Crystal-pulling method for pulling monocrystalline silicon
US-2024084478-A1 · Mar 14, 2024 · US
adding doping materials, e.g. for n-p-junction
adding doping materials, e.g. for n-p-junction · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B15/04 |
| Official title | adding doping materials, e.g. for n-p-junction |
| Display label | adding doping materials, e.g. for n-p-junction |
| Total patents | 304 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 15 |
| 2016 | 16 |
| 2017 | 23 |
| 2018 | 33 |
| 2019 | 24 |
| 2020 | 39 |
| 2021 | 30 |
| 2022 | 24 |
| 2023 | 30 |
| 2024 | 33 |
| 2025 | 28 |
| 2026 | 9 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Method for growing monocrystalline silicon and monocrystalline silicon ingot prepared thereof
US-10100431-B2 · Oct 16, 2018 · US
Method for producing a silicon single crystal doped with red phosphorous with reduced number of stacking faults and method for producing a silicon wafer using the same
US-10100429-B2 · Oct 16, 2018 · US
Semiconductor structure and method
US-9945048-B2 · Apr 17, 2018 · US
Liquid doping systems and methods for controlled doping of a melt
US-2018044814-A1 · Feb 15, 2018 · US
Scintillation crystal, a radiation detection system including the scintillation crystal, and a method of using the radiation detection system
US-2018010041-A1 · Jan 11, 2018 · US
Method for manufacturing fz silicon single crystal for solar cell and solar cell
US-2017350035-A1 · Dec 7, 2017 · US
Method for growing monocrystalline silicon and monocrystalline silicon ingot prepared thereof
US-9834861-B2 · Dec 5, 2017 · US
Method for producing single crystal
US-2017327966-A1 · Nov 16, 2017 · US
Method for manufacturing silicon single crystal
US-9809901-B2 · Nov 7, 2017 · US
Method of forming a scintillation crystal including a rare earth halide
US-9796922-B2 · Oct 24, 2017 · US
Semiconductor device, silicon wafer and silicon ingot
US-9786748-B2 · Oct 10, 2017 · US
Method for producing single crystal and method for producing silicon wafer
US-2017283980-A1 · Oct 5, 2017 · US
Process for Producing Silicon Single Crystal
US-2017283981-A1 · Oct 5, 2017 · US
Method of producing silicon single crystal ingot
US-9777394-B2 · Oct 3, 2017 · US
Method for controlling resistivity and n-type silicon single crystal
US-2017260645-A1 · Sep 14, 2017 · US
Method for growing monocrystalline silicon and monocrystalline silicon ingot prepared thereof
US-2017253993-A1 · Sep 7, 2017 · US
Method for growing monocrystalline silicon and monocrystalline silicon ingot prepared thereof
US-2017253991-A1 · Sep 7, 2017 · US
Feed system for crystal pulling systems
US-2017247809-A1 · Aug 31, 2017 · US
Silicon carbide crystal ingot, silicon carbide wafer, and method for producing silicon carbide crystal ingot and silicon carbide wafer
US-2017170279-A1 · Jun 15, 2017 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B15/04?
- CPC C30B15/04 is the Cooperative Patent Classification code for “adding doping materials, e.g. for n-p-junction.”
- How many patents are filed under CPC C30B15/04 (adding doping materials, e.g. for n-p-junction)?
- Our database includes 304 publications tagged with this CPC code.
- Is patent activity under CPC C30B15/04 growing?
- Publication counts under this code: 33 in 2024 vs 28 in 2025 (latest complete years).