GaAs thin films and methods of making and using the same

Patent metadata

Field	Value
Publication number	US-9368670-B2
Application number	US-201514692421-A
Country	US
Kind code	B2
Filing date	Apr 21, 2015
Priority date	Apr 21, 2014
Publication date	Jun 14, 2016
Grant date	Jun 14, 2016

Abstract

Disclosed herein are embodiments of methods for making GaAs thin films, such as photovoltaic GaAs thin films. The methods disclosed herein utilize sources, precursors, and reagents that do not produce (or require) toxic gas and that are readily available and relatively low in cost. In some embodiments, the methods are readily scalable for industrial applications and can provide GaAs thin films having properties that are at least comparable to or potentially superior to GaAs films obtained from conventional methods.

First claim

We claim:

1. A method comprising:
forming a GaAs thin film on a deposition substrate by the steps of
providing a GaAs powder source;
providing a dopant source; and
using vapor transport with a chemical transport agent to deposit the GaAs thin film on the deposition substrate, the GaAs thin film having Hall mobilities of 1000-4200 cm 2 V −1 s −1 for an n-type GaAs thin film and/or 50-240 cm 2 V −1 s −1 for a p-type GaAs thin film.

2. The method of claim 1 , wherein the GaAs thin film is epitaxial.

3. The method of claim 1 , wherein the dopant source is selected from S, Se, Cd, Ge, Si, C, Te, Zn, or combinations thereof.

4. The method of claim 1 , wherein the chemical transport agent is selected from H 2 , H 2 O, I 2 , HCl, or combinations thereof.

5. The method of claim 1 , wherein the vapor transport comprises aqueous vapor transport.

6. A method comprising:
providing a doped GaAs powder source;
depositing a GaAs thin film on a deposition substrate from the doped GaAs powder source using a chemical transport agent in a vapor transport apparatus, the chemical transport agent comprising a carrier gas and H 2 O, the H 2 O concentration being 10 ppm to 12,000 ppm during the deposition; and
wherein the GaAs thin film is capable of producing a photocurrent ranging from 15 mA cm −2 to 25 mA cm −2 under 100 mW cm −2 AM 1.5G illumination.

7. The method of claim 6 , wherein the doped GaAs powder comprises S, Se, Cd, Ge, Si, C, Te, Zn, or combinations thereof.

8. The method of claim 6 , wherein the GaAs thin film comprises a dopant concentration ranging from 10 16 cm −3 to 10 19 cm −3 .

9. The method of claim 6 , wherein the GaAs thin film is epitaxial.

10. A method comprising:
combining a solid GaAs powder with a dopant to form a source composition;
depositing a GaAs thin film on a deposition substrate, from the source composition, using a chemical transport agent in a vapor transport system, in the absence of a toxic gas; and
wherein the GaAs thin film has an L D value of 2 μm to 3 μm or 5 μm to 8 μm.

11. The method of claim 10 , wherein the dopant is selected from S, Se, Cd, Ge, Si, C, Te, Zn, or combinations thereof.

12. The method of claim 10 , wherein the chemical transport agent is selected from H 2 , H 2 O, I 2 , HCl, and combinations thereof.

13. A method comprising making a GaAs thin film on a deposition substrate using a close-spaced vapor transport system, by:
providing a source composition comprising GaAs and a dopant powder mixture;
maintaining a heat source positioned proximate the source composition, at a temperature ranging from 600° C. to 950° C.;
providing the deposition substrate positioned from 0.5 mm to 1.5 mm from the source composition;
maintaining the deposition substrate at a temperature that is 5° C. to 200° C. lower than the temperature of the heat source thereby producing a thermal gradient between the source composition and the deposition substrate;
exposing the source composition to a chemical transport agent in the close-spaced vapor transport system to produce a vapor-phase GaAs precursor composition; and
depositing the GaAs thin film on the deposition substrate using the thermal gradient to facilitate deposition of the vapor-phase GaAs precursor composition.

14. The method of claim 13 , wherein the GaAs thin film is an epitaxial film.

15. The method of claim 13 , wherein the GaAs thin film is a polycrystalline film.

16. The method of claim 13 , wherein the source composition is exposed to the chemical transport agent at atmospheric pressure.

17. The method of claim 13 , wherein the chemical transport agent is selected from H 2 , H 2 O, I 2 , HCl, and combinations thereof.

18. The method of claim 13 , wherein the chemical transport agent is H 2 and H 2 O.

19. The method of claim 13 , wherein the GaAs thin film is deposited on the deposition substrate at a rate of 10 nm per minute to 10 μm per minute.

20. The method of claim 13 , wherein the dopant is selected from S, Se, Cd, Ge, Si, C, Te, Zn, or combinations thereof.

21. The method of claim 13 , wherein the dopant is Te powder and/or Zn powder.

22. The method of claim 13 , wherein the GaAs thin film comprises a dopant concentration ranging from 10 16 cm −3 to 10 19 cm −3 .

Assignees

• Univ Oregon

Inventors

• Boettcher Shannon
• Ritenour Andrew
• Boucher Jason
• Greenaway Ann

Classifications

• H10P14/3438

  Doping during depositing · CPC title

• H10P14/3446

  Transition metal elements; Rare earth elements · CPC title

• H10P14/3444

  P-type · CPC title

• H10P14/3442

  N-type · CPC title

• H10P14/3421

  Arsenides · CPC title