Manufacturing method of metal mask and mask for deposition using thereof

US2016289854A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2016289854-A1
Application numberUS-201514864924-A
CountryUS
Kind codeA1
Filing dateSep 25, 2015
Priority dateMar 31, 2015
Publication dateOct 6, 2016
Grant date

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A mask manufacturing method, including manufacturing a first mold, including forming first patterns having inclined surfaces by patterning a silicon substrate; manufacturing a second mold, including forming second patterns that correspond to the first patterns by coating and curing a hardener on a surface of the first mold in which the first patterns are formed; separating the second mold from the first mold; forming a mask pattern by coating a metal layer on the second mold; and separating the metal layer from the second mold.

First claim

Opening claim text (preview).

What is claimed is: 1 . A mask manufacturing method, comprising: manufacturing a first mold, including forming first patterns having inclined surfaces by patterning a silicon substrate; manufacturing a second mold, including forming second patterns that correspond to the first patterns by coating and curing a hardener on a surface of the first mold in which the first patterns are formed; separating the second mold from the first mold; forming a mask pattern by coating a metal layer on the second mold; and separating the metal layer from the second mold. 2 . The mask manufacturing method as claimed in claim 1 , wherein: the first patterns are concave patterns, and the second patterns are protruding patterns. 3 . The mask manufacturing method as claimed in claim 1 , wherein a thickness of the metal layer is smaller than a thickness of the second patterns. 4 . The mask manufacturing method as claimed in claim 1 , wherein: the silicon substrate is an anisotropic silicon substrate, and in manufacturing the first mold, anisotropic etching is performed on the silicon substrate. 5 . The mask manufacturing method as claimed in claim 4 , wherein the silicon substrate is formed of a (100)-oriented silicon substrate. 6 . The mask manufacturing method as claimed in claim 1 , wherein each first pattern has a triangular-shaped cross-section having one open side. 7 . The mask manufacturing method as claimed in claim 1 , wherein each first pattern has a trapezoid-shaped cross-section having one open side. 8 . The mask manufacturing method as claimed in claim 1 , wherein the hardener includes a thermosetting resin. 9 . The mask manufacturing method as claimed in claim 8 , wherein, in manufacturing the second mold, a carrier substrate is layered above the hardener. 10 . The mask manufacturing method as claimed in claim 1 , wherein the hardener includes a photosensitive resin. 11 . The mask manufacturing method as claimed in claim 10 , wherein, in manufacturing the second mold, a light transmissive electric conductive layer and a carrier substrate are sequentially layered above the hardener. 12 . The mask manufacturing method as claimed in claim 1 , wherein: two or more first patterns are formed in the silicon substrate at a distance from each other, and two or more second patterns are disposed at locations corresponding to the first patterns. 13 . The mask manufacturing method as claimed in claim 12 , wherein, in separating the second mold, spaces between neighboring second patterns are opened by performing an etching process on the hardener. 14 . The mask manufacturing method as claimed in claim 1 , wherein the metal layer is formed through an electro-forming coating process. 15 . A mask for deposition, manufactured using a mask manufacturing method as claimed in claim 1 and having mask patterns formed therein, wherein the mask pattern is gradually narrowed toward a rear plane of the mask from a front plane of the mask. 16 . The mask as claimed in claim 15 , wherein a shape of the mask pattern viewed from the front plane is a rectangular-shaped cross-section. 17 . The mask as claimed in claim 15 , wherein the shape of the mask pattern viewed from the front plane is a rectangular shape.

Assignees

Inventors

Classifications

  • Operations & Transport · mapped topic

  • C25D1/10Primary

    Moulds; Masks; Masterforms · CPC title

  • Masking devices (stencils B05C17/06; masking devices for which the means for applying liquids or other fluent material is spraying or is not important B05B12/20) · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US2016289854A1 cover?
A mask manufacturing method, including manufacturing a first mold, including forming first patterns having inclined surfaces by patterning a silicon substrate; manufacturing a second mold, including forming second patterns that correspond to the first patterns by coating and curing a hardener on a surface of the first mold in which the first patterns are formed; separating the second mold from …
Who is the assignee on this patent?
Samsung Display Co Ltd
What technology area does this patent fall under?
Primary CPC classification C25D1/10. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Thu Oct 06 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).