Dispersion model for band gap tracking

Patent metadata

Field	Value
Publication number	US-10410935-B1
Application number	US-201715428835-A
Country	US
Kind code	B1
Filing date	Feb 9, 2017
Priority date	Aug 23, 2013
Publication date	Sep 10, 2019
Grant date	Sep 10, 2019

Abstract

Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical models of semiconductor structures capable of accurate characterization of defects in high-K dielectric layers and embedded nanostructures are presented. In one example, the optical dispersion model includes a continuous Cody-Lorentz model having continuous first derivatives that is sensitive to a band gap of a layer of the unfinished, multi-layer semiconductor wafer. These models quickly and accurately represent experimental results in a physically meaningful manner. The model parameter values can be subsequently used to gain insight and control over a manufacturing process.

First claim

What is claimed is:

1. A system comprising:
an illuminator configured to generate an amount of illumination light and direct the amount of illumination light to a multi-layer structure disposed on a surface of a specimen;
a spectrometer configured to receive an amount of collected light from the multi-layer structure in response to the amount of illumination light and generate a spectral measurement of the multi-layer structure; and
one or more computer systems configured to:
receive the spectral measurement of the multi-layer structure across a spectral range;
determine a plurality of parameter values of an optical dispersion model of one or more layers of the multi-layer structure based at least in part on the spectral measurement, wherein the optical dispersion model includes a constrained Cody-Lorentz model having a rate of attenuation of an Urbach function defined such that a first derivative of a dielectric function with respect to energy is continuous at an Urbach transition energy of the constrained Cody-Lorentz model; and
store the plurality of parameter values of the optical dispersion model in a memory.

2. The system of claim 1 , wherein the optical dispersion model is sensitive to a band gap of a layer of the multi-layer structure.

3. The system of claim 1 , wherein the one or more computer systems are further configured to:
determine an electrical characteristic of a first layer of the multi-layer structure based at least in part on the plurality of parameter values of the optical dispersion model of the multi-layer structure.

4. The system of claim 3 , wherein the electrical characteristic of the multi-layer structure is any of an equivalent oxide thickness (EOT), a leakage current, a threshold voltage, and a breakdown voltage.

5. The system of claim 1 , wherein the one or more computer systems are further configured to:
control a process of manufacture of the multi-layer structure based at least in part on a band structure characteristic.

6. The system of claim 1 , wherein the multi-layer structure includes at least one nanostructure.

7. The system of claim 6 , wherein the at least one nanostructure is any of a plurality of quantum dots, a plurality of nanowires, and a plurality of quantum wells.

8. The system of claim 1 , wherein a first layer of the multi-layer structure is an electrically insulative layer disposed above a semiconductor substrate.

9. The system of claim 8 , wherein the multi-layer structure includes an intermediate layer between the semiconductor substrate and the electrically insulative layer.

10. The system of claim 1 , wherein the illuminator and the spectrometer are configured as any of a spectroscopic reflectometer and a spectroscopic ellipsometer.

11. A system comprising:
an illuminator configured to generate an amount of illumination light and direct the amount of illumination light to a multi-layer structure disposed on a surface of a specimen;
a spectrometer configured to receive an amount of collected light from the multi-layer structure in response to the amount of illumination light and generate a spectral measurement of the multi-layer structure; and
a non-transitory, computer-readable medium storing an amount of code that when executed by a computing system causes the computing system to:
receive the spectral measurement of the multi-layer structure across a spectral range;
determine a plurality of parameter values of an optical dispersion model of one or more layers of the multi-layer structure based at least in part on the spectral measurement, wherein the optical dispersion model includes a constrained Cody-Lorentz model having a rate of attenuation of an Urbach function defined such that a first derivative of a dielectric function with respect to energy is continuous at an Urbach transition energy of the constrained Cody-Lorentz model; and
store the plurality of parameter values of the optical dispersion model in a memory.

12. The system of claim 11 , wherein the optical dispersion model is sensitive to a band gap of a layer of the multi-layer structure.

13. The system of claim 11 , wherein the non-transitory, computer-readable medium further causes the computing system to:
determine an electrical characteristic of a first layer of the multi-layer structure based at least in part on the plurality of parameter values of the optical dispersion model of the multi-layer structure.

14. The system of claim 13 , wherein the electrical characteristic of the multi-layer structure is any of an equivalent oxide thickness (EOT), a leakage current, a threshold voltage, and a breakdown voltage.

15. The system of claim 11 , wherein the non-transitory, computer-readable medium further causes the computing system to:
control a process of manufacture of the multi-layer structure based at least in part on a band structure characteristic.

16. The system of claim 11 , wherein the multi-layer structure includes at least one nanostructure.

Assignees

• Kla Tencor Corp

Inventors

• Malkova Natalia
• Poslavsky Leonid
• Di ming
• Zhao Qiang
• Hu Dawei

Classifications

• H10P74/203 Primary

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• G01R31/308

  using non-ionising electromagnetic radiation, e.g. optical radiation {(investigating or analysing materials by the use of optical means G01N21/00; image analysis G06T7/00)} · CPC title

• G01R31/2831

  Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates (G01R31/318511 takes precedence; testing during manufacture H10P74/00) · CPC title

• G01N21/27

  using photo-electric detection (G01N21/31 takes precedence){; circuits for computing concentration (logarithmic circuits G06G7/24; photometric circuits in general G01J)} · CPC title

• G01N2021/95676

  Masks, reticles, shadow masks · CPC title