Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic appliance including the semiconductor device, the display device, and the display module

Patent metadata

Field	Value
Publication number	US-10693014-B2
Application number	US-201715421657-A
Country	US
Kind code	B2
Filing date	Feb 1, 2017
Priority date	Feb 28, 2014
Publication date	Jun 23, 2020
Grant date	Jun 23, 2020

Abstract

A change in electrical characteristics is inhibited and reliability is improved in a semiconductor device using a transistor including an oxide semiconductor. One embodiment of a semiconductor device including a transistor includes a gate electrode, first and second insulating films over the gate electrode, an oxide semiconductor film over the second insulating film, and source and drain electrodes electrically connected to the oxide semiconductor film. A third insulating film is provided over the transistor and a fourth insulating film is provided over the third insulating film. The third insulating film includes oxygen. The fourth insulating film includes nitrogen. The amount of oxygen released from the third insulating film is 1×10 19 /cm 3 or more by thermal desorption spectroscopy, which is estimated as oxygen molecules. The amount of oxygen molecules released from the fourth insulating film is less than 1×10 19 /cm 3 .

First claim

What is claimed is:

1. A semiconductor device comprising:
a transistor comprising:
a gate electrode;
a gate insulating film over the gate electrode;
an oxide semiconductor film over the gate insulating film; and
a source electrode and a drain electrode on and in contact with the oxide semiconductor film;

a first insulating film on and in contact with the source electrode, the drain electrode, and the oxide semiconductor film;
a second insulating film on and in contact with the first insulating film; and
a third insulating film on and in contact with the second insulating film,
wherein the gate insulating film includes a first layer comprising silicon nitride and a second layer comprising silicon oxynitride on the first layer,
wherein each of the first insulating film and the second insulating film comprises silicon oxynitride,
wherein the third insulating film comprises silicon nitride,
wherein a thickness of the second insulating film is larger than a thickness of the first insulating film and a thickness of the third insulating film, and
wherein a region of the second insulating film has a spin density corresponding to a signal that appears at g=2.001 lower than 1.5×10 18 spins/cm 3 by electron spin resonance measurement.

2. The semiconductor device according to claim 1 ,
wherein the oxide semiconductor film is provided on and in contact with the second layer of the gate insulating film.

3. The semiconductor device according to claim 1 ,
wherein the oxide semiconductor film comprises O, In, Zn, and M, and
wherein the M is one selected from the group consisting of Ti, Ga, Y, Zr, La, Ce, Nd, and Hf.

4. The semiconductor device according to claim 1 ,
wherein the oxide semiconductor film includes a crystal part, and
wherein the crystal part includes a portion whose c-axis is a parallel to a normal vector of a surface where the oxide semiconductor film is formed.

5. The semiconductor device according to claim 1 ,
wherein the signal that appears at g=2.001 is due to dangling bonds of silicon in the second insulating film.

6. The semiconductor device according to claim 1 ,
wherein an amount of oxygen molecules released from each of the first insulating film and the second insulating film is greater than or equal to 1×10 19 /cm 3 when measured by thermal desorption spectroscopy.

7. The semiconductor device according to claim 1 ,
wherein an amount of oxygen molecules released from the third insulating film is less than 1×10 19 /cm 3 when measured by the thermal desorption spectroscopy.

8. The semiconductor device according to claim 1 , wherein the thickness of the third insulating film is larger than the thickness of the first insulating film.

9. A display device comprising the semiconductor device according to claim 1 .

10. A display module comprising:
the display device according to claim 9 ; and
a touch sensor.

11. An electronic appliance comprising:
the semiconductor device according to claim 1 ; and
at least one of an operation key and a battery.

12. A semiconductor device comprising:
a transistor comprising:
a gate electrode;
a first insulating film over the gate electrode;
a second insulating film on and in contact with the first insulating film;
an oxide semiconductor film on and in contact with the second insulating film; and
a source electrode and a drain electrode on and in contact with first regions of the oxide semiconductor film;

a third insulating film on and in contact with the source electrode, the drain electrode, and a second region of the oxide semiconductor film;
a fourth insulating film on and in contact with the third insulating film; and
a fifth insulating film on and in contact with the fourth insulating film,
wherein each of the second insulating film, the third insulating film, and the fourth insulating film comprises silicon oxynitride,
wherein each of the first insulating film and the fifth insulating film comprises silicon nitride,
wherein a thickness of the fourth insulating film is larger than a thickness of the third insulating film and a thickness of the fifth insulating film, and
wherein a region of the fourth insulating film has a spin density corresponding to a signal that appears at g=2.001 lower than 1.5×10 18 spins/cm 3 by electron spin resonance measurement.

13. The semiconductor device according to claim 12 ,
wherein the oxide semiconductor film comprises O, In, Zn, and M, and
wherein the M is one selected from the group consisting of Ti, Ga, Y, Zr, La, Ce, Nd, and Hf.

14. The semiconductor device according to claim 12 ,
wherein the oxide semiconductor film includes a crystal part, and
wherein the crystal part includes a portion whose c-axis is a parallel to a normal vector of a surface where the oxide semiconductor film is formed.

15. The semiconductor device according to claim 12 ,
wherein the signal that appears at g=2.001 is due to dangling bonds of silicon in the fourth insulating film.

16. The semiconductor device according to claim 12 , wherein an amount of oxygen molecules released from each of the third insulating film and the fourth insulating film is greater than or equal to 1×10 19 /cm 3 when measured by thermal desorption spectroscopy.

17. The semiconductor device according to claim 12 ,
wherein an amount of oxygen molecules released from the fifth insulating film is less than 1×10 19 /cm 3 when measured by the thermal desorption spectroscopy.

18. The semiconductor device according to claim 12 ,
wherein the thickness of the fifth insulating film is larger than the thickness of the third insulating film.

19. A display device comprising the semiconductor device according to claim 12 .

20. A display module comprising:
the display device according to claim 19 ; and
a touch sensor.

21. An electronic appliance comprising:
the semiconductor device according to claim 12 ; and
at least one of an operation key and a battery.

22. A semiconductor device comprising:
a transistor comprising:
a gate electrode;
a gate insulating film over the gate electrode;
an oxide semiconductor film over the gate insulating film; and
a source electrode and a drain electrode on and in contact with the oxide semiconductor film;

a first insulating film on and in contact with the source electrode, the drain electrode, and the oxide semiconductor film;
a second insulating film on and in contact with the first insulating film; and
a third insulating film on and in contact with the second insulating film,
wherein the gate insulating film includes a first layer comprising silicon nitride and a second layer comprising silicon oxynitride on the first layer,
wherein each of the first insulating film and the second insulating film comprises silicon oxynitride,
wherein the third insulating film comprises silicon nitride, and
wherein a thickness of the second insulating film is larger than a thickness of the first insulating film and a thickness of the third insulating film.

23. The semiconductor device according to claim 22 ,
wherein the oxide semiconductor film is provided on and in contact with the second layer of the gate insulating film.

24. The semiconductor device according to claim 22 ,
wherein the oxide semiconductor film comprises O, In, Zn, and M, and
wherein the M is one selected from the group consisting of Ti, Ga, Y, Zr, La, Ce, Nd, and Hf.

25. The semiconductor device

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Koezuka Junichi
• Jintyou Masami
• Kurosaki Daisuke

Classifications

• H10D30/6704

  having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device · CPC title

• H10D30/6755 Primary

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title

• H10D99/00

  Subject matter not provided for in other groups of this subclass · CPC title

• H10D86/431

  having different compositions, shapes, layouts or thicknesses of gate insulators in different TFTs · CPC title

• H10D86/423

  comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO · CPC title