Preparation of lanthanide-containing precursors and deposition of lanthanide-containing films
US-9711347-B2 · Jul 18, 2017 · US
Method of forming a thin film
US10752645B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10752645-B2 |
| Application number | US-201916439369-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 12, 2019 |
| Priority date | Jul 7, 2015 |
| Publication date | Aug 25, 2020 |
| Grant date | Aug 25, 2020 |
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- Title
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Abstract
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A silicon-containing intermediate is synthesized by reacting a lanthanum tris[bis(trialkylsilyl)amide] complex with an alkylcyclopentadiene. A lanthanum compound is synthesized by reacting the silicon-containing intermediate with a dialkylamidine-based compound.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of forming a thin film, the method comprising: forming a lanthanum-containing film on a substrate by using a lanthanum compound that is a liquid at room temperature, the lanthanum compound being represented by the following Chemical Formula 2: wherein R 1 is a C1-C4 linear or branched alkyl group, each of R 2 and R 3 is independently a C1-C4 linear or branched alkyl group, and R 4 is hydrogen or a methyl group. 2. The method as claimed in claim 1 , wherein the lanthanum compound includes one or more compounds represented by the following chemical formulas: 3. The method as claimed in claim 1 , wherein the forming of the lanthanum-containing film is performed at a temperature of about 150° C. to about 500° C. under a pressure that is from atmospheric pressure to a pressure of about 10 Pa. 4. The method as claimed in claim 1 , wherein the forming of the lanthanum-containing film includes: forming a vaporized source gas containing the lanthanum compound; forming a lanthanum source adsorbed layer on the substrate by providing the vaporized source gas onto the substrate; and providing a reactive gas onto the lanthanum source adsorbed layer. 5. The method as claimed in claim 4 , wherein the vaporized source gas contains only the lanthanum compound. 6. The method as claimed in claim 4 , wherein the vaporized source gas contains: the lanthanum compound; and a silicon-containing compound represented by the following Chemical Formula 1: wherein R 1 is a C1-C4 linear or branched alkyl group, and each R X is independently a C1-C2 alkyl group. 7. The method as claimed in claim 4 , wherein the reactive gas includes O 2 , O 3 , plasma O 2 , H 2 O, NO 2 , NO, CO 2 , H 2 O 2 , or a combination thereof. 8. The method as claimed in claim 1 , wherein, in Chemical Formula 2, R 4 is a methyl group. 9. The method as claimed in claim 1 , wherein the lanthanum compound includes one or more compounds represented by the following chemical formulas:
Assignees
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Classifications
Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title
the materials being characterised by the deposition precursor materials · CPC title
the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium · CPC title
Metallocenes · CPC title
of refractory metals or yttrium · CPC title
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Frequently asked questions
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- What does patent US10752645B2 cover?
- A silicon-containing intermediate is synthesized by reacting a lanthanum tris[bis(trialkylsilyl)amide] complex with an alkylcyclopentadiene. A lanthanum compound is synthesized by reacting the silicon-containing intermediate with a dialkylamidine-based compound.
- Who is the assignee on this patent?
- Samsung Electronics Co Ltd, Adeka Corp
- What technology area does this patent fall under?
- Primary CPC classification C07F7/10. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Aug 25 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).