Pellicle for EUV lithography

Patent metadata

Field	Value
Publication number	US-9958770-B2
Application number	US-201515304275-A
Country	US
Kind code	B2
Filing date	Apr 15, 2015
Priority date	Apr 17, 2014
Publication date	May 1, 2018
Grant date	May 1, 2018

Abstract

A pellicle for EUV lithography is provided. The pellicle for EUV lithography may improve strength of a pellicle film by having a strength reinforcing layer including a first coupling layer and a carbon nanostructure disposed on a first inorganic layer, the first coupling layer here increase coupling strength between the first inorganic layer and the strength reinforcing layer, and a strength reinforcing layer including a carbon nanostructure. Also, a pellicle for EUV lithography according to another embodiment and a method of fabricating the same are provided. The pellicle for EUV lithography includes a plurality of holes and is a porous thin film made of a material with an extinction coefficient less than or equal to 0.02, and a diameter of the holes is less than or equal to 1 μm. Accordingly, improved strength is achievable because thickness may be made large with still having high EUV transmission.

First claim

The invention claimed is:

1. A pellicle for EUV lithography, comprising:
a first inorganic layer including an inorganic material with an extinction coefficient less than or equal to 0.02;
a first coupling layer disposed on the first inorganic layer and including an organic material having a functional group belonging to the catechol group; and
a strength reinforcing layer disposed on the first coupling layer and including a carbon nanostructure,
wherein the first coupling layer increases coupling strength between the first inorganic layer and the strength reinforcing layer.

2. The pellicle for EUV lithography of claim 1 , wherein the first inorganic layer includes Zr, Mo, Y, Si, Rb, Sr, Nb, or Ru.

3. The pellicle for EUV lithography of claim 1 , wherein the first coupling layer includes dopamine, polydopamine, norepinephrine, polynorepinephrine, epinephrine, or polyepinephrine.

4. The pellicle for EUV lithography of claim 1 , wherein a thickness of the first coupling layer is less than or equal to 10 nm.

5. The pellicle for EUV lithography of claim 1 , wherein the carbon nanostructure includes graphene or carbon nanotubes.

6. The pellicle for EUV lithography of claim 5 , wherein the strength reinforcing layer is a carbon nanotube mesh.

7. The pellicle for EUV lithography of claim 1 , further comprising:
a second coupling layer disposed on the strength reinforcing layer and including an organic material having a functional group belonging to the catechol group; and
a second inorganic layer disposed on the second coupling layer and including an inorganic material with an extinction coefficient less than or equal to 0.02.

8. The pellicle for EUV lithography of claim 7 , wherein the second coupling layer increases coupling strength between the strength reinforcing layer and the second inorganic layer.

9. The pellicle for EUV lithography of claim 7 , wherein the second coupling layer includes dopamine, polydopamine, norepinephrine, polynorepinephrine, epinephrine, or polyepinephrine.

10. The pellicle for EUV lithography of claim 7 , wherein the second inorganic layer includes Zr, Mo, Y, Si, Rb, Sr, Nb, or Ru.

11. A pellicle for EUV lithography which is a porous thin film pellicle including a plurality of holes and a material with an extinction coefficient less than or equal to 0.02, wherein a diameter of the holes is less than or equal to 1 μm.

12. The pellicle for EUV lithography of claim 11 , wherein the porous thin film pellicle includes Zr, Mo, Y, Si, Rb, Sr, Nb, or Ru.

13. The pellicle for EUV lithography of claim 11 , further comprising a cap layer disposed on the porous thin film pellicle and is made of a material with an extinction coefficient less than or equal to 0.02.

14. A method of fabricating a pellicle for EUV lithography, the method comprising:
preparing a porous structure with nano-sized holes;
forming a template with a shape that is complementary to the shape of the porous structure, by injecting a template material into the holes of the porous structure;
removing the porous structure;
forming a porous thin film pellicle including the shape of the porous structure by coating the template with a pellicle material; and
removing the template.

15. The method of claim 14 , wherein the porous structure includes anodized aluminum.

16. The method of claim 14 , wherein the template material is PDMS or PMMA.

17. The method of claim 14 , wherein the injecting the template material into the holes of the porous structure includes increasing filling rate of the holes of the porous structure being filled with the template material by maintaining a vacuum for a specific duration after the injecting the template material.

18. The method of claim 14 , wherein the pellicle material includes Zr, Mo, Y, Si, Rb, Sr, Nb, or Ru.

Assignees

• Univ Hanyang Ind Univ Coop Found

Inventors

• Ahn Jinho
• Lee Jaeuk
• Hong Seongchul
• Lee Seungmin
• Lee Kilbock
• Kim Jungsik
• Kim Junghwan

Classifications

• H10P76/00

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title

• H01L21/027

  Electricity · mapped topic

• G03F1/62 Primary

  Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof · CPC title

• G03F7/2004

  characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light · CPC title