Apparatus and techniques for decelerated ion beam with no energy contamination

Patent metadata

Field	Value
Publication number	US-10692697-B2
Application number	US-201816155469-A
Country	US
Kind code	B2
Filing date	Oct 9, 2018
Priority date	Mar 20, 2017
Publication date	Jun 23, 2020
Grant date	Jun 23, 2020

Abstract

An ion implantation system may include an ion source to generate an ion beam, a substrate stage disposed downstream of the ion source; and a deceleration stage including a component to deflect the ion beam, where the deceleration stage is disposed between the ion source and substrate stage. The ion implantation system may further include a hydrogen source to provide hydrogen gas to the deceleration stage, wherein energetic neutrals generated from the ion beam are not scattered to the substrate stage.

First claim

What is claimed is:

1. An ion implantation system, comprising:
an ion source to generate an ion beam;
a substrate stage disposed downstream of the ion source;
a deceleration stage including a component to deflect the ion beam, the deceleration stage disposed between the ion source and substrate stage; and
a gas source, the gas source coupled directly to the deceleration stage to provide hydrogen gas or helium gas to the deceleration stage,
wherein energetic neutrals generated from the ion beam are not scattered to the substrate stage.

2. The ion implantation system of claim 1 , wherein the deceleration stage comprises a curved shape, wherein the deceleration stage does not provide a line of sight path for the ion beam from an entrance to an exit of the deceleration stage.

3. The ion implantation system of claim 1 , comprising a port to transport the hydrogen gas or the helium gas directly into the deceleration stage.

4. The ion implantation of claim 1 , the deceleration stage comprising a partial pressure of hydrogen or helium of at least 5×10 −6 Torr.

5. The ion implantation system of claim 1 , the gas source comprising a plurality of ports to provide hydrogen gas or helium gas to the ion beam, wherein at least one port of the plurality of ports is disposed in the deceleration stage.

6. The ion implantation system of claim 1 , the gas source comprising a local hydrogen generator.

7. The ion implantation system of claim 6 , the gas source comprising an electrolytic hydrogen generator.

8. The ion implantation system of claim 1 , wherein the ion beam comprises boron ions having an ion energy of 50 keV or less.

9. A method of ion implantation, comprising:
generating an ion beam;
decelerating the ion beam in a deceleration stage;
altering a trajectory of the ion beam during the decelerating; and
directing hydrogen gas or helium gas from a gas source directly into the deceleration stage during the decelerating.

10. The method of claim 9 , wherein the hydrogen gas or helium gas is directed through a port in the deceleration stage.

11. The method of claim 9 , wherein a gas pressure in the deceleration stage is at least 5×10 −6 Torr.

12. The method of claim 9 , comprising generating the hydrogen gas using a local hydrogen generator.

13. The method of claim 12 , the local hydrogen generator comprising an electrolytic hydrogen generator.

14. An ion implantation system, comprising:
a beamline, the beamline comprising:
an ion source to generate an ion beam, the ion beam comprising an implant species;
a substrate stage disposed downstream of the ion source;
a deceleration stage, the deceleration stage disposed between the ion source and substrate stage; and

a gas source, the gas source coupled directly to the deceleration stage to provide hydrogen gas to the beamline at a designed partial pressure,
wherein the implant species is scattered at an angle of no more than 5 degrees during collisions with the hydrogen gas.

15. The ion implantation system of claim 14 , comprising a port to transport the hydrogen gas directly into the deceleration stage.

16. A method of ion implantation, comprising:
generating an ion beam, the ion beam comprising an implant species;
conducting the ion beam along a beamline using a plurality of beamline components;
decelerating the ion beam in a deceleration stage; and
directing hydrogen gas directly to the deceleration stage at a designed partial pressure,

wherein the implant species is scattered at an angle of no more than 5 degrees during collisions with the hydrogen gas.

Assignees

• Varian Semiconductor Equipment Ass Inc

Inventors

• Sinclair Frank
• Tieger Daniel
• Becker Klaus

Classifications

• H01J37/3171 Primary

  for ion implantation · CPC title

• H01J37/3002

  Details · CPC title

• H01J37/3007

  Electron or ion-optical systems · CPC title

• H01J2237/0042

  Deflection of neutralising particles · CPC title

• H01J2237/04756

  with electrostatic means · CPC title