Chamber cleaning and semiconductor etching gases

Patent metadata

Field	Value
Publication number	US-2016343579-A1
Application number	US-201415106889-A
Country	US
Kind code	A1
Filing date	Dec 22, 2014
Priority date	Dec 30, 2013
Publication date	Nov 24, 2016
Grant date	—

Abstract

The present invention relates to fluoroolefin compositions useful as gases for CVD semiconductor manufacture, particularly for etching applications including methods for removing surface deposits from the interior of a chemical vapor deposition chamber by using an activated gas mixture, and methods for etching the surface of a semiconductor.

First claim

What is claimed is:

1 . An etch gas mixture, comprising at least one fluoroolefin and oxygen,
wherein said hydrofluoroolefin is selected from the group consisting of CHF═CF2, Z—CF3-CF═CHF, Z—CF3-CF═CHF, CF3-CH═CF2, CF3-CF═CH2, CF3-CH═CHF, CF2=CH—CHF, CF2=CF—CF3, Z—CF3-CH═CH—CF3, E-CF3-CH═CHCF3, CF3-CF2-CH═CHF, CF3-CF2-CH═CHF, CH2=CF—CF2-CF3, CHF2-CF═CF—CHF2, Z—CF3-CF═CF—CF3, E-CF3-CF═CF—CF3, CF3-CF═CH—CF3, CF3-CF═CH—CF3, CHF═CF—CF2-CF3, CHF═CF—CF2-CF3, CF2=CF—CHF—CF3, CF2=CF—CF═CF2, CHF═C(CF3)2, CF2=C(CF3)(CHF2), CF2=CH—CH2-CF3, CH2=CF—CF2-CHF2, CF2=CF—CHF—CH2F, CF2=CFCH2CHF2, CHF═CF—CHF—CHF2, CHF2-CF═CH—CHF2, CHF2-CF═CF—CH2F, CHF2-CF═CF—CH2F, CHF2-CH═CF—CHF2, CHF2-CH═CF—CHF2, and CF3C≡CCF3,CHCl═CH—CF3.

2 . The etch gas mixture of claim 1 , further comprising a carrier gas.

3 . The etch gas mixture of claim 1 , wherein the carrier gas is He, Ar, or N 2 ,

4 . The etch gas mixture of claim 1 , wherein the etch gas mixture further comprises a second etch gas, wherein the second etch gas is a second fluoroolefin, perfluorocarbon, SF6, or NF 3 .

5 . The etch gas mixture of claim 4 , wherein the second etch gas is a perfluorocarbon is selected from the group consisting of tetrafluoromethane, hexafluoroethane, octafluoropropane, perfluorotetrahydrofuran, hexaflurobutadiene, and octafluorocyclobutane.

6 . A method of operation of a semiconductor manufacturing process chamber, comprising etching a film on a semiconductor using an etch gas comprising a first fluoroolefin and a second fluoroolefin.

7 . The method of claim 6 , wherein the step of etching a film further comprises,
transferring a photomask to the semiconductor to create a masked surface and an exposed surface, forming a plasma of said etch gas, and exposing the exposed surface of the semiconductor to the plasma to remove portions of the exposed surface of the semiconductor to form an etched surface of the semiconductor.

8 . The method of claim 7 , wherein the method further comprises the steps of forming a second etch gas, activating the second etch gas to form a second plasma, depositing the second plasma on the etched surface to form a polymer layer on the etched surface of the semiconductor.

9 . The method of claim 7 wherein at least one of the at least two fluoroolefin is hexafluoro-2-butyne, HFO-1336mzz, HFO-1234yf or HFO-1234ze.

10 . The method of claim 7 , wherein the at least two fluorolefins comprise HFO-1336mzz and a second fluoroolefin, said second fluoroolefin selected from the group consisting of hexafluoro-2-butyne, hexafluoro-1,2-butadiene, HFO-1234yf or HFO-1234ze.

11 . The method of claim 7 wherein the said surface deposit is selected from the group consisting of silicon oxide, gallium nitride, silicon nitride, silicon oxynitride, silicon carbonitride, tungsten nitride, titanium nitride, and tantalum nitride.

12 . The method of claim 6 , wherein step of forming a plasma from the etch gas is performed in a remote chamber or in the process chamber.

13 . The method of claim 6 , wherein the gas mixture further comprises oxygen in molar ratio of oxygen:fluoroolefin that is at least about 1:1.

14 . The method of claim 11 , wherein the pressure in the process chamber is no more than 30 torr.

15 . The method of claim 11 , wherein the pressure in the remote chamber is from 0.5 torr to 50 torr.

16 . A method for removing surface deposits from a surface in a process chamber, comprising: activating a gas mixture comprising oxygen and a fluoroolefin wherein the molar percentage of fluroolefin in the said gas mixture is from about 5% to about 99%, and contacting said activated gas mixture with the surface deposits and thereby removing at least some of said deposits; wherein said hydrofluoroolefin is selected from and wherein optionally, the step of activation said gas mixture takes place in a remote chamber.

17 . A method as in claim 16 wherein said process chamber is the interior of a deposition chamber that is used in fabricating electronic devices.

Assignees

• Chemours Co Fc Llc

Inventors

• Peng Sheng
• Loh Gary
• Oosaki Yoshimasa

Classifications

• H10P50/242

  of Group IV materials · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P50/283 Primary

  by chemical means · CPC title

• H01J37/3244

  Gas supply means · CPC title

• C23G5/00

  Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents · CPC title