Method for cleaning exhaust passage for semiconductor crystal manufacturing device
US-2017314162-A1 · Nov 2, 2017 · US
Gallium arsenide crystal body and gallium arsenide crystal substrate
US10822722B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10822722-B2 |
| Application number | US-201716344045-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 4, 2017 |
| Priority date | Jul 4, 2017 |
| Publication date | Nov 3, 2020 |
| Grant date | Nov 3, 2020 |
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Abstract
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In a gallium arsenide crystal body, an etching pit density of the gallium arsenide crystal body is more than or equal to 10 cm −2 and less than or equal to 10000 cm −2 , and an oxygen concentration of the gallium arsenide crystal body is less than 7.0×10 15 atoms·cm −3 . In a gallium arsenide crystal substrate, an etching pit density of the gallium arsenide crystal substrate is more than or equal to 10 cm −2 and less than or equal to 10000 cm −2 , and an oxygen concentration of the gallium arsenide crystal substrate is less than 7.0×10 15 atoms·cm −3 .
First claim
Opening claim text (preview).
The invention claimed is: 1. A gallium arsenide crystal body, wherein an etching pit density of the gallium arsenide crystal body is more than or equal to 10 cm −2 and less than or equal to 10000 cm −2 , an oxygen concentration of the gallium arsenide crystal body is less than 5.0×10 15 atoms·cm −3 , a carbon concentration of the gallium arsenide crystal body is more than or equal to 5.0×10 14 atoms·cm −3 and less than 1.5×10 16 atoms·cm −3 , a specific resistance of the gallium arsenide crystal body is more than or equal to 1.2×10 7 Ω·cm and less than or equal to 5.0×10 8 Ω·cm, and the gallium arsenide crystal body comprising a straight body portion having a cylindrical shape, wherein a diameter of the straight body portion is more than or equal to 100 mm and less than or equal to 305 mm. 2. The gallium arsenide crystal body according to claim 1 , wherein the oxygen concentration is more than or equal to 2.0×10 14 atoms·cm −3 and less than 5.0×10 15 atoms·cm 3 . 3. The gallium arsenide crystal body according to claim 1 , wherein a boron concentration of the gallium arsenide crystal body is less than or equal to 1.0×10 19 atoms·cm −3 . 4. A gallium arsenide crystal substrate, wherein an etching pit density of the gallium arsenide crystal substrate is more than or equal to 10 cm −2 and less than or equal to 10000 cm −2 , an oxygen concentration of the gallium arsenide crystal substrate is less than 5.0×10 15 atoms·cm −3 , a carbon concentration of the gallium arsenide crystal substrate is more than or equal to 5.0×10 14 atoms·cm −3 and less than 1.5×10 16 atoms·cm −3 , a specific resistance of the gallium arsenide crystal substrate is more than or equal to 1.2×10 7 Ω·cm and less than or equal to 5.0×10 8 Ω·cm, and a diameter of the gallium arsenide crystal substrate is more than or equal to 100 mm and less than or equal to 305 mm. 5. The gallium arsenide crystal substrate according to claim 4 , wherein the oxygen concentration is more than or equal to 2.0×10 14 atoms·cm −3 and less than 5.0×10 15 atoms·cm 3 . 6. The gallium arsenide crystal substrate according to claim 4 , wherein a boron concentration of the gallium arsenide crystal substrate is less than or equal to 1.0×10 19 atoms·cm −3 . 7. A gallium arsenide crystal substrate, wherein an etching pit density of the gallium arsenide crystal substrate is more than or equal to 10 cm −2 and less than or equal to 10000 cm −2 , an oxygen concentration of the gallium arsenide crystal substrate is more than or equal to 2.0×10 14 atoms·cm −3 and less than 5.0×10 15 atoms·cm −3 , a carbon concentration of the gallium arsenide crystal substrate is more than or equal to 5.0×10 14 atoms·cm −3 and less than 1.5×10 16 atoms·cm −3 , a boron concentration of the gallium arsenide crystal substrate is less than or equal to 1.0×10 19 atoms·cm −3 , a specific resistance of the gallium arsenide crystal substrate is more than or equal to 1.2×10 7 Ω·cm and less than or equal to 5.0×10 8 Ω·cm, and a diameter of the gallium arsenide crystal substrate is more than or equal to 100 mm and less than or equal to 305 mm.
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Classifications
further characterised by the dopants · CPC title
- C30B29/42Primary
Gallium arsenide · CPC title
Heating or cooling of the melt or the crystallised material · CPC title
- C30B11/00Primary
Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method (C30B13/00, C30B15/00, C30B17/00, C30B19/00 take precedence; under a protective fluid C30B27/00) · CPC title
AIIIBV compounds {wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi} · CPC title
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- What does patent US10822722B2 cover?
- In a gallium arsenide crystal body, an etching pit density of the gallium arsenide crystal body is more than or equal to 10 cm −2 and less than or equal to 10000 cm −2 , and an oxygen concentration of the gallium arsenide crystal body is less than 7.0×10 15 atoms·cm −3 . In a gallium arsenide crystal substrate, an etching pit density of the gallium arsenide crystal substrate is more than or e…
- Who is the assignee on this patent?
- Sumitomo Electric Industries
- What technology area does this patent fall under?
- Primary CPC classification C30B29/42. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Nov 03 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).