System and apparatus for flowable deposition in semiconductor fabrication

Patent metadata

Field	Value
Publication number	US-9719169-B2
Application number	US-201113329078-A
Country	US
Kind code	B2
Filing date	Dec 16, 2011
Priority date	Dec 20, 2010
Publication date	Aug 1, 2017
Grant date	Aug 1, 2017

Abstract

Electronic device fabrication processes, apparatuses and systems for flowable gap fill or flowable deposition techniques are described. In some implementations, a semiconductor fabrication chamber is described which is configured to maintain a semiconductor wafer at a temperature near 0° C. while maintaining most other components within the fabrication chamber at temperatures on the order of 5-10° C. or higher than the wafer temperature.

First claim

What is claimed is:

1. A wafer support apparatus comprising:
a chuck, wherein:
the chuck includes a top surface, a bottom surface, and an outer surface,
the top surface and the bottom surface are both substantially parallel to, and offset from, each other,
the outer surface is located between the top surface and the bottom surface, and
the top surface is configured to support a semiconductor wafer;

a housing; and
a dielectric break, wherein:
the housing includes an outer wall and a housing floor connected to the outer wall,
the housing floor includes a first thermal break region extending from the outer wall towards the center of the housing floor, wherein the first thermal break region stops short of extending all the way towards the center of the housing floor,
the bottom surface of the chuck faces the housing floor,
the bottom surface and the outer surface of the chuck are substantially within a volume defined by the outer wall and the housing floor,
the chuck and the housing are configured to move together as a single assembly within a semiconductor fabrication chamber,
there is no substantial thermal contact between the outer surface of the chuck and the outer wall of the housing,
there is no substantial thermal contact between the bottom surface and the housing floor across the first thermal break region,
the outer surface and the outer wall are substantially cylindrical,
the housing floor is substantially annular and has an inner perimeter,
the thermal break region does not extend to the inner perimeter,
the dielectric break includes an outer dielectric wall and a dielectric floor that meets the outer dielectric wall,
the dielectric floor includes a second thermal break region extending from the outer dielectric wall towards the center of the dielectric floor,
the dielectric floor is interposed between the housing floor and the bottom surface,
the outer dielectric wall is interposed between the outer wall and the outer surface
there is no substantial thermal contact between the outer wall, the outer dielectric wall, and the outer surface,
there is no substantial thermal contact between the bottom surface and the dielectric floor across the second thermal break region, and
there is no substantial thermal contact between the dielectric floor and the housing floor across the first thermal break region.

2. The wafer support of claim 1 , wherein there is no substantial thermal contact between the outer surface of the chuck and the outer wall of the housing across the first thermal break region, and there is no substantial thermal contact between the bottom surface and the housing floor across the first thermal break region, when the wafer support apparatus is exposed to gases and environmental conditions present in a flowable deposition semiconductor fabrication chamber.

3. The wafer support of claim 2 , wherein the gases include Ar or He and the environmental conditions include a pressure of between 25 and 75 Torr.

4. The wafer support of claim 1 , wherein:
there is a gap of at least 0.015″ between substantially all of the outer surface of the chuck and the outer wall of the housing, and
there is a gap of at least 0.015″ between substantially all of the bottom surface and the housing floor across the first thermal break region.

5. The wafer support of claim of claim 1 , wherein:
the outer surface and a surface of the outer dielectric wall facing the outer surface are separated by a gap of between 0.015″ and 0.050″,
the bottom surface and a surface of the dielectric floor within the second thermal break region and facing the bottom surface are separated by a gap of between 0.015″ and 0.050″,
surfaces of the outer dielectric wall and the outer wall facing each other are separated by a gap of between 0.015″ and 0.050″, and a surface of the dielectric floor and a surface of the housing floor within the first thermal break region are separated by a gap of between 0.015″ and 0.050″.

6. The wafer support of claim 1 , further comprising:
a guard ring, wherein the guard ring:
is substantially annular,
has an inner diameter larger than a specified nominal diameter of the semiconductor wafer which the top surface is configured to support,
is supported by the chuck,
is not in contact with the outer wall of the housing or the outer surface of the chuck.

7. The wafer support of claim 6 , wherein:
the guard ring includes a plurality of posts,
each post protrudes from a surface of the guard ring facing the top surface by a first amount and into a recess in the top surface with a depth less than the first amount,
the surface of the guard ring from which the posts protrude is offset from the top surface by between 15 and 250 microns.

8. The wafer support of claim 6 , wherein there is a gap of at least 0.015″ between a surface of the guard ring closest to the outer wall and the outer wall.

9. The wafer support of claim 1 , wherein:
a plurality of raised bosses protrude from the top surface,
the bosses are arranged in concentric circular patterns, and
each boss protrudes from the top surface by 15 to 250 microns.

10. The wafer support of claim 1 , wherein:
the chuck further includes a calibration light pipe and an in-situ light pipe,
one end of the calibration light pipe terminates at the center of the top surface,
one end of the in-situ light pipe terminates at a phosphor puck located between the top surface and the bottom surface, and
the calibration light pipe and the in-situ light pipe are separated, within the chuck, by a distance less than the distance from the center of the housing floor to the first thermal break region.

11. The wafer support of claim 1 , wherein:
the chuck and the housing are made primarily from aluminum, and
the dielectric break is made primarily from Al 2 O 3 .

12. The wafer support of claim 11 , wherein:
the chuck is primarily made from 3003 aluminum, and
the top surface is coated with YF 3 .

13. The wafer support of claim 1 , wherein the chuck includes a cooling channel located between the top surface and the bottom surface and following a circuitous path through the chuck.

14. The wafer support of claim 13 , wherein the circuitous path comprises:
a plurality of nested C-shaped segments of different sizes; and
a plurality of cross-over segments, wherein:
each cross-over segment joins an end of one C-shaped segment with a corresponding end of another C-shaped segment, and
only one cross-over segment joins together any two C-shaped segments.

15. The wafer support of claim 14 , wherein:
the chuck includes a first plate and a second plate,
the first plate includes a first top face and a first bottom face,
the second plate includes a second top face and a second bottom face,
the first top face is bonded to the second bottom face,
the cooling channel is recessed into the second bottom face,
the first plate includes two through-holes,
each through-hole corresponds with a different terminal end of the cooling channel and the first plate and the second plate are aligned such that each through-hole aligns with the corresponding terminal end of the cooling channel.

16. The wafer support of claim 15 , wherein:
the chuck further includes a third plate,
the third plate includes a third top face and a third bottom face,
the third bottom face is bonded to the second top face,
the third bottom face includes an annular purge gas channel and one or more purge gas supply channels fluidly connected with the annular purge gas channel,
a circular pattern of holes fluidly connects the annular purg

Assignees

• Mohn Jonathan D
• Te Nijenhuis Harald
• Hamilton Shawn M
• Madrigal Kevin
• Lingampalli Ramkishan Rao
• Novellus Systems Inc

Inventors

• Mohn Jonathan D
• Te Nijenhuis Harald
• Hamilton Shawn M
• Madrigal Kevin
• Lingampalli Ramkishan Rao

Classifications

• H10P72/7626

  characterised by the construction of the shaft · CPC title

• H10P72/7624

  characterised by the mechanical construction of the susceptor, stage or support · CPC title

• H10P72/0462 Primary

  characterised by the construction of the processing chambers, e.g. modular processing chambers · CPC title

• H10P72/0434

  mainly by convection · CPC title

• C23C16/401 Primary

  containing silicon · CPC title