Metal wiring layer forming method, metal wiring layer forming apparatus and recording medium

Patent metadata

Field	Value
Publication number	US-10755973-B2
Application number	US-201716331612-A
Country	US
Kind code	B2
Filing date	Aug 29, 2017
Priority date	Oct 17, 2016
Publication date	Aug 25, 2020
Grant date	Aug 25, 2020

Abstract

A metal wiring layer can be formed within a recess of a substrate and an unnecessary plating layer is not left on a surface of the substrate. A metal wiring layer forming method includes forming a first plating layer 7 as a protection layer at least on a tungsten or tungsten alloy 4 formed on a bottom surface 3a of a recess 3 of a substrate 2; removing an unnecessary plating layer 7a formed on a surface 2a of the substrate 2; and forming a second plating layer 8 on the first plating layer 7 within the recess 3.

First claim

We claim:

1. A metal wiring layer forming method of forming a metal wiring layer in a substrate, comprising:
preparing the substrate provided with a recess having a lower electrode formed on a bottom surface thereof;
forming a first plating layer as a protection layer at least on the lower electrode of the recess by performing a first plating processing on the substrate;
removing an unnecessary plating layer, which is formed at the same time as the first plating layer is formed to adhere to a surface of the substrate, by cleaning the substrate; and
forming a second plating layer on the first plating layer within the recess by performing a second plating processing on the substrate.

2. The metal wiring layer forming method of claim 1 , further comprising:
supplying a catalyst to the substrate prior to the removing of the unnecessary plating layer; and
removing the catalyst except the catalyst formed on the lower electrode by performing pre-cleaning on the substrate.

3. The metal wiring layer forming method of claim 1 ,
wherein a UV processing or a heating processing is performed on the substrate between the forming of the first plating layer and the removing of the unnecessary plating layer to allow the unnecessary plating layer to be easily removed.

4. The metal wiring layer forming method of claim 1 ,
wherein the lower electrode includes tungsten or tungsten alloy, and
the first plating layer and the second plating layer include cobalt or cobalt alloy.

5. A metal wiring layer forming apparatus configured to form a metal wiring layer on a substrate, comprising:
a first plating layer forming unit configured to form, by performing a first plating processing on a substrate provided with a recess having a lower electrode formed on a bottom surface thereof, a first plating layer as a protection layer at least on the lower electrode of the recess;
an unnecessary plating layer cleaning unit configured to remove an unnecessary plating layer, which is formed at the same time as the first plating layer is formed to adhere to a surface of the substrate, by cleaning the substrate; and
a second plating layer forming unit configured to form a second plating layer on the first plating layer within the recess by performing a second plating processing on the substrate.

6. The metal wiring layer forming apparatus of claim 5 , further comprising:
a catalyst supplying unit configured to supply a catalyst to the substrate; and
a catalyst cleaning unit configured to remove the catalyst except the catalyst formed on the lower electrode by performing pre-cleaning on the substrate.

7. The metal wiring layer forming apparatus of claim 5 , further comprising:
a UV processing unit or heating unit configured to perform a UV processing or a heating processing on the substrate to allow the unnecessary plating layer to be easily removed.

8. A computer-readable recording medium having stored thereon computer-executable instructions that, in response to execution, cause a metal wiring layer forming method to be performed,
wherein the metal wiring layer forming method of forming a metal wiring layer on a substrate comprises:
preparing the substrate provided with a recess having a lower electrode formed on a bottom surface thereof;
forming a first plating layer as a protection layer at least on the lower electrode of the recess by performing a first plating processing on the substrate;
removing an unnecessary plating layer, which is formed at the same time as the first plating layer is formed to adhere to a surface of the substrate, by cleaning the substrate; and
forming a second plating layer on the first plating layer within the recess by performing a second plating processing on the substrate.

Assignees

• Tokyo Electron Ltd

Inventors

• Fujita Keiichi
• IWAI Kazutoshi
• Mizutani Nobutaka

Classifications

• H10W20/4437

  the principal metal being a transition metal · CPC title

• H10P50/667

  by liquid etching only · CPC title

• H10P14/46 Primary

  using a liquid · CPC title

• H10W20/4403

  based on metals, e.g. alloys, metal silicides (H10W20/4484 takes precedence) · CPC title

• H10W20/0526

  by thermal treatment thereof · CPC title