Method and apparatus for selective deposition

Patent metadata

Field	Value
Publication number	US-9385219-B2
Application number	US-201514754042-A
Country	US
Kind code	B2
Filing date	Jun 29, 2015
Priority date	Jul 3, 2014
Publication date	Jul 5, 2016
Grant date	Jul 5, 2016

Abstract

Methods for forming fin structures with desired materials formed on different locations of the fin structure using a selective deposition process for fin field effect transistors (FinFETs) are provided. In one embodiment, a method of forming a structure with desired materials on a substrate includes depositing a first material on a substrate having a three-dimensional (3D) structure formed thereon while performing an implantation process to dope a first region of the 3D structure. The first material may be removed and a second material may be deposited on the 3D structure. The second material may selectively grow on a second region of the 3D structure.

First claim

The invention claimed is:

1. A method of forming a structure on a substrate, comprising:
performing an implantation process to dope a first region of a 3D structure formed on a substrate while depositing a first material on the 3D structure;
removing the first material; and
depositing a second material on the 3D structure, wherein the second material selectively grows on a second region of the 3D structure.

2. The method of claim 1 , wherein the first region and the second region are the same.

3. The method of claim 1 , wherein performing the implantation on the first region comprises:
doping the first material with ions at a selected ion incident angle.

4. The method of claim 1 , wherein performing the implantation process to dope the first region comprises:
performing a directional plasma process on the substrate.

5. The method of claim 4 , wherein the directional plasma process further comprises:
doping ions predominantly into a first sidewall of the 3D structure and a top portion of the 3D structure to form the doped first region; and
depositing the first material non-uniformly on treated and untreated regions of the substrate.

6. The method of claim 5 , wherein doping ions further comprises:
preventing implantation of ions in a second sidewall and a bottom portion of the 3D structure underneath the first material.

7. The method of claim 5 , wherein removing the first material further comprises:
performing a wet cleaning process to expose the treated and untreated regions of the substrate.

8. The method of claim 1 , wherein the second material is deposited on the structure using at least one of atomic layer deposition, physical vapor deposition, and chemical vapor deposition.

9. The method of claim 8 , wherein depositing the second material on the 3D structure further comprises:
pulsing one or more reactant gases to selectively deposit the second material on the 3D structure.

10. The method of claim 1 , wherein the substrate comprises a single material.

11. The method of claim 1 , wherein the structure is a fin structure of a fin field effect transistor.

12. A method of forming a fin structure on a substrate, comprising:
performing a directional plasma process to form a treated layer on an implanted region of a substrate and a non-treated layer on a non-implanted region of the substrate; and
selectively depositing a material layer predominantly on the implanted region of the substrate.

13. The method of claim 12 , further comprising:
performing a cleaning process to remove the treated layer and expose the implanted region and non-implanted region of the substrate.

14. The method of claim 12 , wherein selectively depositing the material layer comprises:
performing an atomic layer deposition process to form the material layer predominantly on the implanted region of the substrate.

15. The method of claim 12 , wherein performing the directional plasma process further comprises:
depositing a first deposition material on the first and second regions of the substrate; and
performing the directional plasma process to predominantly implant ions into the first region of the substrate.

16. The method of claim 15 , wherein the first region includes a first sidewall of the substrate, and further comprising:
doping the first sidewall of the substrate with ions at an ion incident angle of between about 0 degrees and 60 degrees.

17. The method of claim 12 , wherein the structure is a fin structure of a fin field effect transistor.

18. A method of forming a fin structure on a substrate, comprising:
performing a directional plasma process to form a treated layer on an implanted region of a substrate and a non-treated layer on a non-implanted region of the substrate; and
selectively depositing a material layer predominantly on the non-implanted region of the substrate.

19. The method of claim 18 , further comprising:
performing a cleaning process to expose the implanted region of the substrate.

20. The method of claim 18 , wherein selectively depositing the material layer comprises:
performing an atomic layer deposition process to form the material layer predominantly on the non-implanted region of the substrate.

Assignees

• Applied Materials Inc

Inventors

• Yieh Ellie Y
• Nemani Srinivas D
• Godet Ludovic
• Fan Yin
• Ma Tristan

Classifications

• H10P14/6528

  In-situ cleaning after layer formation, e.g. removing process residues · CPC title

• H10P14/6514

  by exposure to a plasma · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/65

  characterised by treatments performed before or after the formation of the materials · CPC title

• H10P70/20

  Cleaning during device manufacture · CPC title