Semiconductor device

Patent metadata

Field	Value
Publication number	US-9917204-B2
Application number	US-201615044465-A
Country	US
Kind code	B2
Filing date	Feb 16, 2016
Priority date	Mar 31, 2011
Publication date	Mar 13, 2018
Grant date	Mar 13, 2018

Abstract

A semiconductor device of stable electrical characteristics, whose oxygen vacancies in a metal oxide is reduced, is provided. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, a first metal oxide film over the gate insulating film, a source electrode and a drain electrode which are in contact with the first metal oxide film, and a passivation film over the source electrode and the drain electrode. A first insulating film, a second metal oxide film, and a second insulating film are stacked sequentially in the passivation film.

First claim

What is claimed is:

1. A semiconductor device comprising:
a gate electrode;
a gate insulating film;
a first metal oxide film;
a passivation film over the first metal oxide film,
wherein the passivation film comprises a first insulating film, a second metal oxide film, and a second insulating film,
wherein the first metal oxide film comprises all metal elements contained in the second metal oxide film,
wherein the gate insulating film is sandwiched between the gate electrode and the first metal oxide film,
wherein the first metal oxide film is a semiconductor,
wherein the second metal oxide film is sandwiched between the first insulating film and the second insulating film, and
wherein the first insulating film is in contact with the first metal oxide film.

2. The semiconductor device according to claim 1 , further comprising a source electrode and a drain electrode which are in contact with the first metal oxide film;
wherein the first metal oxide film is over the source electrode and the drain electrode, and
wherein the passivation film is over the source electrode and the drain electrode.

3. The semiconductor device according to claim 1 , wherein a thickness of the first insulating film is greater than a thickness of the second insulating film.

4. The semiconductor device according to claim 1 , wherein a thickness of the first metal oxide film is greater than a thickness of the second metal oxide film.

5. The semiconductor device according to claim 1 , wherein a thickness of the second metal oxide film is greater than or equal to 5 nm and less than or equal to 15 nm.

6. The semiconductor device according to claim 1 , wherein all metal elements contained in the first metal oxide film are the same as the all metal elements contained in the second metal oxide film.

7. A semiconductor device comprising:
a gate electrode;
a gate insulating film;
a first metal oxide film;
a passivation film over the first metal oxide film,
wherein the passivation film comprises a first insulating film, a second metal oxide film, and a second insulating film,
wherein the first metal oxide film comprises all metal elements contained in the second metal oxide film,
wherein the gate insulating film is sandwiched between the gate electrode and the first metal oxide film,
wherein each of the first metal oxide film and the second metal oxide film contains at least two kinds of elements selected from In, Ga, Sn, and Zn,
wherein the first metal oxide film is a semiconductor,
wherein the second metal oxide film is sandwiched between the first insulating film and the second insulating film, and
wherein the first insulating film is in contact with the first metal oxide film.

8. The semiconductor device according to claim 7 , further comprising a source electrode and a drain electrode which are in contact with the first metal oxide film;
wherein the first metal oxide film is over the source electrode and the drain electrode, and
wherein the passivation film is over the source electrode and the drain electrode.

9. The semiconductor device according to claim 7 , wherein a thickness of the first insulating film is greater than a thickness of the second insulating film.

10. The semiconductor device according to claim 7 , wherein a thickness of the first metal oxide film is greater than a thickness of the second metal oxide film.

11. The semiconductor device according to claim 7 , wherein a thickness of the second metal oxide film is greater than or equal to 5 nm and less than or equal to 15 nm.

12. The semiconductor device according to claim 7 , wherein all metal elements contained in the first metal oxide film are the same as the all metal elements contained in the second metal oxide film.

13. A semiconductor device comprising:
a gate electrode;
a gate insulating film;
a first metal oxide film;
a first insulating film over the first metal oxide film, and
a second metal oxide film over the first insulating film,
wherein the first metal oxide film comprises all metal elements contained in the second metal oxide film,
wherein the gate insulating film is sandwiched between the gate electrode and the first metal oxide film,
wherein the first metal oxide film is a semiconductor, and
wherein the first insulating film is in contact with the first metal oxide film.

14. The semiconductor device according to claim 13 , further comprising a source electrode and a drain electrode which are in contact with the first metal oxide film;
wherein the first metal oxide film is over the source electrode and the drain electrode, and
wherein the first insulating film is over the source electrode and the drain electrode.

15. The semiconductor device according to claim 13 , wherein a thickness of the first metal oxide film is greater than a thickness of the second metal oxide film.

16. The semiconductor device according to claim 13 , wherein a thickness of the second metal oxide film is greater than or equal to 5 nm and less than or equal to 15 nm.

17. The semiconductor device according to claim 13 , wherein all metal elements contained in the first metal oxide film are the same as the all metal elements contained in the second metal oxide film.

18. The semiconductor device according to claim 1 , wherein the second metal oxide film is an insulator.

19. The semiconductor device according to claim 7 , wherein the second metal oxide film is an insulator.

20. The semiconductor device according to claim 13 , wherein the second metal oxide film is an insulator.

21. A semiconductor device comprising:
a gate electrode;
a gate insulating film;
a first metal oxide film;
a first insulating film over the first metal oxide film, and
a second metal oxide film over the first insulating film,
wherein the first metal oxide film comprises In and Zn, and the second metal oxide film comprises In and Zn,
wherein the gate insulating film is sandwiched between the gate electrode and the first metal oxide film,
wherein the first metal oxide film is a semiconductor, and
wherein the first insulating film is in contact with the first metal oxide film.

22. The semiconductor device according to claim 21 , further comprising a source electrode and a drain electrode which are in contact with the first metal oxide film;
wherein the first metal oxide film is over the source electrode and the drain electrode, and
wherein the first insulating film is over the source electrode and the drain electrode.

23. The semiconductor device according to claim 21 , wherein all metal elements contained in the first metal oxide film are the same as all metal elements contained in the second metal oxide film.

24. The semiconductor device according to claim 21 , wherein the second metal oxide film is an insulator.

Assignees

• Semiconductor Energy Lab

Inventors

• Nakano Tadashi
• Sugikawa Mai
• Noda Kosei

Classifications

• H10D30/6757

  characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715) · CPC title

• H10D62/875

  being semiconductor metal oxide, e.g. InGaZnO (Group II-VI materials H10D62/86; Group I-VI materials H10D62/871; Pb compounds or alloys H10D62/874) · CPC title

• H01L29/42384

  Electricity · mapped topic

• H01L29/42364

  Electricity · mapped topic

• H01L29/78606

  Electricity · mapped topic