Solid state photomultiplier

Patent metadata

Field	Value
Publication number	US-2016356899-A1
Application number	US-201615174122-A
Country	US
Kind code	A1
Filing date	Jun 6, 2016
Priority date	Jun 5, 2015
Publication date	Dec 8, 2016
Grant date	—

Abstract

Embodiments of a solid state photomultiplier are provided herein. In some embodiments, a solid state photomultiplier may include a microcell configured to generate an analog signal when exposed to optical photons, a quench resistor electrically coupled to the microcell in series; and a first switch disposed between the quench resistor and an output of the solid state photomultiplier, the first switch electrically coupled to the microcell via the quench resistor and configured to selectively couple the microcell to the output.

First claim

1 . A solid state photomultiplier, comprising:
a microcell configured to generate an analog signal when exposed to optical photons, a quench resistor electrically coupled to the microcell in series; and a first switch disposed between the quench resistor and an output of the solid state photomultiplier, the first switch electrically coupled to the microcell via the quench resistor and configured to selectively couple the microcell to the output.

2 . The solid state photomultiplier of claim 1 , wherein the microcell comprises a plurality of microcells, the quench resistor comprises a plurality of quench resistors respectively electrically coupled to the plurality of microcells, and the first switch comprises a plurality of first switches respectively electrically coupled to the plurality of microcells, wherein the plurality of first switches are configured to selectively electrically couple one or more active microcells of the plurality of microcells to the output.

3 . The solid state photomultiplier of claim 2 , further comprising:
a first bus electrically coupling the plurality of microcells to the output; and a second bus electrically coupling the plurality of microcells to quenching mechanism.

4 . The solid state photomultiplier of claim 1 , wherein the output is coupled to readout electronics.

5 . The solid state photomultiplier of claim 1 , wherein the microcell comprises an avalanche photodiode operating in Geiger mode.

6 . The solid state photomultiplier of claim 1 , wherein the first switch is a gate of a semiconductor device.

7 . The solid state photomultiplier of claim 1 , further comprising a comparator coupled to the first switch, wherein the comparator controls operation of the first switch.

8 . The solid state photomultiplier of claim 1 , further comprising:
a second switch disposed between the quench resistor and a quenching mechanism of the solid state photomultiplier, the second switch electrically coupled to the microcell via the quench resistor and configured to selectively couple the microcell to the quenching mechanism.

9 . The solid state photomultiplier of claim 8 , further comprising a comparator coupled to the first switch and the second switch, wherein the comparator controls the first switch and the second switch such that either the first switch is open and the second switch is closed or the first switch is closed and the second switch is open.

10 . The solid state photomultiplier of claim 1 , wherein the quench resistor comprises a first quench resistor and a second quench resistor coupled to one another in series via a common node disposed between the two quench resistors, and wherein the first switch is coupled to the common node.

11 . The solid state photomultiplier of claim 10 , wherein the quench resistor further comprises a third quench resistor disposed between the second quench resistor and a quenching mechanism.

12 . The solid state photomultiplier of claim 10 , further comprising a resistor disposed between the second resistor and the first switch and coupling the second resistor to the first switch.

13 . The solid state photomultiplier of claim 10 , further comprising sensing circuitry coupled to the common node, the sensing circuitry configured to control operation of the switch upon sensing of a predetermined threshold voltage at the common node.

14 . The solid state photomultiplier of claim 13 , wherein the sensing circuitry comprises a logic unit configured to control at least one of a delay or length of time the first switch is maintained in an on or off state.

15 . The solid state photomultiplier of claim 13 , wherein the sensing circuitry and the switch are formed from an nMOS switch.

16 . A radiation detector module, comprising:
a scintillator layer configured to generate photons in response to incident radiation; and a solid state photomultiplier, comprising: a microcell configured to generate an analog signal when exposed to optical photons, a quench resistor electrically coupled to the microcell in series; and a first switch electrically coupled to the microcell, the first switch configured to selectively couple the microcell to an output of the solid state photomultiplier.

17 . The radiation detector module of claim 16 , wherein the microcell comprises a plurality of microcells, the quench resistor comprises a plurality of quench resistors respectively electrically coupled to the plurality of microcells, and the first switch comprises a plurality of first switches respectively electrically coupled to the plurality of microcells, wherein the plurality of first switches are configured to selectively electrically couple one or more active microcells of the plurality of microcells to the output, and wherein the solid state photomultiplier further comprises:
a first bus electrically coupling the plurality of microcells to the output; and
a second bus electrically coupling the plurality of microcells to quenching mechanism.

18 . The radiation detector module of claim 17 , further comprising:
a second switch disposed between the quench resistor and a quenching mechanism of the solid state photomultiplier, the second switch electrically coupled to the microcell via the quench resistor and configured to selectively couple the microcell to the quenching mechanism.

19 . The radiation detector module of claim 18 , further comprising a comparator coupled to the first switch and the second switch, wherein the comparator controls the first switch and the second switch such that either the first switch is open and the second switch is closed or the first switch is closed and the second switch is open.

20 . The radiation detector module of claim 16 , wherein the quench resistor comprises a first quench resistor and a second quench resistor coupled to one another in series via a common node disposed between the two quench resistors, and wherein the first switch is coupled to the common node.

21 . The radiation detector module of claim 20 , wherein the quench resistor further comprises a third quench resistor disposed between the second quench resistor and a quenching mechanism.

22 . The radiation detector module of claim 20 , further comprising a resistor disposed between the second resistor and the first switch and coupling the second resistor to the first switch.

23 . The radiation detector module of claim 20 , further comprising sensing circuitry coupled to the common node, the sensing circuitry configured to control operation of the switch upon sensing of a predetermined threshold voltage at the common node.

24 . The radiation detector module of claim 23 , wherein the sensing circuitry and the switch are formed from an nMOS switch.

Assignees

• Gen Electric

Inventors

• Dolinsky Sergei Ivanovich
• Mcdaniel David Leo

Classifications

• G01T1/249

  specially adapted for use in SPECT or PET (SPECT imaging G01T1/1642; PET imaging G01T1/2985; detecting prohibited goods, e.g. weapons, explosives, hazardous substances, contraband or smuggled objects G01V5/20) · CPC title

• H01L31/115

  Electricity · mapped topic

• H01L27/1443

  Electricity · mapped topic

• G01T1/2018

  Scintillation-photodiode combinations · CPC title

• H01L27/14636

  Electricity · mapped topic