Method of quasi-atomic layer etching of silicon nitride

Patent metadata

Field	Value
Publication number	US-10312102-B2
Application number	US-201715686546-A
Country	US
Kind code	B2
Filing date	Aug 25, 2017
Priority date	Aug 29, 2016
Publication date	Jun 4, 2019
Grant date	Jun 4, 2019

Abstract

A method of etching is described. The method includes providing a substrate having a first material containing silicon nitride and a second material that is different from the first material, forming a first chemical mixture by plasma-excitation of a first process gas containing H and optionally a noble gas, and exposing the first material on the substrate to the first chemical mixture. Thereafter, the method includes forming a second chemical mixture by plasma-excitation of a second process gas containing N, F, O, and optionally a noble element, and exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material relative to the second material.

First claim

The invention claimed is:

1. A method of etching, comprising:
providing a substrate in a plasma processing apparatus, wherein the plasma processing apparatus includes a first power source and a second power source, and the second power source operates at a higher frequency than the first power source, and wherein the substrate includes a first material containing silicon nitride and a second material that is different from the first material;
forming a first chemical mixture in the plasma processing apparatus by plasma-excitation of a first process gas consisting essentially of hydrogen and optionally a noble gas;
exposing the first material on the substrate to the first chemical mixture in the plasma processing apparatus;
after the exposing the first material to the first chemical mixture, forming a second chemical mixture in the plasma processing apparatus by plasma-excitation of a second process gas containing N, F, O, and optionally a noble element;
exposing the first material on the substrate to the second plasma-excited process gas in the plasma processing apparatus to selectively etch the first material relative to the second material; and
wherein during the forming of the first chemical mixture and exposing the first material to the first chemical mixture, the second power source is off.

2. The method of claim 1 , wherein the first process gas consists of H 2 .

3. The method of claim 1 , wherein the first process gas consists of H 2 and Ar.

4. The method of claim 1 , wherein the second process gas contains NF 3 , O 2 , and Ar.

5. The method of claim 1 , wherein the second process gas consists of NF 3 , O 2 , and Ar.

6. The method of claim 1 , wherein the first chemical mixture contains hydrogen ions, and wherein the second chemical mixture contains substantially charge-neutral species.

7. The method of claim 1 , wherein the second material is selected from the group consisting of SiO 2 and organic materials.

8. The method of claim 1 , wherein the first material includes raised features on the substrate, the second material forms sidewall spacers on vertical portions of the raised features, with the sidewall spacers of the second material adjacent to and surrounding the raised features formed of the first material, and wherein the exposing to the second plasma-excited processing gas removes the raised features of the first material but not the sidewall spacers.

9. The method of claim 1 , wherein the plasma excitation of the first process gas or the second process gas includes generating plasma using a capacitively coupled plasma source containing an upper plate electrode, and a lower plate electrode supporting the substrate.

10. The method of claim 1 , wherein the plasma excitation of the first process gas or the second process gas includes generating plasma using an inductively coupled plasma source containing an inductive element, and a lower plate electrode supporting the substrate.

11. The method of claim 1 , wherein the plasma excitation of the first process gas or the second process gas includes generating plasma using a remote plasma source that creates a high radical to ion flux ratio.

12. The method of claim 1 , further comprising:
repeating the steps of forming the first chemical mixture, exposing the first material to the first chemical mixture, forming the second chemical mixture, and exposing the first material to the second chemical mixture to incrementally remove additional portions of the first material.

13. The method of claim 1 , wherein the first material is removed at an etch selectivity of greater than 100-to-1 relative to the second material.

14. The method of claim 1 , wherein the first material is part of a spacer layer conformally applied over a gate structure.

15. The method of claim 1 , wherein the first material is part of a spacer layer conformally applied over a mandrel in a self-aligned multi-patterning (SAMP) process.

16. The method of claim 1 , wherein the first material is a mandrel in a self-aligned multi-patterning (SAMP) process.

17. The method of claim 1 , wherein the first material is a liner on a raised feature or a liner in a recessed feature.

18. The method of claim 1 , wherein during the exposing of the first material on the substrate to the first chemical mixture, the silicon nitride material becomes hydrogenated at a surface region and a sub-surface region of the silicon nitride material; and
wherein during the exposing of the first material on the substrate to the second plasma-excited process gas, an etch rate of the silicon nitride material initially is increasing during etching of the surface region and a first portion of the sub-surface region, and thereafter the etch rate of the silicon nitride material is decreasing during etching of a second portion of the sub-surface region.

19. The method of claim 1 , wherein the first material consists essentially of SixNy, where x and y are integers, and the second material includes silicon, titanium, or an organic material;
wherein during the exposing the first material to the first chemical mixture the first and second materials are not etched, and at least the first material is hydrogenated in surface and sub-surface regions of the first material, and wherein after the exposing the first material to the first chemical mixture the sub-surface regions include a first portion having a hydrogen concentration greater than that at the surface and a second portion having a hydrogen concentration lower than that at the surface; and
wherein the exposing the first material to the first chemical mixture is performed at a pressure lower than a pressure of the exposing the first material to the second plasma-excited process gas.

Assignees

• Tokyo Electron Ltd

Inventors

• Sherpa Sonam D
• Ranjan Alok

Classifications

• H10P50/283 Primary

  by chemical means · CPC title

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P50/242 Primary

  of Group IV materials · CPC title

• C01B21/068

  with silicon · CPC title

• C23C16/0245

  by etching with a plasma · CPC title