Mask for deposition and manufacturing method thereof

US10301715B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10301715-B2
Application numberUS-201715669095-A
CountryUS
Kind codeB2
Filing dateAug 4, 2017
Priority dateNov 30, 2016
Publication dateMay 28, 2019
Grant dateMay 28, 2019

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A mask for deposition and a manufacturing method thereof are disclosed in aspects of the present disclosure. The disclosed mask for deposition and the manufacturing method thereof include: a deposition part including a plurality of deposition patterns; a peripheral part configured to surround the outside of the deposition part; and at least one extending part provided at the boundary between the deposition part and the peripheral part, wherein the extending part has a thickness smaller than that of the peripheral part. Accordingly, it is possible to enhance the strength of the boundary portion between the peripheral part and the deposition part of the mask for deposition.

First claim

Opening claim text (preview).

What is claimed is: 1. A mask for depositing films comprising: a deposition part having a plurality of deposition patterns; a peripheral part surrounding and disposed outside the deposition part; and at least one extending part disposed outside the deposition part and disposed at the peripheral part, wherein the at least one extending part has a thickness smaller than that of the peripheral part, each of the at least one extending part includes one or more first pattern and a second pattern overlapping a portion of the one or more first pattern, and each of the one or more first pattern is connected through the second pattern, wherein the deposition part extends into the at least one extending part and is exposed by the one or more first pattern and the second pattern, wherein a portion comprising the one or more first pattern and the second pattern of the at least one extending part is removed and extended onto the deposition part where the plurality of deposition patterns is exposed. 2. The mask of claim 1 , wherein the at least one extending part extends from the deposition part to a region in which the peripheral part is located. 3. The mask of claim 1 , wherein the peripheral part has a thickness greater than that of the deposition part. 4. The mask of claim 1 , wherein the at least one extending part has the same thickness as that of the deposition part. 5. The mask of claim 1 , wherein the peripheral part has a maximum width when the plurality of deposition patterns is located to have a maximum width among the deposition patterns and between an outermost deposition pattern and the peripheral part. 6. The mask of claim 1 , further comprising a welding line located at the peripheral part. 7. The mask of claim 6 , wherein a surface of the at least one extending part that has a maximum width is adjacent to the welding line with respect to the direction in which the welding line extends. 8. The mask of claim 6 , wherein the first pattern arranged is in a first direction and the second pattern arranged is in a second direction crossing the first direction. 9. The mask of claim 8 , wherein the first direction of the first pattern extends to the same direction as the welding line extends. 10. The mask of claim 9 , wherein the first pattern comprises at least one protrusion formed in at least one end of the first pattern thereof. 11. The mask of claim 9 , wherein the first and second patterns have a bar or polygonal shape. 12. The mask of claim 1 , wherein the at least one extending part has a trapezoidal shape. 13. The mask of claim 1 , further comprising a mask frame at the periphery of the mask, wherein the mask frame is attached to one surface of the peripheral part.

Assignees

Inventors

Classifications

  • C25D1/10Primary

    Moulds; Masks; Masterforms · CPC title

  • Perforated or foraminous objects, e.g. sieves (C25D1/10 takes precedence) · CPC title

  • Process of electroless plating · CPC title

  • Masking devices (stencils B05C17/06; masking devices for which the means for applying liquids or other fluent material is spraying or is not important B05B12/20) · CPC title

  • C23C14/042Primary

    using masks · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US10301715B2 cover?
A mask for deposition and a manufacturing method thereof are disclosed in aspects of the present disclosure. The disclosed mask for deposition and the manufacturing method thereof include: a deposition part including a plurality of deposition patterns; a peripheral part configured to surround the outside of the deposition part; and at least one extending part provided at the boundary between th…
Who is the assignee on this patent?
Lg Display Co Ltd
What technology area does this patent fall under?
Primary CPC classification C25D1/10. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue May 28 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).