Manganese barrier and adhesion layers for cobalt

Patent metadata

Field	Value
Publication number	US-10438847-B2
Application number	US-201715592046-A
Country	US
Kind code	B2
Filing date	May 10, 2017
Priority date	May 13, 2016
Publication date	Oct 8, 2019
Grant date	Oct 8, 2019

Abstract

Provided herein are methods of forming conductive cobalt (Co) interconnects and Co features. The methods involve deposition of a thin manganese (Mn)-containing film on a dielectric followed by subsequent deposition of cobalt on the Mn-containing film. The Mn-containing film may be deposited on a silicon-containing dielectric, such as silicon dioxide, and annealed to form a manganese silicate.

First claim

What is claimed is:

1. A method comprising:
(a) providing a substrate having a feature comprising a feature opening;
(b) forming a manganese nitride liner layer in the feature and heating the substrate to at least 350° C. to allow manganese to react with a silicon-containing underlayer to form a layer of manganese silicate and to desorb nitrogen from the substrate to form a MnSi y O z layer wherein y and z are numbers greater than zero; and
(c) after (b), exposing the substrate to a cobalt-containing precursor to at least partially fill the feature with cobalt.

2. The method of claim 1 , wherein (c) comprises wholly filling the feature with cobalt.

3. The method of claim 2 , further comprising heating the substrate to a temperature of at least 400° C. to anneal the cobalt.

4. The method of claim 3 , further comprising reacting at least some manganese with cobalt during the heating of the substrate.

5. The method of claim 3 , further comprising alloying at least some of the manganese with cobalt during the heating of the substrate.

6. The method of claim 1 , wherein (b) comprises atomic layer deposition (ALD) or chemical vapor deposition (CVD) of the manganese nitride liner layer in the feature.

7. The method of claim 1 , wherein (c) comprises depositing a cobalt seed layer for a subsequent Co plating process.

8. A method comprising:
(a) providing a substrate having a feature comprising a feature opening; (b) forming a manganese-containing liner layer in the feature; and (c) after (b) exposing the substrate to a cobalt-containing precursor to at least partially fill the feature with cobalt and further comprising, after (b) and before (c), exposing the substrate to nitrogen species to form a differential inhibition profile in the feature.

9. The method of claim 8 , further comprising preferentially depositing cobalt in the in the feature in accordance with the differential inhibition profile.

10. The method of claim 8 , further comprising heating the substrate to a temperature of at least 400° C. to anneal the cobalt.

11. The method of claim 10 , further comprising reacting at least some manganese with cobalt during the heating of the substrate.

12. The method of claim 10 , further comprising alloying at least some of the manganese in the manganese-containing liner layer with cobalt during the heating of the substrate.

13. The method of claim 8 , wherein (b) comprises deposition of an elemental manganese film in the feature.

Assignees

• Lam Res Corp

Inventors

• Lai Chiukin Steven
• Na Jeong-Seok
• Humayun Raashina
• Danek Michal
• Ashtiani Kaihan Abidi

Classifications

• H10P14/43 Primary

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title

• H10W20/4403

  based on metals, e.g. alloys, metal silicides (H10W20/4484 takes precedence) · CPC title

• H10W20/0526

  by thermal treatment thereof · CPC title

• H10W20/076

  in via holes or trenches · CPC title