Deposition mask, method of manufacturing deposition mask, and method of manufacturing display apparatus

Patent metadata

Field	Value
Publication number	US-2016145762-A1
Application number	US-201514947714-A
Country	US
Kind code	A1
Filing date	Nov 20, 2015
Priority date	Nov 21, 2014
Publication date	May 26, 2016
Grant date	—

Abstract

A deposition mask including a mask body including a plurality of pattern holes; a plurality of protrusions protruding from the mask body; and a plurality of grooves formed in the mask body. A grain size of the mask body is in arrange of about 10 μm to about 1000 μm, and a difference between a maximum height of the plurality of protrusions and a maximum height of the plurality of grooves is equal to or less than 0.5 μm.

First claim

What is claimed is:

1 . A deposition mask comprising:
a mask body comprising a plurality of pattern holes; a plurality of protrusions protruding from the mask body; and a plurality of grooves formed in the mask body, wherein: a grain size of the mask body is in a range of about 10 μm to about 1000 μm; and a difference between a maximum height of the plurality of protrusions and a maximum height of the plurality of grooves is equal to or less than 0.5 μm.

2 . The deposition mask of claim 1 , wherein the mask body comprises an invar alloy containing nickel in a range of about 30 wt % to about 50 wt %.

3 . The deposition mask of claim 1 , wherein a thickness of the mask body is in a range of about 5 μm to about 50 μm.

4 . The deposition mask of claim 1 , wherein a radius of curvature of corners of the plurality of pattern holes is smaller than a radius of a laser beam used to process the plurality of pattern holes.

5 . The deposition mask of claim 1 , wherein a unit area of the plurality of pattern holes in a horizontal direction is different along a vertical direction of the plurality of pattern holes.

6 . The deposition mask of claim 5 , wherein an inner surface of the plurality of pattern holes is inclined.

7 . A method of manufacturing a deposition mask, the method comprising:
processing a parent metal of the deposition mask by performing an electro-forming process; placing the parent metal of the deposition mask between a stage and a beam splitter that splits a laser beam oscillated by a laser oscillator into a plurality of laser beams; placing an optical mirror that is penetrated by at least some of the plurality of laser beams between the parent metal and the beam splitter; and processing pattern holes in the parent metal by irradiating the plurality of laser beams onto a portion of the parent metal exposed by the optical mirror through a scanner that adjusts an irradiation direction of the plurality of laser beams that have passed through the beam splitter.

8 . The method of claim 7 , wherein a grain size of the parent metal is in a range of about 10 μm to about 1000 μm.

9 . The method of claim 7 , wherein the parent metal comprises:
a plurality of protrusions protruding from a surface of the parent metal; and a plurality of grooves formed in the surface of the parent metal, wherein a difference between a maximum height of the plurality of protrusions and a maximum height of the plurality of grooves is equal to or less than 0.5 μm.

10 . The method of claim 7 , wherein the parent metal comprises an invar alloy containing nickel in a range of about 30 wt % to about 50 wt %.

11 . The method of claim 7 , wherein a thickness of the mask body is in a range of about 5 μm to about 50 μm.

12 . The method of claim 7 , wherein a unit area of the pattern holes in a horizontal direction is different along a vertical direction of the pattern holes.

13 . The method of claim 12 , wherein an inner surface of the pattern holes is inclined.

14 . The method of claim 7 , wherein the placing of the parent metal between the stage and the beam splitter comprises adsorbing the parent metal by using an electrostatic chuck disposed between the stage and the parent metal.

15 . The method of claim 7 , wherein the placing of the optical mirror between the stage and the beam splitter comprises aligning locations of a first mask formed in the optical mirror and a second mark formed in the parent metal to correspond to a shape of the first mark.

16 . The method of claim 7 , further comprising:
monitoring locations of the optical mirror and the parent metal; and aligning the optical mirror and the parent metal by moving at least one of the optical mirror and the parent metal.

17 . The method of claim 16 , wherein:
a first mark is formed in the optical mirror; a second mark corresponding to a shape of the first mark is formed in the parent metal; and locations of the first mark and the second mark are aligned by moving at least one of the optical mirror and the parent metal.

18 . The method of claim 7 , wherein the plurality of laser beams that have passed through the scanner are irradiated onto the parent metal in a vertical direction.

19 . The method of claim 7 , wherein the optical mirror comprises:
a penetration layer configured to allow some of the plurality of laser beams to penetrate the optical mirror; and a reflection layer configured to reflect remaining ones of the plurality of laser beams, wherein the reflection layer comprises openings corresponding to a shape of the pattern holes.

20 . The method of claim 19 , wherein the penetration layer comprises at least one of quartz and glass.

21 . The method of claim 19 , wherein the reflection layer comprises opaque metal.

22 . The method of claim 19 , wherein a radius of curvature of corners of the openings is smaller than a radius of the plurality of laser beams.

23 . A method of manufacturing a display apparatus comprising a pixel electrode and a counter electrode that face each other on a substrate and an organic layer disposed between the pixel electrode and the counter electrode, the method comprising depositing the organic layer by using a deposition mask, wherein:
the deposition mask comprises:
a mask body comprising a plurality of pattern holes;
a plurality of protrusions protruding from the mask body; and
a plurality of grooves formed in the mask body;
a grain size of the mask body is in a range of about 10 μm to about 1000 μm; and a difference between a maximum height of the plurality of protrusions and a maximum height of the plurality of grooves is equal to or less than 0.5 μm.

24 . The method of claim 23 , wherein the mask body comprises an invar alloy containing nickel in a range of about 30 wt % to about 50 wt %.

25 . The method of claim 23 , wherein a thickness of the mask body is in a range of about 5 μum to about 50 μm.

26 . The method of claim 23 , wherein the deposition mask is manufactured by irradiating at least one laser beam onto a parent metal of the deposition mask manufactured by performing an electro-forming process and processing the plurality of pattern holes.

27 . The method of claim 23 , wherein a radius of curvature of corners of the plurality of pattern holes is smaller than a radius of a laser beam used to process the plurality of pattern holes.

28 . The method of claim 23 , wherein a unit area of the plurality of pattern holes in a horizontal direction is different along a vertical direction of the plurality of pattern holes.

29 . The method of claim 23 , wherein an inner surface of the plurality of pattern holes is inclined.

Assignees

• Samsung Display Co Ltd

Inventors

• Im Sungsoon
• Hwang Kyu H
• Kim Jaesik
• Moon Minho
• Moon Youngmin
• Chang Soonchul
• Kang Taewook

Classifications

• C25D21/12 Primary

  Process control or regulation (controlling or regulating in general G05) · CPC title

• B05B15/045

  Operations & Transport · mapped topic

• H01L51/56

  Electricity · mapped topic

• C25D1/10 Primary

  Moulds; Masks; Masterforms · CPC title

• H01L51/0011

  Electricity · mapped topic