Crucible for crystal growth, crystal growing apparatus provided therewith, and method for growing crystals

Patent metadata

Field	Value
Publication number	US-2016348270-A1
Application number	US-201415116532-A
Country	US
Kind code	A1
Filing date	Oct 8, 2014
Priority date	Feb 27, 2014
Publication date	Dec 1, 2016
Grant date	—

Abstract

A crucible provided with a holding section ( 12 ) for holding a raw material ( 20 ), an initial distillate recovery section ( 14 ) for recovering an initial distillate ( 24 ) when the raw material ( 20 ) held in the holding section ( 12 ) has been vaporized, a main distillate condensing section ( 16 ) for condensing a main distillate when the raw material ( 20 ) held in the holding section ( 12 ) has been vaporized, and a crystal growing section ( 18 ) for holding the main distillate ( 30 ) comprising a raw material melt ( 28 ) condensed by the main distillate condensing section ( 16 ) and producing crystals when crystals are grown from the held main distillate ( 30 ) is used as a crucible ( 10 ) for crystal growth used to grow crystals. This makes it possible to raise the efficiency of manufacturing crystals while achieving high purification of a raw material for semiconductor crystals.

First claim

1 . A crucible for crystal growth comprising:
a retaining section for retaining a raw material; an initial distillate recovery section for recovering an initial distillate when the raw material retained at the retaining section has been vaporized; and a crystal growing section for recovering a main distillate when the raw material retained at the retaining section has been vaporized and growing a crystal.

2 . The crucible for crystal growth according to claim 1 ,
wherein the crucible for crystal growth further has a main distillate condensing section for condensing the main distillate when the raw material retained at the retaining section has been vaporized; and the crystal growing section recovers a raw material melt condensed at the main distillate condensing section and retains the raw material melt.

3 . The crucible for crystal growth according to claim 1 , further comprising a filler for distillation between the retaining section and the crystal growing section.

4 . The crucible for crystal growth according to claim 1 , comprising a coaxial cold trap at an upper part of the initial distillate recovery section.

5 . The crucible for crystal growth according to claim 1 , comprising a parallel cold trap on a side of the initial distillate recovery section.

6 . The crucible for crystal growth according to claim 1 , wherein the crystal growing section further has a zone refining section.

7 . The crucible for crystal growth according to claim 1 , further comprising a seed crystal generating section at a lower part of the crystal growing section.

8 . The crucible for crystal growth according to claim 1 , further comprising a seed crystal selecting section at the lower part of the crystal growing section and a seed crystal generating section at the lower part of the seed crystal selecting section.

9 . The crucible for crystal growth according to claim 1 , further comprising a cooling bar at the lower part of the crystal growing section.

10 . A crystal glowing apparatus having:
the crucible for crystal growth according to claim 1 ; a heating furnace for heating the crucible for crystal growth; and a temperature control section for controlling the temperature of the crucible for crystal growth.

11 . The crystal glowing apparatus according to claim 10 , wherein the temperature control section individually heats and controls the retaining section, the initial distillate recovery section, and the crystal growing section in the crucible for crystal growth.

12 . A method for growing a crystal, comprising the steps of:
charging a raw material to a retaining section of a crucible for crystal growth having the retaining section for retaining the raw material, an initial distillate recovery section for recovering an initial distillate when the raw material retained in the retaining section has been vaporized, and a crystal growing section for recovering a main distillate when the raw material retained in the retaining section has been vaporized and growing a crystal; depressurizing and sealing the crucible for crystal growth; heating the crucible for crystal growth, vaporizing the raw material, and recovering the initial distillate into the initial distillate recovery section and the main distillate into the crystal growing section; and growing a crystal from the main distillate recovered at the crystal growing section.

13 . The method for growing a crystal according to claim 12 ,
wherein a crucible further having a main distillate condensing section for condensing the main distillate when the raw material retained in the retaining section has been vaporized is used as the crucible for crystal growth; and at a step for recovering the main distillate into the crystal growing section, a raw material melt condensed at the main distillate condensing section is recovered at the crystal growing section and retained.

14 . The method for growing a crystal according to claim 12 , wherein a crystal of thallium bromide is grown as a crystal to be grown.

15 . The method for growing a crystal according to claim 13 , wherein, at a step for recovering the initial distillate into the initial distillate recovery section, the temperature of the initial distillate recovery section is set so as to be lower than the temperatures of the retaining section, the main distillate condensing section, and the crystal growing section in the crucible for crystal growth.

16 . The method for growing a crystal according to claim 13 , wherein, at a step for recovering the main distillate into the crystal growing section, in the crucible for crystal growth:
the temperature of the main distillate condensing section is set at a temperature at which the raw material condenses; and the temperature of the initial distillate recovery section is set so as to be lower than the temperatures of the main distillate condensing section and the crystal growing section.

Assignees

• Hitachi Ltd

Inventors

• Kanda Takayuki
• Kominami Shinya
• Ueno Yuichiro
• Ishitsu Takafumi
• Seino Tomoyuki
• Takahashi Isao

Classifications

• C30B35/002

  Crucibles or containers · CPC title

• C30B11/002

  Crucibles or containers for supporting the melt · CPC title

• C30B35/007

  Apparatus for preparing, pre-treating the source material to be used for crystal growth · CPC title

• C30B29/46

  Sulfur-, selenium- or tellurium-containing compounds · CPC title

• C01G15/00

  Compounds of gallium, indium or thallium · CPC title