Method of making an extreme ultraviolet pellicle

Patent metadata

Field	Value
Publication number	US-9664999-B2
Application number	US-201615245499-A
Country	US
Kind code	B2
Filing date	Aug 24, 2016
Priority date	Apr 23, 2014
Publication date	May 30, 2017
Grant date	May 30, 2017

Abstract

The present disclosure relates to an extreme ultraviolet (EUV) pellicle having a pellicle film connected to a pellicle frame. In some embodiments, the EUV pellicle has a substrate, and an adhesive material disposed onto the substrate. A pellicle frame is connected to the substrate by way of the adhesive material. The pellicle frame is configured to mount the substrate to an extreme ultraviolet (EUV) reticle.

First claim

What is claimed is:

1. An extreme ultraviolet (EUV) pellicle, comprising:
a substrate;
an adhesive material disposed onto the substrate;
a pellicle frame connected to the substrate by way of the adhesive material and configured to mount the substrate to an extreme ultraviolet (EUV) reticle; and
wherein a surface of the substrate facing away from the pellicle frame comprises silicon continuously extending between outermost sidewalls of the substrate.

2. The EUV pellicle of claim 1 , wherein the substrate comprises one or more dopants arranged within the silicon along a horizontal line extending between the sidewalls of the substrate, and wherein the horizontal line is parallel to the surface of the substrate facing away from the pellicle frame.

3. The EUV pellicle of claim 2 , wherein the one or more dopants comprise hydrogen.

4. The EUV pellicle of claim 2 , wherein the one or more dopants comprise hydrogen and boron.

5. The EUV pellicle of claim 1 , wherein the substrate comprises a material having a Young's modulus that is greater than or equal to approximately 750 GPa.

6. The EUV pellicle of claim 5 , wherein the substrate further comprises:
a silicon layer contacting the material having a Young's modulus that is greater than or equal to approximately 750 GPa.

7. The EUV pellicle of claim 1 , wherein the substrate comprises carbon nanotubes, graphene, or diamond.

8. The EUV pellicle of claim 1 , wherein the substrate has a thickness in a range of between approximately 50 nm and approximately 200 nm.

9. The EUV pellicle of claim 8 , wherein the substrate has a thickness of approximately 100 nm.

10. An extreme ultraviolet (EUV) pellicle, comprising:
a substrate;
a pellicle frame configured to mount the substrate to an extreme ultraviolet (EUV) reticle; and
one or more dopants arranged within the substrate along a horizontal line parallel to a surface of the substrate facing away from the pellicle frame.

11. The EUV pellicle of claim 10 , wherein the one or more dopants are disposed along the surface of the substrate facing away from the pellicle frame.

12. The EUV pellicle of claim 10 , wherein the one or more dopants comprise a first dopant species and a second dopant species that is different than the first dopant species.

13. The EUV pellicle of claim 10 , further comprising:
an adhesive material disposed on substrate and configured to couple the substrate to the pellicle frame.

14. The EUV pellicle of claim 10 , wherein the substrate comprises:
a silicon layer; and
a material contacting the silicon layer and having a Young's modulus of greater than or equal to approximately 750 GPa.

15. The EUV pellicle of claim 14 , the material comprises carbon nanotubes, graphene, or diamond.

16. An extreme ultraviolet (EUV) pellicle, comprising:
a substrate;
an adhesive material disposed onto a first surface of the substrate and configured to mount the substrate to a pellicle frame; and
wherein the substrate comprises one or more dopant species disposed along a second surface of the substrate that faces away from the adhesive material.

17. The EUV pellicle of claim 16 , wherein the second surface of the substrate comprises a first dopant species and a second dopant species that is different than the first dopant species.

18. The EUV pellicle of claim 16 , wherein the one or more dopant species comprise hydrogen.

19. The EUV pellicle of claim 16 , further comprising:
a pellicle frame connected to the substrate by way of the adhesive material and configured to mount the substrate to an extreme ultraviolet (EUV) reticle.

20. The EUV pellicle of claim 19 , wherein the substrate has a thickness in a range of between approximately 50 nm and approximately 200 nm.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Shih Chih-Tsung
• Lee Tien-Hsi
• Chen Chia-Jen
• Chien Shang-Chieh
• Yu Shinn-Sheng
• Chen Jeng-Horng
• Yen Anthony

Classifications

• B29C2071/022

  Annealing · CPC title

• G03F1/62

  Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof · CPC title

• G03F1/64 Primary

  characterised by the frames, e.g. structure or material, including bonding means therefor · CPC title

• G03F7/2002

  with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image · CPC title

• B29C71/02

  Thermal after-treatment {(B29C71/0063 and B29C71/0072 take precedence)} · CPC title