Wafer processing apparatus for combined high-pressure process and vacuum process, and wafer processing method using decompression
US-2024339338-A1 · Oct 10, 2024 · US
US10207349B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10207349-B2 |
| Application number | US-201314086146-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 21, 2013 |
| Priority date | Nov 29, 2012 |
| Publication date | Feb 19, 2019 |
| Grant date | Feb 19, 2019 |
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In the present disclosure, the high-pressure chamber includes a chamber main body including a flat rectangular parallelepiped block of a metal which is formed with a flat cavity that serves as a substrate processing space in which a processing using a high-pressure fluid is performed on a substrate, and the substrate processing space being formed by machining the block from one of faces of the block other than the widest face towards another face opposing thereto. In a case where the cavity is constituted as a through hole, the though hole is provided with a cover configured to open or close the cavity on one side of the through hole, and a second block configured to air-tightly seal the cavity on the other side.
Opening claim text (preview).
What is claimed is: 1. A high-pressure container comprising: a container body including a flat rectangular parallelepiped block of a metal which is formed with a flat cavity that serves as a substrate processing space in which a processing using a high-pressure fluid is performed on a substrate, the flat cavity being formed by machining the flat rectangular parallelepiped block from one of faces of the flat rectangular parallelepiped block other than a widest face towards another face opposing thereto; and a cover configured to open/close the substrate processing space, wherein at least one of inner wall surfaces of the flat cavity is coated with a plating layer of a noble metal, and an electroless nickel plating layer is interposed between the inner wall surfaces of the flat cavity and the plating layer of the noble metal, and a thickness of the plating layer of the noble metal is about 0.2 μm. 2. The high-pressure container of claim 1 , wherein the container body is formed with a through hole on at least one of the faces of the block by the machining, and one end of the through hole is air-tightly sealed by a metal member. 3. The high-pressure container of claim 2 , wherein the machining is a wire cut electric discharge machining. 4. The high-pressure container of claim 1 , wherein the machining is performed by a die-sinking electric discharge machining in which an electrode formed in a shape corresponding to a shape of the cavity is sequentially brought into close proximity to the block so as to form a cavity which is not penetrated. 5. The high-pressure container of claim 1 , wherein the widest face has a short side and a long side that is longer than the short side, and the face on which the cavity is opened is a face at the short side. 6. The high-pressure container of claim 1 , further comprising a substrate holding unit configured to restrain a position of the substrate such that the substrate is opposite to the widest face. 7. The high-pressure container of claim 1 , wherein a distance between the inner wall surfaces of the cavity is in a range of 5 mm to 15 mm. 8. A high-pressure container comprising: a container body including a block of metal in which a flat cavity is opened on at least one of faces serving as a processing space for a substrate, wherein a plating layer of a noble metal is formed on an inner wall surface of the block, and a cover is provided to open or close the processing space, thereby allowing a processing on the substrate using a high-pressure fluid, an electroless nickel plating layer is interposed between the inner wall surface of the block and the plating layer of the noble metal, and a thickness of the plating layer of the noble metal is about 0.2 μm. 9. The high-pressure container of claim 8 , wherein the block has a flat rectangular parallelepiped shape, and the at least one of faces is a face other than a widest face of all faces of the block. 10. The high-pressure container of claim 9 , wherein the widest face has a short side and a long side that is longer than the short side and the face on which the cavity is opened is a face at the short side. 11. The high-pressure container of claim 9 , further comprising a substrate holding unit configured to restrain a position of the substrate such that the substrate is opposite to the widest face. 12. The high-pressure container of claim 9 , wherein a distance between inner wall surfaces of the cavity is in a range of 5 mm to 15 mm. 13. The high-pressure container of claim 8 , wherein the cavity of the block penetrates from one face to another face opposing thereto, and a metal member is air-tightly bonded to one face among the faces of the block on which a through hole is opened. 14. A substrate processing apparatus, comprising: the high-pressure container of claim 1 ; a fluid supply line connected to the high-pressure container and configured to supply a high-pressure fluid or a row material fluid that becomes the high-pressure fluid when performing at least one of heating and pressurization; and a fluid discharge line configured to discharge the high-pressure fluid in the high-pressure container.
involving removal of lid, door or cover · CPC title
characterised by the construction of the processing chambers, e.g. modular processing chambers · CPC title
Apparatus for sealing, encapsulating, glassing, decapsulating or the like · CPC title
Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title
Handling or holding of wafers, substrates or devices during manufacture or treatment thereof · CPC title
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