Aluminum compound, method of forming thin film by using the same, and method of fabricating integrated circuit device

Patent metadata

Field	Value
Publication number	US-10224200-B2
Application number	US-201715455879-A
Country	US
Kind code	B2
Filing date	Mar 10, 2017
Priority date	Sep 13, 2016
Publication date	Mar 5, 2019
Grant date	Mar 5, 2019

Abstract

An aluminum compound is represented by Chemical Formula (I) and is used as a source material for forming an aluminum-containing thin film.

First claim

What is claimed is:

1. A method of forming a thin film, the method comprising:
forming an aluminum oxide film on a substrate using an aluminum compound represented by Chemical Formula (I):

wherein each of R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , and R 8 are independently a hydrogen atom, a halogen atom, a C1 to C7 substituted or unsubstituted alkyl group, a C2 to C7 substituted or unsubstituted alkenyl group, a C2 to C7 substituted or unsubstituted alkynyl group, or a C4 to C20 substituted or unsubstituted aromatic or alicyclic hydrocarbon group;
wherein the forming includes maintaining the substrate at a temperature from about 350° C. to about 550° C.,
wherein the forming forms the aluminum oxide film by sequentially supplying the aluminum compound and a reactive gas onto the substrate, the reactive gas including an oxidative gas.

2. The method according to claim 1 , wherein the forming forms the aluminum oxide film using the aluminum compound represented by Chemical Formula (II):

wherein each of R1 and R5 are independently a C1 to C7 alkyl group.

3. The method according to claim 1 , wherein the forming supplies the reactive gas including one of O 2 , O 3 , plasma O 2 , H 2 O, NO 2 , NO, N 2 O (nitrous oxide), CO 2 , H 2 O 2 , HCOOH, CH 3 COOH, (CH 3 CO) 2 O, and combinations thereof.

4. The method according to claim 1 , wherein the forming further comprises:
vaporizing a source gas including the aluminum compound;
forming an A1 source-adsorbed layer on the substrate by supplying the vaporized source gas onto the substrate; and
supplying the reactive gas onto the A1 source-adsorbed layer.

5. A method of fabricating an integrated circuit device, the method comprising:
forming a lower structure on a substrate; and
forming an aluminum oxide film on the lower structure by maintaining the substrate at a temperature from about 350° C. to about 550° C. using an aluminum compound represented by Chemical Formula (I):

wherein each of R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , and R 8 are independently a hydrogen atom, a halogen atom, a C1 to C7 substituted or unsubstituted alkyl group, a C2 to C7 substituted or unsubstituted alkenyl group, a C2 to C7 substituted or unsubstituted alkynyl group, or a C4 to C20 substituted or unsubstituted aromatic or alicyclic hydrocarbon group; and
wherein the forming forms the aluminum oxide film by sequentially supplying the aluminum compound and a reactive gas onto the substrate, the reactive gas including an oxidative gas.

6. The method according to claim 5 , wherein the forming forms the aluminum oxide film using the aluminum compound represented by Chemical Formula (II):

wherein each of R1 and R5 are independently a C1 to C7 alkyl group.

7. The method according to claim 5 , wherein the forming a lower structure comprises:
alternately stacking a plurality of insulating layers and a plurality of sacrificial layers on the substrate, the plurality of insulating layers and the plurality of sacrificial layers extending parallel to the substrate;
etching the plurality of sacrificial layers and the plurality of insulating layers to form an opening penetrating the plurality of sacrificial layers and the plurality of insulating layers; and
removing the plurality of sacrificial layers through the opening to form a plurality of gate spaces, each of the gate spaces between two insulating layers among the plurality of insulating layers,
the forming the aluminum oxide film forms the aluminum oxide film in the plurality of gate spaces by supplying the aluminum compound into the plurality of gate spaces through the opening at the temperature of about 350° C. to about 550° C.

8. The method according to claim 7 , further comprising:
densifying the aluminum oxide film by annealing the aluminum oxide film at a second temperature that is higher than the temperature after the forming an aluminum oxide film.

Assignees

• Samsung Electronics Co Ltd
• Dnf Co Ltd

Inventors

• Park Gyu-Hee
• Lim Jae-Soon
• Cho Youn-Joung
• Kim Myong-Woon
• Lee Sang-Ick
• LEE Sung-duck
• Cho Sung-Woo

Classifications

• H10P50/283

  by chemical means · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P14/6518

  by introduction of substances into an already-existing insulating layer · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/668

  the materials being characterised by the deposition precursor materials · CPC title