Quartz glass crucible, method for producing the same, and method for producing silicon single crystal

Patent metadata

Field	Value
Publication number	US-9376336-B2
Application number	US-201113824874-A
Country	US
Kind code	B2
Filing date	Sep 26, 2011
Priority date	Nov 5, 2010
Publication date	Jun 28, 2016
Grant date	Jun 28, 2016

Abstract

Described herein is a method for producing a quartz glass crucible, including the steps of: preparing a crucible base material that is made of quartz glass and has a crucible shape; producing a synthetic quartz glass material by the direct process or the soot process; processing the synthetic quartz glass material into a crucible shape without pulverizing the synthetic quartz glass material; and welding the synthetic quartz glass material processed into the crucible shape to the inner surface of the crucible base material. As a result, there are provided a quartz glass crucible that avoids generation of dislocation in a silicon single crystal, the generation of dislocation caused by the crucible itself, at the time of production of a silicon single crystal and has high heat resistance, a method for producing the quartz glass crucible, and a method for producing a silicon single crystal, the method using such a quartz glass crucible.

First claim

The invention claimed is:

1. A method for producing a quartz glass crucible, comprising the steps of:
preparing a crucible base material that is made of quartz glass and has a crucible shape;
producing a synthetic quartz glass material by a direct process or a soot process;
processing the synthetic quartz glass material into a crucible shape without pulverizing the synthetic quartz glass material; and
welding the synthetic quartz glass material processed into the crucible shape to an inner surface of the crucible base material
wherein
the welding is performed as the same time by the application of heat performed when the synthetic quartz glass material processed into the crucible shape is placed inside the crucible base material, the inside of the synthetic quartz glass material is filled with polycrystalline silicon, and the polycrystalline silicon is melted in a silicon single crystal pulling apparatus.

2. The method for producing a quartz glass crucible according to claim 1 , wherein
in the production of the synthetic quartz glass material, the synthetic quartz glass material is produced as a synthetic quartz glass material with a hydroxyl group content of 100 to 800 ppm.

3. The method for producing a quartz glass crucible according to claim 1 , wherein
in the production of the synthetic quartz glass material, the synthetic quartz glass material is produced as a plate-like synthetic quartz glass material having a thickness of 1 mm or more.

4. The method for producing a quartz glass crucible according to claim 1 , wherein
in the processing of the synthetic quartz glass material into the crucible shape, the crucible shape is formed from one or more synthetic quartz glass materials.

5. A method for producing a silicon single crystal, wherein
a silicon single crystal is produced by producing the quartz glass crucible at the same time as the melting of the polycrystalline silicon by the method for producing a quartz glass crucible according to claim 1 and then pulling a silicon single crystal upwardly from silicon melt produced by the melting of the polycrystalline silicon by the Czochralski process.

Assignees

• Kimura Akihiro
• Matsumoto Suguru
• Fusegawa Izumi
• Miki Katsuhiko
• Shinetsu Handotai Kk

Inventors

• Kimura Akihiro
• Matsumoto Suguru
• Fusegawa Izumi
• Miki Katsuhiko

Classifications

• Y10T117/1032

  Seed pulling · CPC title

• Y02P40/57

  Improving the yield, e-g- reduction of reject rates · CPC title

• C30B15/10

  Crucibles or containers for supporting the melt · CPC title

• C03B20/00 Primary

  Processes specially adapted for the production of quartz or fused silica articles {, not otherwise provided for (C03B19/01, C03B19/066, C03B19/106, C03B19/12, C03B19/14, C03B37/00 take precedence)} · CPC title

• C03B19/095 Primary

  by centrifuging, e.g. arc discharge in rotating mould (crucibles for crystal pulling in general C30B15/10, C30B35/002) · CPC title