Manufacturing method of semiconductor device

Patent metadata

Field	Value
Publication number	US-8945982-B2
Application number	US-201113091190-A
Country	US
Kind code	B2
Filing date	Apr 21, 2011
Priority date	Apr 23, 2010
Publication date	Feb 3, 2015
Grant date	Feb 3, 2015

Abstract

Disclosed is a semiconductor device using an oxide semiconductor, with stable electric characteristics and high reliability. In a process for manufacturing a bottom-gate transistor including an oxide semiconductor film, dehydration or dehydrogenation is performed by heat treatment and oxygen doping treatment is performed. The transistor including a gate insulating film subjected to the oxygen doping treatment and the oxide semiconductor film subjected to the dehydration or dehydrogenation by the heat treatment is a transistor having high reliability in which the amount of change in threshold voltage of the transistor by the bias-temperature stress (BT) test can be reduced.

First claim

What is claimed is:

1. A method for manufacturing a semiconductor device, comprising the steps of:
forming a gate electrode layer;
forming a gate insulating film over the gate electrode layer, wherein the gate insulating film contains an oxygen atom at a ratio greater than a stoichiometric proportion and less than four times as high as the stoichiometric proportion;
performing a first heat treatment on the gate insulating film so as to remove water or hydroxide from the gate i…

Assignees

• Yamazaki Shunpei
• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei

Classifications

• H10P14/3434

  Electricity · mapped topic

• H10P14/24

  Electricity · mapped topic

• H10P14/22

  Electricity · mapped topic

• H10D30/6755 Primary

  Electricity · mapped topic

• H10D30/6704

  Electricity · mapped topic