Methods of forming self-aligned vias

Patent metadata

Field	Value
Publication number	US-10410865-B2
Application number	US-201816128962-A
Country	US
Kind code	B2
Filing date	Sep 12, 2018
Priority date	Sep 30, 2016
Publication date	Sep 10, 2019
Grant date	Sep 10, 2019

Abstract

Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.

First claim

What is claimed is:

1. A processing method comprising:
forming a mask on a substrate, the substrate having a substrate surface comprising a first surface of a first material and a second surface of a second material different from the first material, the mask having an opening exposing at least a portion of the first surface and the second surface;
oxidizing the first material to expand the first material straight up from the first surface through the opening in the mask to extend above a top surface of the mask forming an expanded first material; and
removing the mask from the substrate to leave the expanded first material extending orthogonally from the substrate surface.

2. The method of claim 1 , wherein the first material comprises a metal selected from the group consisting of Co, Mo, W, Ta, Ti, Ru, Rh, Cu, Fe, Mn, V, Nb, Hf, Zr, Y, Al, Sn, Cr, La and combinations thereof.

3. The method of claim 1 , wherein the second material comprises a dielectric.

4. The method of claim 1 , wherein oxidizing the first material comprises exposing the first material to an oxidizing agent comprising one or more of O 2 , O 3 , N 2 O, H 2 O, H 2 O 2 , CO, CO 2 , N 2 /Ar, N 2 /He, or N 2 /Ar/He.

5. The method of claim 1 , further comprising depositing a third material comprising a dielectric on the substrate surface, the third material surrounding the expanded first material extending above the top surface of the mask.

6. The method of claim 5 , wherein the third material comprises a dielectric.

7. The method of claim 6 , wherein the third material is different from the first material and the second material.

8. The method of claim 7 , further comprising etching the expanded first material extending above the top surface of the mask through the third material to leave an opening through the third material.

9. The method of claim 8 , wherein etching the expanded first material comprises exposing the first material to a metal halide compound.

10. The method of claim 9 , wherein the metal halide compound has a different metal than the first material.

11. The method of claim 8 , further comprising depositing a gapfill metal on the third material, the gapfill metal filling the opening of the third material and forming electrical contact with the first material, and removing the gapfill metal from the surface of the third material, leaving the gapfill metal in the openings of the third material.

12. The method of claim 11 , wherein the gapfill metal is different from the first material.

13. The method of claim 11 , further comprising removing the gapfill metal from the surface of the third material, leaving the gapfill metal in the openings of the third material.

14. A processing method comprising:
providing a substrate with a substrate surface comprising a first surface of a first material and a second surface of a second material different from the first material, the first material comprising a metal selected from the group consisting of Co, Mo, W, Ta, Ti, Ru, Rh, Cu, Fe, Mn, V, Nb, Hf, Zr, Y, Al, Sn, Cr, La and combinations thereof, and the second material comprising a dielectric;
forming a mask on the substrate, the mask having an opening exposing at least a portion of the first surface and the second surface;
oxidizing the first material to expand the first material straight up from the first surface through the opening in the mask to extend above a top surface of the mask to form an expanded first material, oxidizing the first material comprises exposing the first material to an oxidizing agent comprising one or more of O 2 , O 3 , N 2 O, H 2 O, H 2 O 2 , CO, CO 2 , N 2 /Ar, N 2 /He or N 2 /Ar/He;
removing the mask from the substrate to leave the first material extending orthogonally from the substrate surface;
depositing a third material comprising a dielectric on the substrate surface, the third material surrounding the orthogonally grown first material extending from the substrate surface;
etching the first material extending from the substrate surface through the third material by exposing the first material to a metal halide to leave an opening through the third material;
depositing a gapfill metal on the third material, the gapfill metal filling the opening of the third material and forming electrical contact with the first material below the third material; and
removing the gapfill metal from the surface of the third material, leaving the gapfill metal in the openings of the third material.

15. The method of claim 14 , wherein the third material comprises a dielectric.

16. The method of claim 15 , wherein the third material is different from the first material and the second material.

17. The method of claim 16 , wherein the gapfill metal is different from the first material.

Assignees

• Applied Materials Inc

Inventors

• Thompson David
• Schmiege Benjamin
• Anthis Jeffrey W
• Mallick Abhijit Basu
• Roy Susmit Singha
• Duan Ziqing
• Chen Yihong
• Chan Kelvin
• Gandikota Srinivas

Classifications

• H10W20/4437

  the principal metal being a transition metal · CPC title

• H10W20/0693

  by forming self-aligned vias · CPC title

• H10P95/00 Primary

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P76/4083

  characterised by their behaviours during the lithography processes, e.g. soluble masks or redeposited masks · CPC title