Method for void-free cobalt gap fill

Patent metadata

Field	Value
Publication number	US-9349637-B2
Application number	US-201414465610-A
Country	US
Kind code	B2
Filing date	Aug 21, 2014
Priority date	Aug 21, 2014
Publication date	May 24, 2016
Grant date	May 24, 2016

Abstract

Provided herein are methods of depositing void-free cobalt into features with high aspect ratios. Methods involve (a) partially filling a feature with cobalt, (b) exposing the feature to a plasma generated from nitrogen-containing gas to selectively inhibit cobalt nucleation on surfaces near or at the top of the feature, optionally repeating (a) and (b), and depositing bulk cobalt into the feature by chemical vapor deposition. Methods may also involve exposing a feature including a barrier layer to a plasma generated from nitrogen-containing gas to selectively inhibit cobalt nucleation. The methods may be performed at low temperatures less than about 400° C. using cobalt-containing precursors.

First claim

What is claimed is:

1. A method comprising:
(a) providing a substrate having one or more features, each feature comprising a feature opening;
(b) selectively inhibiting cobalt nucleation on surfaces of the one or more features that are at or near the feature openings such that there is a differential inhibition profile in each feature; and
(c) depositing cobalt in the one or more features in accordance with the differential inhibition profile.

2. The method of claim 1 , further comprising prior to selectively inhibiting cobalt nucleation, depositing a barrier layer on the one or more features.

3. The method of claim 2 , wherein the barrier layer is selected from the group consisting of titanium, titanium nitride, tungsten, tungsten nitride, tantalum, tantalum nitride, ruthenium, and cobalt nitride.

4. The method of claim 1 , further comprising prior to selectively inhibiting cobalt nucleation, exposing the substrate to a cobalt-containing precursor to partially fill the one or more features.

5. The method of claim 1 , wherein the method is performed at a temperature less than about 400° C.

6. The method of claim 4 , wherein the cobalt-containing precursor is selected from the group consisting of dicarbonyl cyclopentadienyl cobalt, cobalt carbonyl, various cobalt amidinate precursors, cobalt diazadienyl complexes, cobalt amidinate/guanidinate precursors, and combinations thereof.

7. The method of claim 1 , wherein the surfaces of the one or more features that are at or near the feature openings comprise the top about 10% to about 50% of the sidewalls of the one or more features.

8. The method of claim 1 , wherein selectively inhibiting cobalt nucleation further comprises exposing the substrate to plasma generated from nitrogen-containing gas.

9. The method of claim 8 , wherein the substrate is exposed to the plasma generated from the nitrogen-containing gas for a time less than about 300 seconds.

10. The method of claim 8 , wherein the plasma is directional.

11. The method of claim 1 , wherein the one or more features comprise re-entrant profiles.

12. The method of claim 1 , wherein depositing cobalt in (c) comprises exposing the substrate to a cobalt-containing precursor and a reducing agent.

13. The method of claim 1 , wherein (c) is performed by chemical vapor deposition.

14. The method of claim 1 , wherein at least one of the feature openings is less than about 39 nm and at least one feature aspect ratio is at least about 1.5:1.

15. A method comprising:
(a) providing a substrate including one or more features, each feature comprising a feature opening;
(b) exposing the substrate to a cobalt-containing precursor to partially fill the one or more features;
(c) exposing the substrate to a nitrogen-containing gas and a plasma;
(d) optionally repeating (b) and (c); and
(e) depositing cobalt in the one or more features in accordance with a differential inhibition profile.

16. The method of claim 15 , wherein the method is performed at a temperature less than about 400° C.

17. The method of claim 15 , wherein the cobalt-containing precursor is selected from the group consisting of dicarbonyl cyclopentadienyl cobalt, cobalt carbonyl, various cobalt amidinate precursors, cobalt diazadienyl complexes, cobalt amidinate/guanidinate precursors, and combinations thereof.

18. The method of claim 15 , wherein the surfaces of the one or more features that are at or near the feature openings comprise the top about 10% to about 50% of the sidewalls of the one or more features.

Assignees

• Lam Res Corp

Inventors

• Na Jeong-Seok
• Yu Tianhua
• Danek Michal
• Gopinath Sanjay

Classifications

• H10W20/4437

  the principal metal being a transition metal · CPC title

• H10P14/432

  using selective deposition · CPC title

• H10P14/43

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• H10W20/4403

  based on metals, e.g. alloys, metal silicides (H10W20/4484 takes precedence) · CPC title

• H10W20/057

  by selectively depositing, e.g. by using selective CVD or plating · CPC title