Crystal growth atmosphere for oxyorthosilicate materials production

Patent metadata

Field	Value
Publication number	US-10227709-B2
Application number	US-201514623760-A
Country	US
Kind code	B2
Filing date	Feb 17, 2015
Priority date	Nov 24, 2010
Publication date	Mar 12, 2019
Grant date	Mar 12, 2019

Abstract

A method of growing a rare-earth oxyorthosilicate crystal, and crystals grown using the method are disclosed. The method includes preparing a melt by melting a first substance including at least one first rare-earth element and providing an atmosphere that includes an inert gas and a gas including oxygen.

First claim

What is claimed is:

1. A method of growing a rare-earth oxyorthosilicate crystal, comprising:
preparing a melt by melting a first substance comprising at least one first rare-earth element; and
melting at least one of: a substance comprising a group 2 element, a substance comprising a group 3 element; a substance comprising a group 6 element, and a substance comprising a group 7 element;
providing a surface of the melt with an atmosphere comprising an inert gas and an oxygen-containing compound that disassociates to oxygen; where the oxygen-containing compound is selected from carbon dioxide, carbon monoxide, sulfur trioxide, phosphorus pentoxide, NO 2 , N 2 O, NO, N 2 O 3 , N 2 O 5 , or a combination thereof; and where the oxygen derived from the disassociation of the oxygen-containing compound is present in the atmosphere in an amount of at least 100 parts per million but less than 300 parts per million;
contacting the surface of the melt with a seed crystal; and
growing a colorless oxyorthosilicate single crystal from the melt by withdrawing the seed crystal from the melt.

2. The method of claim 1 , wherein the inert gas has a thermal conductivity less than or equal to 150 mW/m-° K at the temperature used during crystal growth.

3. The method of claim 1 , wherein the inert gas comprises at least one of helium, argon, krypton, or xenon.

4. The method of claim 1 , wherein the inert gas comprises nitrogen.

5. The method of claim 1 , wherein preparing a melt further comprises melting a second substance comprising a second rare-earth element, the second rare-earth element being incorporated into the rare-earth oxyorthosilicate crystal as a dopant.

6. The method of claim 5 , wherein the second rare-earth element is cerium.

7. The method of claim 1 , wherein the first rare-earth element is lutetium, and growing an oxyorthosilicate single crystal comprises growing a lutetium oxyorthosilicate single crystal.

8. A method of making a single crystalline oxyorthosilicate scintillator material, the material comprising:
preparing a starting material comprising a rare-earth element, a codopant comprising at least one of a group 2 element, a group 3 element; where the group 3 element is scandium, a group 6 element and a group 7 element, an activator, silicon and oxygen; and
forming a colorless single crystal of an oxyorthosilicate of the first rare-earth element and doped with the activator from the starting material in an atmosphere comprising an inert gas and an oxygen-containing compound that disassociates to oxygen; where the oxygen-containing compound is selected from carbon dioxide, carbon monoxide, sulfur trioxide, phosphorus pentoxide, NO 2 , N 2 O, NO, N 2 O 3 , N 2 O 5 , or a combination thereof; and where the oxygen derived from the disassociation of the oxygen-containing compound is present in the atmosphere in an amount of at least 100 parts per million but less than 300 parts per million.

9. The method of claim 8 , wherein preparing a starting material comprises making melt of the starting material, and wherein forming a single comprises growing a single crystal from the melt.

10. The method of claim 8 , wherein the rare-earth element comprises lutetium and the activator is cerium.

Assignees

• Siemens Medical Solutions Usa Inc

Inventors

• Andreaco Mark S
• Cohen Peter Carl
• Carey Alexander Andrew

Classifications

• C09K11/7706

  Aluminates · CPC title

• C30B15/02 Primary

  adding crystallising materials or reactants forming it in situ to the melt · CPC title

• C30B29/34

  Silicates · CPC title

• C09K11/7774

  Aluminates · CPC title

• C30B15/04 Primary

  adding doping materials, e.g. for n-p-junction · CPC title