Use of quartz plates during growth of single crystal silicon ingots
US-12146236-B2 · Nov 19, 2024 · US
Process for growing silicon carbide single crystal and device for the same
US9359690B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9359690-B2 |
| Application number | US-201113880562-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 17, 2011 |
| Priority date | Oct 21, 2010 |
| Publication date | Jun 7, 2016 |
| Grant date | Jun 7, 2016 |
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- Title
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Abstract
Official abstract text for this publication.
Provided is a method for manufacturing a silicon carbide single crystal using a solution process including coming a seed crystal substrate for growing silicon carbide into contact with a Si—C alloy solution including at least one additive metal and growing the silicon carbide single crystal on a seed crystal for growing silicon carbide, including feeding a silicon feedstock into an alloy solution when a molar ratio of Si and the additive metal is lower than an initially set value as the reaction progresses. The method increases a crystal growth speed, maintains the growth speed, and prevents the growth from unwillingly stopping when the silicon carbide single crystal is manufactured using a solution growth process.
First claim
Opening claim text (preview).
The invention claimed is: 1. A device for manufacturing a silicon carbide single crystal using a solution growth process, which includes a crucible receiving a Si-C alloy solution in a growth furnace and a seed crystal fixed shaft including a seed crystal substrate for growing silicon carbide in a growth furnace, comprising: a silicon feed unit feeding a silicon feedstock into the crucible, wherein the silicon feed unit includes a feed tube having a tube shape formed through at least a portion of the seed crystal fixed shaft. 2. The device of claim 1 , wherein the silicon feed unit includes a gas supply tube supplying an atmospheric gas.
Assignees
Inventors
Classifications
Silicon carbide · CPC title
using solutions · CPC title
- C30B15/002Primary
Continuous growth · CPC title
using molten solvents, e.g. flux · CPC title
Continuous growth · CPC title
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- What does patent US9359690B2 cover?
- Provided is a method for manufacturing a silicon carbide single crystal using a solution process including coming a seed crystal substrate for growing silicon carbide into contact with a Si—C alloy solution including at least one additive metal and growing the silicon carbide single crystal on a seed crystal for growing silicon carbide, including feeding a silicon feedstock into an alloy soluti…
- Who is the assignee on this patent?
- Hong Sung Wan, Kim Young Shol, Sk Innovation Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification C30B15/002. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jun 07 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).