine, En, ammonia, alkylamine, or any combination thereof.

17 . The composition of claim 1 , wherein the metal inhibitor is in an amount from about 0.001% to about 10% by weight based on the total weight of the composition.

18 . The composition of claim 1 , wherein the composition further comprises one or more dialkylhydroxylamines or inorganic or organic acid salts thereof.

19 . The composition of claim 18 , wherein the dialkylhydroxylamine is diethylhydroxylamine (DEHA).

20 . The composition of claim 1 , wherein:
(a) the quaternary ammonium hydroxide is present in an amount of from about 0.05% to about 40% by weight based on the total weight of the composition, (b) the organic amine is present in an amount of from about 0.002% to about 20% by weight based on the total weight of the composition, (c) the metal inhibitor is present in an amount of from about 0.001% to about 10% by weight based on the total weight of the composition, (d) water is present in an amount of from about 30% to about 99.9% by weight based on the total weight of the composition; and (e) the pH of the composition is from about 10 to about 14.

21 . A cleaning method comprising (a) providing a semiconductor wafer having contaminants resulting from chemical-mechanical polishing of the semiconductor wafer and (b) contacting the surface of the semiconductor wafer with the composition of claim 1 to remove at least some of the contaminants from the surface of the semiconductor wafer.

22 . The method of claim 21 , wherein the contaminants include abrasive particles, organic residue, metal ions, pad debris and CMP-byproducts, or any combination thereof.

23 . The method of claim 21 , wherein the wafer is a semiconducting wafer comprising metal conductors.

Assignees

• Cabot Microelectronics Corp

Inventors

• Ivanov Roman
• Hung Fernando
• Ko Cheng-Yuan
• Sun Fred

Classifications

• H10P70/277

  the processing being a planarisation of conductive layers · CPC title

• H01L21/02074

  Electricity · mapped topic

• C11D7/3209

  Amines or imines with one to four nitrogen atoms; Quaternized amines · CPC title

• C11D7/3272

  Urea, guanidine or derivatives thereof · CPC title

• C11D11/0047 Primary

  Chemistry & Metallurgy · mapped topic