Growth of Nanowires
US-2024344223-A1 · Oct 17, 2024 · US
US10301715B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10301715-B2 |
| Application number | US-201715669095-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 4, 2017 |
| Priority date | Nov 30, 2016 |
| Publication date | May 28, 2019 |
| Grant date | May 28, 2019 |
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Official abstract text for this publication.
A mask for deposition and a manufacturing method thereof are disclosed in aspects of the present disclosure. The disclosed mask for deposition and the manufacturing method thereof include: a deposition part including a plurality of deposition patterns; a peripheral part configured to surround the outside of the deposition part; and at least one extending part provided at the boundary between the deposition part and the peripheral part, wherein the extending part has a thickness smaller than that of the peripheral part. Accordingly, it is possible to enhance the strength of the boundary portion between the peripheral part and the deposition part of the mask for deposition.
Opening claim text (preview).
What is claimed is: 1. A mask for depositing films comprising: a deposition part having a plurality of deposition patterns; a peripheral part surrounding and disposed outside the deposition part; and at least one extending part disposed outside the deposition part and disposed at the peripheral part, wherein the at least one extending part has a thickness smaller than that of the peripheral part, each of the at least one extending part includes one or more first pattern and a second pattern overlapping a portion of the one or more first pattern, and each of the one or more first pattern is connected through the second pattern, wherein the deposition part extends into the at least one extending part and is exposed by the one or more first pattern and the second pattern, wherein a portion comprising the one or more first pattern and the second pattern of the at least one extending part is removed and extended onto the deposition part where the plurality of deposition patterns is exposed. 2. The mask of claim 1 , wherein the at least one extending part extends from the deposition part to a region in which the peripheral part is located. 3. The mask of claim 1 , wherein the peripheral part has a thickness greater than that of the deposition part. 4. The mask of claim 1 , wherein the at least one extending part has the same thickness as that of the deposition part. 5. The mask of claim 1 , wherein the peripheral part has a maximum width when the plurality of deposition patterns is located to have a maximum width among the deposition patterns and between an outermost deposition pattern and the peripheral part. 6. The mask of claim 1 , further comprising a welding line located at the peripheral part. 7. The mask of claim 6 , wherein a surface of the at least one extending part that has a maximum width is adjacent to the welding line with respect to the direction in which the welding line extends. 8. The mask of claim 6 , wherein the first pattern arranged is in a first direction and the second pattern arranged is in a second direction crossing the first direction. 9. The mask of claim 8 , wherein the first direction of the first pattern extends to the same direction as the welding line extends. 10. The mask of claim 9 , wherein the first pattern comprises at least one protrusion formed in at least one end of the first pattern thereof. 11. The mask of claim 9 , wherein the first and second patterns have a bar or polygonal shape. 12. The mask of claim 1 , wherein the at least one extending part has a trapezoidal shape. 13. The mask of claim 1 , further comprising a mask frame at the periphery of the mask, wherein the mask frame is attached to one surface of the peripheral part.
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