Pellicle fabrication methods and structures thereof

Patent metadata

Field	Value
Publication number	US-10162258-B2
Application number	US-201615381033-A
Country	US
Kind code	B2
Filing date	Dec 15, 2016
Priority date	Dec 15, 2016
Publication date	Dec 25, 2018
Grant date	Dec 25, 2018

Abstract

A method for fabricating a pellicle includes forming a first dielectric layer over a back surface of a substrate. After forming the first dielectric layer, and in some embodiments, a graphene layer is formed over a front surface of the substrate. In some examples, after forming the graphene layer, the first dielectric layer is patterned to form an opening in the first dielectric layer that exposes a portion of the back surface of the substrate. Thereafter, while using the patterned first dielectric layer as a mask, an etching process may be performed to the back surface of the substrate to form a pellicle having a pellicle membrane that includes the graphene layer.

First claim

What is claimed is:

1. A method, comprising:
forming a first dielectric layer over a back surface of a substrate;
after forming the first dielectric layer, forming a graphene layer over a front surface of the substrate;
after forming the graphene layer, patterning the first dielectric layer to form an opening in the first dielectric layer that exposes a portion of the back surface of the substrate;
while using the patterned first dielectric layer as a mask, performing an etching process to the back surface of the substrate to form a pellicle having a pellicle membrane that includes the graphene layer.

2. The method of claim 1 , further comprising:
prior to forming the graphene layer over the front surface of the substrate;

forming a second dielectric layer over the front surface of the substrate;
forming a metal layer over the second dielectric layer; and
forming the graphene layer over the metal layer.

3. The method of claim 2 , further comprising:
performing the etching process, wherein the etching process etches a portion of the second dielectric layer and a portion of the metal layer, thereby forming the pellicle having the pellicle membrane that includes the graphene layer.

4. The method of claim 1 , further comprising:
prior to forming the graphene layer over the front surface of the substrate, forming a silicon carbide (SiC) layer over the front surface of the substrate; and
forming the graphene layer over the SiC layer;
wherein performing the etching process forms the pellicle having the pellicle membrane that includes the graphene layer and the SiC layer.

5. The method of claim 4 , further comprising:
prior to patterning the first dielectric layer to form the opening in the first dielectric layer, forming a first protection layer over the SiC layer; and
forming a second protection layer over the first protection layer.

6. The method of claim 5 , wherein the first protection layer includes at least one of an amorphous silicon layer and a nitride layer, and wherein the second protection layer includes a polymer layer.

7. The method of claim 5 , further comprising:
after forming the pellicle having the pellicle membrane that includes the graphene layer and the SiC layer, removing the first protection layer and the second protection layer.

8. The method of claim 1 , further comprising:
after forming the pellicle having the pellicle membrane that includes the graphene layer, forming a capping layer over the graphene layer, wherein the capping layer has a thickness equal to or less than about 10 nm.

9. The method of claim 8 , wherein the capping layer includes one or more of rhodium (Rh), ruthenium (Ru), technetium (Tc), molybdenum (Mo), niobium (Nb), zirconium (Zr), titanium (Ti), neodymium (Nd), calcium (Ca), beryllium (Be), rubidium (Rb), lanthanum (La), cerium (Ce), barium (Ba), bromine (Br), sodium (Na), selenium (Se), cesium (Cs), potassium (K), phosphorous (P), europium (Eu), praseodymium (Pr), samarium (Sm), tungsten (W), vanadium (V), hafnium (Hf), dysprosium (Dy), gadolinium (Gd), lithium (Li), boron carbide, silicon carbide, carbon, silicon nitride, silicon, and alloys or compounds thereof.

10. The method of claim 1 , wherein a transmittance of the pellicle membrane is greater than or equal to about 90%.

11. The method of claim 4 , wherein a carbon content of the SiC layer is greater than about 20%.

12. A method, comprising:
forming a graphene layer over a substrate;
mounting, with an adhesive, a pellicle frame to the graphene layer; and
separating the graphene layer from the substrate while the pellicle frame remains mounted to the graphene layer, thereby providing a pellicle having a pellicle membrane including the graphene layer.

13. The method of claim 12 , further comprising:
prior to forming the graphene layer over the substrate, forming a dielectric layer over the substrate, wherein the substrate includes a semiconductor substrate; and
forming the graphene layer over the dielectric layer.

14. The method of claim 13 , further comprising:
forming the dielectric layer, wherein the dielectric layer includes a nitride layer; and
performing a wet etching process to separate the graphene layer from the nitride layer.

15. The method of claim 12 , further comprising:
forming the graphene layer over the substrate, wherein the substrate includes a metal foil; and
etching the metal foil to separate the graphene layer from the metal foil.

16. The method of claim 15 , wherein the metal foil includes at least one of a nickel (Ni) metal foil, a copper (Cu) metal foil, and a Cu—Ni metal foil.

17. The method of claim 12 , further comprising:
after separating the graphene layer from the substrate, forming a capping layer over the graphene layer, wherein the capping layer has a thickness equal to or less than about 10 nm.

18. The method of claim 17 , wherein the capping layer includes one or more of rhodium (Rh), ruthenium (Ru), technetium (Tc), molybdenum (Mo), niobium (Nb), zirconium (Zr), titanium (Ti), neodymium (Nd), calcium (Ca), beryllium (Be), rubidium (Rb), lanthanum (La), cerium (Ce), barium (Ba), bromine (Br), sodium (Na), selenium (Se), cesium (Cs), potassium (K), phosphorous (P), europium (Eu), praseodymium (Pr), samarium (Sm), tungsten (W), vanadium (V), hafnium (Hf), dysprosium (Dy), gadolinium (Gd), lithium (Li), boron carbide, silicon carbide, carbon, silicon nitride, silicon, and alloys or compounds thereof.

19. A structure, comprising:
an EUV lithographic mask including a patterned surface; and
a pellicle mounted to the EUV lithographic mask, wherein the pellicle includes a pellicle frame and a pellicle membrane suspended by the frame a distance away from the patterned surface;
wherein the pellicle includes a carbon-based pellicle membrane including one of a graphene pellicle membrane, a graphene-silicon carbide (SiC) pellicle membrane, and a SiC pellicle membrane.

20. The method of claim 18 , wherein the pellicle includes one of the graphene-SiC pellicle membrane and the SiC pellicle membrane, and wherein a carbon content of the SiC is greater than about 20%.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Lin Yun-Yue
• Chen Hsuan-Chen
• Lin Chih-Cheng
• Lee Hsin-Chang
• Ku Yao-Ching
• Lo Wei-Jen
• Yen Anthony
• Lin Chin-Hsiang
• Chien Mark

Classifications

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P76/403

  for lift-off processes · CPC title

• H10P76/405 Primary

  characterised by their composition, e.g. multilayer masks · CPC title

• G03F1/62 Primary

  Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof · CPC title

• G03F1/24

  Reflection masks; Preparation thereof · CPC title