Loadlock integrated bevel etcher system

Patent metadata

Field	Value
Publication number	US-10636684-B2
Application number	US-201916540304-A
Country	US
Kind code	B2
Filing date	Aug 14, 2019
Priority date	Sep 24, 2015
Publication date	Apr 28, 2020
Grant date	Apr 28, 2020

Abstract

Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.

First claim

What is claimed is:

1. A chamber, comprising:
a substrate support having a substrate support surface positioned in a processing region;
a masking assembly coupled to a gas source, the masking assembly comprising:
a masking plate;
an extension connected with the masking plate;
a baffle connected with the extension, the baffle including a standoff portion positioned to contact the substrate support, and wherein, when the substrate support is disposed against the standoff portion, a uniform gap defined by parallel surfaces is formed between a portion of the mask assembly and the peripheral region of the substrate support;
a movement control device in connection with the baffle, the movement control device positioned to move the baffle and the mask simultaneously; and
a gas channel formed in the masking plate, the gas channel and the masking plate being positioned to deliver a gas flow over the substrate support surface, the gas flowing radially outward from a central region of the substrate support surface toward the peripheral region of the substrate support surface; and

a remote plasma source positioned to supply an etching agent to a peripheral region of the substrate support surface, the remote plasma source configured to produce an activated gas and deliver the activated gas to the processing region through the baffle.

2. The chamber of claim 1 , wherein the masking plate comprises a central port formed therein.

3. The chamber of claim 1 , wherein the masking assembly further comprises an angled ledge extending from the masking plate.

4. The chamber of claim 3 , wherein the angled ledge forms an angle of between 15 and 45 degrees as measured from a surface of the masking plate.

5. The chamber of claim 1 , wherein the masking plate comprises a plurality of ports formed therein.

6. The chamber of claim 1 , wherein the standoff portion extends from a periphery of the baffle.

7. The chamber of claim 1 , further comprising a chuck ring positioned to receive the standoff portion.

8. A chamber, comprising:
a substrate support having a substrate support surface positioned in a processing region;
a remote plasma source configured to supply an etching agent to a peripheral region of the substrate support surface; and
a masking assembly coupled to a gas source, the masking assembly comprising:
a masking plate;
a mask shaft connected with the masking plate;
a baffle connected with the mask shaft, the baffle including a standoff portion positioned to contact the substrate support, and wherein, when the substrate support is disposed against the standoff portion, a uniform gap defined by parallel surfaces is formed between a portion of the mask assembly and the peripheral region of the substrate support;
a multidirectional movement device in connection with the mask shaft, the multidirectional movement device being able to adjust the position of mask by moving the mask shaft; and
a gas channel formed in the masking plate, the gas channel and the masking plate positioned to deliver a gas flow over the substrate support surface, the gas flowing from an approximately central region of the substrate support surface toward the peripheral region of the substrate support surface.

9. The chamber of claim 8 , wherein the masking assembly further comprises an angled ledge extending from the masking plate.

10. The chamber of claim 9 , wherein the angled ledge forms an angle of between 15 and 45 degrees as measured from a surface of the masking plate.

11. The chamber of claim 8 , wherein the standoff portion extends from a periphery of the baffle.

12. A chamber, comprising:
a substrate support having a substrate support surface positioned in a processing region;
a remote plasma source positioned and operable to supply an etching agent through a baffle to a peripheral region of the substrate support surface, wherein the baffle includes a standoff portion positioned to contact the substrate support;
a masking assembly coupled to a gas source, wherein the masking assembly is positioned to deliver a gas flow over the substrate support surface, and wherein, when the substrate support is disposed against the standoff portion, and uniform gap defined by parallel surfaces is formed between a portion of the mask assembly and the peripheral region of the substrate support; and
a movement control device operable to move the masking assembly.

13. The chamber of claim 12 , wherein the masking assembly comprises a masking plate with a central port formed therein.

14. The chamber of claim 13 , wherein the masking assembly further comprises an angled ledge extending from the masking plate.

15. The chamber of claim 14 , wherein the angled ledge forms an angle of between 15 and 45 degrees as measured from a surface of the masking plate.

16. The chamber of claim 12 , wherein the masking plate comprises a plurality of ports formed therein.

17. The chamber of claim 12 , wherein species from the etching agent are delivered to the processing region through a plurality of slits through a lower portion of the baffle.

18. The chamber of claim 12 , wherein the standoff portion extends from a periphery of the baffle.

19. The chamber of claim 18 , further comprising a chuck ring in contact with the substrate support and positioned to receive the standoff portion.

20. The chamber of claim 12 , wherein the masking assembly is coupled to a center portion of the baffle.

Assignees

• Applied Materials Inc

Inventors

• Basu Saptarshi
• Lee Jeongmin
• Connors Paul
• Du Bois Dale R
• Kulshreshtha Prashant Kumar
• Narasimha Karthik Thimmavajjula
• Berens Brett
• Ghosh Kalyanjit
• Zhou Jianhua
• Balasubramanian Ganesh
• Lee Kwangduk Douglas
• Rocha-Alvarez Juan Carlos
• Ogiso Hiroyuki
• Krivulina Liliya
• Gilbert Rick
• Waqar Mohsin
• Shankaramurthy Venkatanarayana
• Ponnekanti Hari K

Classifications

• H10P72/7624

  characterised by the mechanical construction of the susceptor, stage or support · CPC title

• H10P72/0466

  characterised by the construction of the load-lock chamber · CPC title

• H10P72/0424

  using mainly spraying means, e.g. nozzles · CPC title

• H10P72/0421 Primary

  for drying etching · CPC title

• H01J37/3244

  Gas supply means · CPC title