Selective deposition defects removal by chemical etch

Patent metadata

Field	Value
Publication number	US-10643840-B2
Application number	US-201816129223-A
Country	US
Kind code	B2
Filing date	Sep 12, 2018
Priority date	Sep 12, 2017
Publication date	May 5, 2020
Grant date	May 5, 2020

Abstract

Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing a substrate to a blocking molecule to selectively deposit a blocking layer on the first surface. A layer is selectively formed on the second surface and defects of the layer are formed on the blocking layer. The defects are removed from the blocking layer on the first surface.

First claim

What is claimed is:

1. A method of selective deposition comprising:
providing a substrate with a first material with a first surface and a second material with a second surface;
exposing the substrate to a blocking compound comprising at least one blocking molecule to selectively deposit a blocking layer on the first surface relative to the second surface;
forming a layer selectively on the second surface relative to the first surface and creating defects comprising the layer on the first surface; and
removing the defects from the blocking layer on the first surface.

2. The method of claim 1 , wherein removing the defects from the first surface comprises exposing the substrate to a metal-halogen precursor for a predetermined amount of time.

3. The method of claim 2 , wherein the metal-halogen precursor comprises one or more of WCl x , HfCl x , NbCl x or RuCl x , where x is 1 to 6.

4. The method of claim 2 , wherein the metal-halogen precursor comprises a metal oxyhalide.

5. The method of claim 2 , wherein the metal-halogen precursor comprises substantially no fluorine atoms.

6. The method of claim 2 , wherein removing the defects comprises a thermal process.

7. The method of claim 1 , wherein the first material comprises a metal oxide or a dielectric material and the second material comprises a metal or silicon.

8. The method of claim 6 , wherein the first material consists essentially of silicon oxide.

9. The method of claim 1 , wherein the second material comprises a metal oxide or a dielectric material and the first material comprises a metal or silicon.

10. The method of claim 8 , wherein the second surface consists essentially of silicon oxide.

11. The method of claim 1 , wherein the layer comprises a metal oxide.

12. The method of claim 11 , wherein the metal oxide is an etch stop layer or a mask layer.

13. The method of claim 1 , wherein the blocking molecule comprises more than one reactive moiety.

14. The method of claim 13 , wherein the reactive moieties are positioned in a linear fashion.

15. The method of claim 13 , wherein the reactive moieties are positioned in a branched fashion.

16. The method of claim 1 , wherein the blocking compound comprises at least two different blocking molecules.

17. A method of selective deposition comprising:
providing a substrate with a first material comprising a dielectric with a first surface and a second material comprising a conductor with a second surface;
exposing the substrate to a blocking compound comprising at least one blocking molecule to selectively deposit a blocking layer on the first surface relative to the second surface;
forming a layer selectively on the second surface relative to the first surface and forming defects of the layer on the blocking layer; and
exposing the substrate to a defect removal process for a predetermined amount of time to remove the defects from the blocking layer, the defect removal process comprising a metal-halogen precursor.

18. The method of claim 17 , wherein the metal-halogen precursor comprises one or more of WCl x , HfCl x , NbCl x or RuCl x , where x is 1 to 6, or a metal oxyhalide.

19. The method of claim 2 , wherein removing the defects comprises a thermal process.

20. A method of selective deposition comprising:
providing a substrate with a first material comprising a dielectric and a second material comprising a conductor;
exposing the substrate to a blocking compound comprising at least one blocking molecule to selectively deposit a blocking layer on the dielectric relative to the conductor;
forming a layer selectively on the conductor relative to the dielectric, where forming the layer causes defects to grow on the blocking layer; and
exposing the substrate to a defect removal process for a predetermined amount of time to remove the defects from the blocking layer, the defect removal process comprising exposure to a metal-halogen precursor comprising one or more of WCl x , HfCl x , NbCl x or RuCl x , where x is 1 to 6, or a metal oxyhalide in a thermal process.

Assignees

• Applied Materials Inc

Inventors

• Anthis Jeffrey W
• Ke Chang
• Jain Pratham
• Schmiege Benjamin
• Jian Guoqiang
• Jackson Michael S
• Zhou Lei
• Ma Paul F
• Wu Liqi

Classifications

• H10P72/0616

  Monitoring of warpages, curvatures, damages, defects or the like · CPC title

• H10P14/61

  using masks · CPC title

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P50/283 Primary

  by chemical means · CPC title