Semiconductor device and electronic device including the semiconductor device

Patent metadata

Field	Value
Publication number	US-9349849-B2
Application number	US-201313833342-A
Country	US
Kind code	B2
Filing date	Mar 15, 2013
Priority date	Mar 28, 2012
Publication date	May 24, 2016
Grant date	May 24, 2016

Abstract

In a semiconductor device including a transistor, an oxygen release type oxide insulating film is formed in contact with a channel formation region of the transistor. The channel formation region is formed in an oxide semiconductor film. Oxygen is supplied from the oxide insulating film to the oxide semiconductor film. Further, an oxygen bather film which penetrates the oxide insulating film is formed around the channel formation region, whereby a diffusion of oxygen to the wiring, the electrode, and the like connected to the transistor can be suppressed.

First claim

What is claimed is:

1. A semiconductor device comprising:
an oxide insulating film;
a transistor comprising an oxide semiconductor film, a source electrode and a drain electrode in contact with the oxide semiconductor film, a gate insulating film over the oxide semiconductor film and a gate electrode over the gate insulating film; and
a first oxygen barrier film penetrating the oxide insulating film,
wherein the oxide semiconductor film is over and in contact with the oxide insulating film,
wherein the oxide semiconductor film comprises a channel formation region,
wherein the first oxygen barrier film surrounds a region of the oxide insulating film, and
wherein the channel formation region overlaps with the region of the oxide insulating film.

2. The semiconductor device according to claim 1 , further comprising a transistor including silicon,
wherein the oxide insulating film is over the transistor including silicon.

3. The semiconductor device according to claim 1 , further comprising a second oxygen barrier film,
wherein the oxide insulating film is over and in contact with the second oxygen barrier film, and
wherein the second oxygen barrier film comprises at least one of a metal selected from aluminum, ruthenium, iridium, hafnium, and tantalum; a metal oxide thereof; or a metal nitride thereof.

4. The semiconductor device according to claim 1 , wherein the first oxygen barrier film comprises at least one of a metal selected from aluminum, ruthenium, iridium, hafnium, and tantalum; a metal oxide thereof; or a metal nitride thereof.

5. The semiconductor device according to claim 1 , wherein the oxide semiconductor film includes at least indium or zinc.

6. An electronic device comprising the semiconductor device according to claim 1 .

7. A semiconductor device comprising:
an oxide insulating film;
a transistor comprising an oxide semiconductor film, a source electrode and a drain electrode in contact with the oxide semiconductor film, a gate insulating film over the oxide semiconductor film, and a gate electrode over the gate insulating film; and
a pair of first oxygen barrier films penetrating the oxide insulating film,
wherein one of the pair of first oxygen barrier films is in contact with the source electrode and the other of the pair of first oxygen barrier films is in contact with the drain electrode,
wherein the oxide semiconductor film is over and in contact with the oxide insulating film,
wherein the oxide semiconductor film comprises a channel formation region,
wherein a region of the oxide insulating film is sandwiched between the pair of first oxygen barrier films, and
wherein the channel formation region overlaps with the region of the oxide insulating film.

8. The semiconductor device according to claim 7 , further comprising a transistor including silicon,
wherein the oxide insulating film is over the transistor including silicon,
wherein the pair of first oxygen barrier films comprises a conductive material, and
wherein one of the pair of first oxygen barrier films is in contact with the gate electrode of the transistor including silicon.

9. The semiconductor device according to claim 7 , further comprising a second oxygen barrier film,
wherein the oxide insulating film is over and in contact with the second oxygen barrier film, and
wherein the second oxygen barrier film comprises at least one of a metal selected from aluminum, ruthenium, iridium, hafnium, and tantalum; a metal oxide thereof; or a metal nitride thereof.

10. The semiconductor device according to claim 7 , wherein the pair of first oxygen barrier films comprises at least one of a metal selected from aluminum, ruthenium, iridium, hafnium, and tantalum; a metal oxide thereof; or a metal nitride thereof.

11. The semiconductor device according to claim 7 , wherein the oxide semiconductor film includes at least indium or zinc.

12. An electronic device comprising the semiconductor device according to claim 7 .

13. A semiconductor device comprising:
a first transistor comprising a first channel formation region, a first gate insulating layer over the first channel formation region and a first gate electrode over the first gate insulating layer;
an insulating film over the first transistor;
an oxide insulating film over the insulating film;
a second transistor comprising an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a source electrode and a drain electrode in contact with the oxide semiconductor film, and a gate electrode over the gate insulating film;
a first oxygen barrier film penetrating the oxide insulating film; and
a second oxygen barrier film penetrating the oxide insulating film;
wherein the oxide semiconductor film is over and in contact with the oxide insulating film,
wherein the first oxygen barrier film is in contact with the source electrode and the second oxygen barrier film is in contact with the drain electrode,
wherein the first gate electrode is electrically connected to the source electrode of the second transistor,
wherein a region of the oxide insulating film is sandwiched between the first oxygen barrier film and the second oxygen barrier film, and
wherein a second channel formation region in the oxide semiconductor film of the second transistor overlaps with the region of the oxide insulating film.

14. The semiconductor device according to claim 13 , further comprising a third oxygen barrier film between the insulating film and the oxide insulating film, and
wherein the third oxygen barrier film comprises at least one of a metal selected from aluminum, ruthenium, iridium, hafnium, and tantalum; a metal oxide thereof; or a metal nitride thereof.

15. The semiconductor device according to claim 13 , wherein the first channel formation region is formed in a semiconductor material including silicon.

16. The semiconductor device according to claim 13 , wherein each of the first oxygen barrier film and the second oxygen barrier film comprises at least one of a metal selected from aluminum, ruthenium, iridium, hafnium, and tantalum; a metal oxide thereof; or a metal nitride thereof.

17. The semiconductor device according to claim 13 , wherein the oxide semiconductor film includes at least indium or zinc.

18. An electronic device comprising the semiconductor device according to claim 13 .

19. The semiconductor device according to claim 7 , further comprising a second oxygen barrier film sandwiched between the oxide insulating film and one of the source electrode and the drain electrode.

20. The semiconductor device according to claim 13 ,
wherein the first oxygen barrier film is provided in an opening of the oxide insulating film, and
wherein the first oxygen barrier film is between an inner wall of the opening of the oxide insulating film and the source electrode.

Assignees

• Semiconductor Energy Lab

Inventors

• Tanaka Tetsuhiro

Classifications

• H10W20/4441

  the principal metal being a refractory metal · CPC title

• H10D99/00

  Subject matter not provided for in other groups of this subclass · CPC title

• H10D86/441

  Interconnections, e.g. scanning lines · CPC title

• H10D86/423

  comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO · CPC title

• H10D86/60

  wherein the TFTs are in active matrices · CPC title