Sensor package and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-10672676-B2
Application number	US-201815988940-A
Country	US
Kind code	B2
Filing date	May 24, 2018
Priority date	Jun 4, 2015
Publication date	Jun 2, 2020
Grant date	Jun 2, 2020

Abstract

A fingerprint sensor device and a method of making a fingerprint sensor device. As non-limiting examples, various aspects of this disclosure provide various fingerprint sensor devices, and methods of manufacturing thereof, that comprise an interconnection structure, for example a bond wire, at least a portion of which extends into a dielectric layer utilized to mount a plate, and/or that comprise an interconnection structure that extends upward from the semiconductor die at a location that is laterally offset from the plate.

First claim

What is claimed is:

1. A sensor device comprising:
a substrate having a top substrate side, a bottom substrate side, and lateral substrate sides between the top and bottom substrate sides, the substrate comprising a conductive layer on the top substrate side;
a semiconductor die having a top die side, a bottom die side coupled to the top substrate side, and lateral die sides between the top and bottom die sides, the semiconductor die comprising a sensing area on the top die side and a conductive pad on the top die side;
a conductive interconnection structure electrically connecting the conductive pad of the semiconductor die to the conductive layer of the substrate;
a dielectric layer (DL) having a top DL side, a bottom DL side coupled to the top die side, and lateral DL sides between the top and bottom DL sides; and
a plate positioned over the sensing area of the semiconductor die, the plate having a top plate side, a bottom plate side coupled to the top DL side, and lateral plate sides between the top and bottom plate sides, wherein the center of the plate is laterally offset from the center of the sensing area of the semiconductor die.

2. The sensor device of claim 1 , wherein the dielectric layer comprises an adhesive layer that adheres the bottom plate side to the top die side.

3. The sensor device of claim 1 , wherein the dielectric layer is transparent.

4. The sensor device of claim 1 , wherein the dielectric layer completely covers the sensing area of the semiconductor die.

5. The sensor device of claim 1 , wherein the dielectric layer covers a smaller area than the semiconductor die.

6. The sensor device of claim 1 , wherein the dielectric layer comprises an aperture.

7. The sensor device of claim 1 , wherein the sensing area of the semiconductor die is centered on the top die side.

8. The sensor device of claim 1 , wherein the bottom DL side contacts the top die side.

9. The sensor device of claim 1 , wherein the sensing area of the semiconductor die comprises sensing elements that sense fingerprint characteristics.

10. A sensor device comprising:
a substrate having a top substrate side, a bottom substrate side, and lateral substrate sides between the top and bottom substrate sides, the substrate comprising a conductive layer on the top substrate side;
a semiconductor die having a top die side, a bottom die side coupled to the top substrate side, and lateral die sides between the top and bottom die sides, the semiconductor die comprising a sensing area on the top die side and a conductive pad on the top die side;
a conductive interconnection structure electrically connecting the conductive pad of the semiconductor die to the conductive layer of the substrate;
a plate positioned over the sensing area of the semiconductor die, the plate having a top plate side, a bottom plate side, and lateral plate sides between the top and bottom plate sides, wherein the center of the plate is laterally offset from the center of the sensing area of the semiconductor die; and
an encapsulating material covering at least the top substrate side, the lateral die sides, and the conductive interconnection structure.

11. The sensor device of claim 10 , wherein the conductive interconnection structure comprises a bond wire, and the encapsulating material contacts and surrounds the entire bond wire.

12. The sensor device of claim 10 , wherein the encapsulating material covers the lateral plate sides.

13. The sensor device of claim 12 , wherein the encapsulating material contacts the lateral die sides and the lateral plate sides.

14. The sensor device of claim 10 , wherein the encapsulating material comprises a top surface that is higher than the top plate side, and the encapsulating material comprises an aperture that exposes at least a portion of the top plate side from the encapsulating material.

15. The sensor device of claim 14 , wherein the encapsulating material covers a peripheral portion of the top plate side.

16. The sensor device of claim 10 , comprising an adhesive layer that couples the bottom die side to the top substrate side, and wherein the encapsulating material laterally surrounds the adhesive layer, the semiconductor die, and the plate.

17. A method of manufacturing a sensor device, the method comprising:
receiving a structure comprising:
a substrate having a top substrate side, a bottom substrate side, and lateral substrate sides between the top and bottom substrate sides, the substrate comprising a conductive layer on the top substrate side;
a semiconductor die having a top die side, a bottom die side coupled to the top substrate side, and lateral die sides between the top and bottom die sides, the semiconductor die comprising a sensing area on the top die side and a conductive pad on the top die side; and
a conductive interconnection structure electrically connecting the conductive pad of the semiconductor die to the conductive layer of the substrate;

forming a dielectric layer (DL) having a top DL side, a bottom DL side coupled to the top die side, and lateral DL sides between the top and bottom DL sides; and
mounting a plate positioned over the sensing area of the semiconductor die, the plate having a top plate side, a bottom plate side coupled to the top DL side, and lateral plate sides between the top and bottom plate sides, wherein the center of the mounted plate is laterally offset from the center of the sensing area of the semiconductor die.

18. The method of claim 17 , comprising forming an encapsulating material covering at least the top substrate side, the lateral die sides, lateral sides of the dielectric layer, and the conductive interconnection structure.

19. The method of claim 17 , wherein the bottom DL side contacts the top die side.

20. The method of claim 17 , wherein the encapsulating material comprises a top surface that is higher than the top plate side, and the encapsulating material comprises an aperture that exposes at least a portion of the top plate side from the encapsulating material.

Assignees

• Amkor Technology Inc

Inventors

• Chung Ji Young
• Park Dong Joo
• Kim Jin Seong
• Park Jae Sung
• Hong Se Hwan

Classifications

• H01L2224/32225

  Electricity · mapped topic

• H01L2224/33181

  Electricity · mapped topic

• H01L24/29

  Electricity · mapped topic

• H01L2224/73215

  Electricity · mapped topic

• H01L24/73

  Electricity · mapped topic