Selective deposition utilizing masks and directional plasma treatment

Patent metadata

Field	Value
Publication number	US-2016233100-A1
Application number	US-201514680879-A
Country	US
Kind code	A1
Filing date	Apr 7, 2015
Priority date	Feb 7, 2015
Publication date	Aug 11, 2016
Grant date	—

Abstract

Methods for selectively depositing different materials at diffe ent locations on a substrate are provided. A selective deposition process may form different materials on different surfaces, e.g., different portions of the substrate, depending on the material properties of the underlying layer being deposited on on implantation processes may be used to modify materials disposed on the substrate. The ions modify surface properties of the substrate to enable the subsequent selective deposition process. A substrate having a mask disposed thereon may be subjected to an on implantation process to modify the mask and surfaces of the substrate exposed by the mask. The mask may be removed which results in a substrate having regions of implanted and non-implanted materials. A subsequent deposition process may be performed to selectively deposit on either the implanted or non-implanted regions of the substrate.

First claim

1 . A selective deposition method, comprising:
depositing a mask material on a substrate; patterning the mask material to form a patterned mask, wherein regions of the substrate are exposed after the patterning; implanting ions into the patterned mask and the exposed regions of the substrate, wherein the exposed regions are implanted regions; removing the patterned mask; and depositing a material on the substrate, wherein the material is selectively deposited and grown from non-implanted regions of the substrate in response to surface modification of the exposed regions.

2 . The method of claim 1 ,
wherein the patterned mask is removed prior to the selectively depositing the material on the substrate.

3 . (canceled)

4 . (canceled)

5 . The method of claim 1 , wherein the mask material is a hardmask material.

6 . The method of claim 1 , wherein the mask material is a photoresist material.

7 . The method of claim 6 , wherein the photoresist is patterned using a 193 nm photolithography process.

8 . The method of claim 1 , wherein implanting ions comprises:
implanting a dosage of ions configured to cause a desired nucleation delay when selectively depositing the material on the non-implanted regions of the substrate.

9 . The method of claim 1 , wherein selectively depositing the material comprises:
depositing a material selected from the group consisting of W, Pt, Cu, Ru, RuO 2 , Co, Al, Al 2 O 3 , HfO 2 , Au, Ag, and combinations thereof.

10 . A selective deposition method, comprising:
depositing a mask material on a substrate; patterning the mask material to form a patterned mask, wherein regions of the substrate are exposed though the patterned mask after the patterning; implanting ions into the patterned mask and the exposed regions of the substrate; removing the patterned mask from the substrate to expose non-implanted regions of the substrate; and selectively depositing a material grown from the non-implanted regions of the substrate.

11 . The method of claim 10 , wherein the mask material is a photoresist material.

12 . The method of claim 11 , wherein implanting ions further comprises:
implanting fluorine ions at a dosage of of less than about 5E 16 (ions/cm 2 ).

13 . The method of claim 10 , wherein removing the patterned mask comprises:
performing a wet etching process or a plasma ashing process, the processes configured to prevent modification of the implanted regions of the substrate.

14 . The method of claim 10 , wherein selectively depositing the material comprises:
performing an ALD process.

15 . The method of claim 14 , wherein selectively depositing the material comprises:
depositing a material selected from the group consisting of W, Pt, Cu, Ru, RuO 2 , Co, Al, Al 2 O 3 , HfO 2 , Au, Ag, and combinations thereof.

16 . The method of claim 15 , wherein implanting ions further comprises:
implanting an ion species at a dosage selected to generate a nucleation delay on an implanted region when the ALD process is performed.

17 . The method of claim 16 , wherein performing an ALD process comprises:
maintaining the substrate at a temperature less than about 500° Celsius.

18 . A selective deposition method, comprising:
implanting fluorine ions into a patterned mask and a first region of a substrate exposed through the patterned mask, the fluorine ions implanted at ion dosage less than about 5E 16 (ions/cm 2 ); removing the patterned mask from the substrate to expose a second region of the substrate, the second region shielded from fluorine ions during implanting of the fluorine ions in the first region; and depositing a material using an ALD process while maintaining the substrate at a temperature of less than about 500° Celsius, the ALD process selectively depositing the material which is grown from the second region and not the first region.

19 . (canceled)

20 . (canceled)

Assignees

• Applied Materials Inc

Inventors

• Godet Ludovic
• Fan Yin
• Yieh Ellie Y
• Nemani Srinivas D

Classifications

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P76/2041

  Photolithographic processes · CPC title

• H10P50/287

  by chemical means · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P32/1204

  from a plasma phase · CPC title