Semiconductor device and electronic device including the semiconductor device

Patent metadata

Field	Value
Publication number	US-2016240685-A1
Application number	US-201615138539-A
Country	US
Kind code	A1
Filing date	Apr 26, 2016
Priority date	Mar 28, 2012
Publication date	Aug 18, 2016
Grant date	—

Abstract

In a semiconductor device including a transistor, an oxygen release type oxide insulating film is formed in contact with a channel formation region of the transistor. The channel formation region is formed in an oxide semiconductor film. Oxygen is supplied from the oxide insulating film to the oxide semiconductor film. Further, an oxygen barrier film which penetrates the oxide insulating film is formed around the channel formation region, whereby a diffusion of oxygen to the wiring, the electrode, and the like connected to the transistor can be suppressed.

First claim

1 . A semiconductor device comprising:
an oxide insulating film; a transistor comprising an oxide semiconductor film; a wiring electrically connected to the transistor; and a first oxygen barrier film in contact with the wiring, wherein the oxide semiconductor film is over the oxide insulating film, wherein the oxide semiconductor film comprises a channel formation region, wherein the first oxygen barrier film penetrates the oxide insulating film, wherein the first oxygen barrier film comprises aluminum oxide, and wherein the wiring comprises tungsten.

2 . The semiconductor device according to claim 1 , further comprising a transistor including silicon,
wherein the oxide insulating film is over the transistor including silicon.

3 . The semiconductor device according to claim 1 , further comprising a second oxygen barrier film,
wherein the oxide insulating film is over and in contact with the second oxygen barrier film, and wherein the second oxygen barrier film comprises at least one of a metal selected from aluminum, ruthenium, iridium, hafnium, and tantalum; a metal oxide thereof; or a metal nitride thereof.

4 . The semiconductor device according to claim 1 , wherein the oxide semiconductor film includes at least indium or zinc.

5 . An electronic device comprising the semiconductor device according to claim 1 .

6 . The semiconductor device according to claim 1 , wherein the wiring penetrates the oxide insulating film.

7 . A semiconductor device comprising:
an oxide insulating film; a transistor comprising an oxide semiconductor film; a wiring electrically connected to the transistor; and a first oxygen barrier film in contact with the wiring, wherein the oxide semiconductor film is over the oxide insulating film, wherein the oxide semiconductor film comprises a channel formation region, wherein the first oxygen barrier film penetrates the oxide insulating film, wherein the first oxygen barrier film comprises tantalum nitride, and wherein the wiring comprises tungsten.

8 . The semiconductor device according to claim 7 , further comprising a transistor including silicon,
wherein the oxide insulating film is over the transistor including silicon.

9 . The semiconductor device according to claim 7 , further comprising a second oxygen barrier film,
wherein the oxide insulating film is over and in contact with the second oxygen barrier film, and wherein the second oxygen barrier film comprises at least one of a metal selected from aluminum, ruthenium, iridium, hafnium, and tantalum; a metal oxide thereof; or a metal nitride thereof.

10 . The semiconductor device according to claim 7 , wherein the oxide semiconductor film includes at least indium or zinc.

11 . An electronic device comprising the semiconductor device according to claim 7 .

12 . The semiconductor device according to claim 7 , wherein the wiring penetrates the oxide insulating film.

13 . A semiconductor device comprising:
an oxide insulating film; a transistor comprising an oxide semiconductor film; a wiring electrically connected to the transistor; and a first oxygen barrier film in contact with the wiring, wherein the oxide semiconductor film is over the oxide insulating film, wherein the oxide semiconductor film comprises a channel formation region, wherein the first oxygen barrier film penetrates the oxide insulating film, wherein the first oxygen barrier film comprises ruthenium oxide, and wherein the wiring comprises tungsten.

14 . The semiconductor device according to claim 13 , further comprising a transistor including silicon,
wherein the oxide insulating film is over the transistor including silicon.

15 . The semiconductor device according to claim 13 , further comprising a second oxygen barrier film,
wherein the oxide insulating film is over and in contact with the second oxygen barrier film, and wherein the second oxygen barrier film comprises at least one of a metal selected from aluminum, ruthenium, iridium, hafnium, and tantalum; a metal oxide thereof; or a metal nitride thereof.

16 . The semiconductor device according to claim 13 , wherein the oxide semiconductor film includes at least indium or zinc.

17 . An electronic device comprising the semiconductor device according to claim 13 .

18 . The semiconductor device according to claim 13 , wherein the wiring penetrates the oxide insulating film.

Assignees

• Semiconductor Energy Lab

Inventors

• Tanaka Tetsuhiro

Classifications

• H10W20/4441

  the principal metal being a refractory metal · CPC title

• H10D99/00

  Subject matter not provided for in other groups of this subclass · CPC title

• H10D86/441

  Interconnections, e.g. scanning lines · CPC title

• H10D86/423

  comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO · CPC title

• H10D86/60

  wherein the TFTs are in active matrices · CPC title