High-K LTCC dielectric compositions and devices

Patent metadata

Field	Value
Publication number	US-10494306-B2
Application number	US-201615576321-A
Country	US
Kind code	B2
Filing date	Aug 2, 2016
Priority date	Aug 5, 2015
Publication date	Dec 3, 2019
Grant date	Dec 3, 2019

Abstract

Electronic devices are produced from dielectric compositions comprising a mixture of precursor materials that, upon firing, forms a dielectric material comprising a barium-titanium-tungsten-silicon oxide.

First claim

The invention claimed is:

1. A composition comprising a mixture of precursors that, upon firing, forms a dielectric material comprising:
from 57.0 wt % to 73.0 wt % BaO;
from 20.0 wt % to 40.0 wt % TiO 2 ;
from 0.5 wt % to 20.0 wt % WO 3 ;
from 0.05 wt % to 5.0 wt % SiO 2 ;
from 0.1 to 10.0 wt % Bi 2 O 3 ;
from 0.1 to 10.0 wt % ZnO;
from 0.01 to 4.0 wt % B 2 O 3 ;
from 0.01 to 5.0 wt % Li 2 O;
from 0.01 to 2.0 wt % CuO; and
from 0.01 to 2.0 wt % of at least one selected from the group consisting of MnO 2 , Mn 2 O 3 , and MnO.

2. A lead-free and cadmium-free dielectric paste comprising a solids portion, wherein the solids portion comprises the composition of claim 1 .

3. An electric or electronic component comprising, prior to firing, the composition of claim 1 , together with a conductive paste comprising:
60-90 wt % Ag+Pd+Pt+Au,
1-10 wt % of an additive selected from the group consisting of silicides of transition metals, carbides of transition metals, nitrides of transition metals, and borides of transition metals,
0.5-10 wt % of at least one glass frit,
10-40 wt % of an organic portion.

4. An electric or electronic component comprising, prior to firing, the lead-free and cadmium-free dielectric paste of claim 2 , together with a conductive paste comprising:
60-90 wt % Ag+Pd+Pt+Au,
1-10 wt % of an additive selected from the group consisting of silicides of transition metals, carbides of transition metals, nitrides of transition metals, and borides of transition metals,
0.5-10 wt % of at least one glass frit,
10-40 wt % of an organic portion.

5. A method of forming an electronic component comprising:
applying the composition of claim 1 to a substrate; and
firing the substrate at a temperature sufficient to sinter the composition.

6. The method of claim 5 , wherein the firing is conducted at a temperature of from 800° C. to 1000° C.

7. The method of claim 6 , wherein the firing is conducted in air.

8. A method of forming an electronic component comprising:
applying the paste of claim 2 to a substrate; and
firing the substrate at a temperature sufficient to sinter the paste.

9. The method of claim 8 , wherein the firing is conducted at a temperature of from 800° C. to 1000° C.

10. A composition comprising a mixture of precursors, the mixture of precursors comprising:
from 57.0 wt % to 73.0 wt % BaO;
from 20.0 wt % to 40.0 wt % TiO 2 ;
from 0.5 wt % to 20.0 wt % WO 3 ;
from 0.05 wt % to 5.0 wt % SiO 2 ;
from 0.1 to 10.0 wt % Bi 2 O 3 ;
from 0.1 to 10.0 wt % ZnO;
from 0.01 to 4.0 wt % H 3 BO 3 ;
from 0.01 to 5.0 wt % Li 2 CO 3 ;
from 0.01 to 2.0 wt % CuO; and
from 0.01 to 2.0 wt % of at least one selected from the group consisting of MnO 2 , Mn 2 O 3 , and MnO.

11. A lead-free and cadmium-free-dielectric paste comprising a solids portion, the solids portion comprising the composition of claim 10 .

12. An electric or electronic component comprising, prior to firing, the composition of claim 10 , together with a conductive paste comprising:
60-90 wt % Ag+Pd+Pt+Au,
1-10 wt % of an additive selected from the group consisting of silicides of transition metals, carbides of transition metals, nitrides of transition metals, and borides of transition metals,
0.5-10 wt % of at least one glass frit,
10-40 wt % of an organic portion.

13. A method of forming an electronic component comprising:
applying the composition of claim 10 to a substrate; and
firing the substrate at a temperature sufficient to sinter the composition.

14. The method of claim 13 , wherein the firing is conducted at a temperature of from 800° C. to 1000° C.

15. The method of claim 14 , wherein the firing is conducted in air.

16. A method of forming an electronic component comprising:
applying the paste of claim 11 to a substrate, and
firing the substrate at a temperature sufficient to sinter the paste.

Assignees

• Ferro Corp

Inventors

• Symes Jr Walter J

Classifications

• C04B2235/6025

  Tape casting, e.g. with a doctor blade · CPC title

• C04B2235/6584

  at an oxygen percentage below that of air · CPC title

• C04B2237/68

  Forming laminates or joining articles wherein at least one substrate contains at least two different parts of macro-size, e.g. one ceramic substrate layer containing an embedded conductor or electrode · CPC title

• C04B2235/658

  Atmosphere during thermal treatment · CPC title

• B32B18/00

  Layered products essentially comprising ceramics, e.g. refractory products · CPC title