Microcell interconnection in silicon photomultipliers

Patent metadata

Field	Value
Publication number	US-10371835-B2
Application number	US-201614992635-A
Country	US
Kind code	B2
Filing date	Jan 11, 2016
Priority date	Jan 11, 2016
Publication date	Aug 6, 2019
Grant date	Aug 6, 2019

Abstract

A silicon photomultiplier array including a plurality of microcells arranged in rows and columns. A plurality of circuit traces connecting microcell output ports to the array pixel output port, with one or more impedance matching networks connected to at least one of the circuit traces. The impedance matching networks can be connected between each row circuit trace and the pixel output port. Impedance matching networks can be located between junctions of adjacent microcell output ports and row circuit traces.

First claim

The invention claimed is:

1. A silicon photomultiplier array comprising:
a plurality of microcells within the photomultiplier array, the plurality of microcells arranged in rows and columns;
each of the plurality of microcells including an output port, and configured to provide a pulse waveform having pulse characteristics;
a plurality of circuit traces connecting the output port of the plurality of microcells to a pixel output port of the silicon photomultiplier array; and
an impedance matching circuit for each row of microcells, the impedance matching circuit connected to at least one of the circuit traces and located between a junction of each microcell output port of a last column and the pixel output port of the silicon photomultiplier array, wherein the impedance matching circuit is one of a single stub, a double stub, a lumped-element, and a stepped transmission line.

2. The silicon photomultiplier array of claim 1 , including the circuit traces constructed as transmission lines.

3. The silicon photomultiplier array of claim 2 , the transmission lines being one of a slot line, a microstrip, and a stripline.

4. The silicon photomultiplier array of claim 1 , including one impedance matching circuit connected between each circuit trace of each row and the pixel output port.

Assignees

• Gen Electric

Inventors

• Guo Jianjun
• Ivan Adrian
• Dolinsky Sergei Ivanovich
• Fu Geng

Classifications

• G01T1/208

  Circuits specially adapted for scintillation detectors, e.g. for the photo-multiplier section · CPC title

• G01T1/248 Primary

  Silicon photomultipliers [SiPM], e.g. an avalanche photodiode [APD] array on a common Si substrate · CPC title

• H01L27/14658

  Electricity · mapped topic

• G01T1/247

  Detector read-out circuitry (for processing gain or off-set correction H04N) · CPC title

• H10F39/189

  X-ray, gamma-ray or corpuscular radiation imagers · CPC title