Method of quasi-atomic layer etching of silicon nitride
US-10515814-B2 · Dec 24, 2019 · US
with silicon
with silicon · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C01B21/068 |
| Official title | with silicon |
| Display label | with silicon |
| Total patents | 110 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is growing.
| Year | Patents |
|---|---|
| 2015 | 17 |
| 2016 | 7 |
| 2017 | 11 |
| 2018 | 16 |
| 2019 | 14 |
| 2020 | 8 |
| 2021 | 3 |
| 2022 | 10 |
| 2023 | 11 |
| 2024 | 3 |
| 2025 | 6 |
| 2026 | 4 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Composition for forming silica layer, silica layer, and electronic device
US-2019189430-A1 · Jun 20, 2019 · US
Silicon nitride substrate and silicon nitride circuit board using the same
US-10322934-B2 · Jun 18, 2019 · US
Method of quasi-atomic layer etching of silicon nitride
US-10312102-B2 · Jun 4, 2019 · US
Silicon nitride film and method of making thereof
US-10280084-B2 · May 7, 2019 · US
Fine particle production apparatus and fine particle production method
US-10252339-B2 · Apr 9, 2019 · US
Nitrogen substituted carbon and silicon clathrates
US-10236511-B2 · Mar 19, 2019 · US
Tubular electrostatic device
US-2019078204-A1 · Mar 14, 2019 · US
Silicon nitride sintered substrate, silicon nitride sintered substrate sheet, circuit substrate, and production method for silicon nitride sintered substrate
US-2019031566-A1 · Jan 31, 2019 · US
Fracture-resistant layered-substrates and articles including the same
US-10160688-B2 · Dec 25, 2018 · US
Resin composition containing surface-modified inorganic substance, thermally conductive material, and device
US-2018327602-A1 · Nov 15, 2018 · US
Surface-modified inorganic substance, method for manufacturing same, resin composition, thermally conductive material, and device
US-2018327265-A1 · Nov 15, 2018 · US
Production apparatus and production method for fine particles
US-10124406-B2 · Nov 13, 2018 · US
Method of manufacturing semiconductor device
US-10115583-B2 · Oct 30, 2018 · US
Production apparatus and production method for fine particles
US-2018290208-A1 · Oct 11, 2018 · US
Method of quasi-atomic layer etching of silicon nitride
US-2018261462-A1 · Sep 13, 2018 · US
Method of manufacturing semiconductor device
US-2018233348-A1 · Aug 16, 2018 · US
Silicon chalcogenate precursors and methods of forming the silicon chalcogenate precursors
US-2018197735-A1 · Jul 12, 2018 · US
Silicon oxide silicon nitride stack ion-assisted etch
US-9997366-B2 · Jun 12, 2018 · US
Silicon nitride substrate and silicon nitride circuit board using the same
US-2018134558-A1 · May 17, 2018 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C01B21/068?
- CPC C01B21/068 is the Cooperative Patent Classification code for “with silicon.”
- How many patents are filed under CPC C01B21/068 (with silicon)?
- Our database includes 110 publications tagged with this CPC code.
- Is patent activity under CPC C01B21/068 growing?
- Publication counts under this code: 3 in 2024 vs 6 in 2025 (latest complete years).