Weir for inhibiting melt contamination

Patent metadata

Field	Value
Publication number	US-9476141-B2
Application number	US-201414341584-A
Country	US
Kind code	B2
Filing date	Jul 25, 2014
Priority date	Jul 25, 2014
Publication date	Oct 25, 2016
Grant date	Oct 25, 2016

Abstract

A system for growing a crystal ingot from a melt is provided. The system includes a first crucible, a barrier, and a shield. The first crucible has a first base and a first sidewall forming a first cavity for containing the melt. The barrier is disposed within the first cavity of the first crucible to inhibit movement of the melt from outward of the barrier to inward of the barrier. The barrier extends from the first base to above the melt. The barrier has an inner arm and an outer arm extending upward to form a channel therebetween. The shield extends downward between the inner arm and the outer arm to inhibit passage of contaminants.

First claim

What is claimed is:

1. A system for growing a crystal ingot from a melt, the system comprising:
a first crucible having a first base and a first sidewall forming a first cavity for containing the melt;
a barrier disposed within the first cavity of the first crucible to inhibit movement of the melt from outward of the barrier to inward of the barrier, the barrier extending from the first base to above the melt to be contained therein, the barrier having an inner arm and an outer arm extending upward to form a channel therebetween; and
a shield extending downward between the inner arm and the outer arm to inhibit passage of contaminants.

2. The system of claim 1 , wherein one of the arms is spaced at a greater distance from the barrier than the other arm.

3. The system of claim 1 , wherein the inner arm is connected with the barrier through an inner shoulder and the outer arm is connected with the barrier through an outer shoulder, the inner shoulder and the outer shoulder spacing the inner arm and the outer arm from the barrier.

4. The system of claim 3 , wherein at least one of the inner shoulder and the outer shoulder curves outward and upward from the barrier.

5. The system of claim 1 , wherein one of the arms forms an oblique angle with at least one of the other arm and the barrier.

6. The system of claim 1 , wherein the barrier is formed as a single unit with at least one of the arms.

7. The system of claim 1 , wherein the barrier is a second crucible having a passage therethrough.

8. A system for growing a crystal ingot from a melt, the system comprising:
a first crucible having a first base and a first sidewall forming a first cavity for containing the melt;
a barrier disposed within the first cavity of the first crucible to inhibit movement of the melt from a location outward of the barrier to a location inward of the barrier;
a divider disposed on top of the barrier, the divider having an upwardly extending inner arm and an upwardly extending outer arm; and
a shield extending downward between the inner arm and the outer arm to inhibit passage of contaminants.

9. The system of claim 8 , wherein the divider includes a pedestal connecting the inner arm with the outer arm.

10. The system of claim 9 , wherein the pedestal includes an annular recess to receive at least a portion of the barrier therein.

11. The system of claim 10 , wherein the pedestal includes a seal disposed within the annular recess.

12. The system of claim 9 , wherein the pedestal is formed as a single unit with at least one of the arms.

13. The system of claim 9 , wherein the pedestal and one of the arms is bonded together.

14. The system of claim 9 , wherein one of the arms forms an oblique angle with at least one of the other arm, the pedestal, and the barrier.

15. The system of claim 9 , wherein the pedestal and one of the arms include interconnecting structure.

16. The system of claim 15 , wherein the interconnecting structure is a recess in the pedestal for accepting a portion of one of the arms therein.

17. The system of claim 8 , wherein one of the arms is spaced at a greater distance from the barrier than the other arm.

18. The system of claim 8 , wherein the barrier is a second crucible having a passage therethrough.

19. The system of claim 18 , further comprising a second barrier located between the first crucible and the second crucible.

20. The system of claim 8 , wherein the inner arm has an inner length and the outer arm has an outer length, the inner length is unequal to the outer length.

Assignees

• Sunedison Inc

Inventors

• Swaminathan Tirumani

Classifications

• C30B15/02

  adding crystallising materials or reactants forming it in situ to the melt · CPC title

• Y10T117/1052

  including a sectioned crucible [e.g., double crucible, baffle] · CPC title

• Y10T117/1064

  including a fully-sealed or vacuum-maintained crystallization chamber [e.g., ampoule] · CPC title

• C30B29/06 Primary

  Silicon · CPC title

• C30B15/12 Primary

  Double crucible methods · CPC title