Preparation of lanthanide-containing precursors and deposition of lanthanide-containing films

Patent metadata

Field	Value
Publication number	US-9711347-B2
Application number	US-201615177446-A
Country	US
Kind code	B2
Filing date	Jun 9, 2016
Priority date	Jun 5, 2008
Publication date	Jul 18, 2017
Grant date	Jul 18, 2017

Abstract

Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand.

First claim

What is claimed is:

1. A method of forming a lanthanide-containing film on a substrate, the method comprising the steps of:
introducing at least one lanthanide-containing precursor into a reactor having at least one substrate disposed therein, the lanthanide containing precursor having the formula:
Ln(R 1 Cp) 2 (R 2 —N—C(R 4 )═N—R 2 )

wherein Ln is Sc, Y, La, or Lu; R 1 and R 2 is independently selected from the group consisting of H and a C1-C5 alkyl chain; and R 4 is selected from the group consisting of H and a C1-C5 alkyl chain; and
contacting the lanthanide-containing precursor and the substrate to form a lanthanide-containing film on at least one surface of the substrate using a deposition process.

2. The method of claim 1 , wherein Ln is La.

3. The method of claim 2 , wherein R 2 =iPr.

4. The method of claim 2 , wherein R 4 is H, Me, or Et.

5. The method of claim 2 , wherein R 1 =iPr.

6. The method of claim 5 , wherein R 2 =iPr.

7. The method of claim 2 , wherein R 1 =Et or Me.

8. The method of claim 7 , wherein R 2 =iPr.

9. The method of claim 1 , wherein Ln is Y.

10. The method of claim 9 , wherein R 2 =iPr.

11. The method of claim 9 , wherein R 4 is H, Me, or Et.

12. The method of claim 9 , wherein R 1 =iPr.

13. The method of claim 12 , wherein R 2 =iPr.

14. The method of claim 9 , wherein R 1 =Et or Me.

15. The method of claim 14 , wherein R 2 =iPr.

16. The method of claim 1 , wherein Ln is Sc.

17. The method of claim 16 , wherein R 2 =iPr.

18. The method of claim 16 , wherein R 4 is H, Me, or Et.

19. The method of claim 16 , wherein R 1 =iPr.

20. The method of claim 19 , wherein R 2 =iPr.

21. The method of claim 16 , wherein R 1 =Et or Me.

22. The method of claim 21 , wherein R 2 =iPr.

23. The method of claim 1 , wherein Ln is Lu.

24. The method of claim 23 , wherein R 2 =iPr.

25. The method of claim 23 , wherein R 4 is H, Me, or Et.

26. The method of claim 23 , wherein R 1 =iPr.

27. The method of claim 26 , wherein R 2 =iPr.

28. The method of claim 23 , wherein R 1 =Et or Me.

29. The method of claim 28 , wherein R 2 =iPr.

Assignees

• Air Liquide American

Inventors

• Pallem Venkateswara R
• Dussarrat Christian
• Noh Wontae

Classifications

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title

• H10P14/668

  the materials being characterised by the deposition precursor materials · CPC title

• H10P14/69396 Primary

  the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium · CPC title

• H01L21/02192 Primary

  Electricity · mapped topic