Apparatus and techniques for decelerated ion beam with no energy contamination

Patent metadata

Field	Value
Publication number	US-10147584-B2
Application number	US-201715463473-A
Country	US
Kind code	B2
Filing date	Mar 20, 2017
Priority date	Mar 20, 2017
Publication date	Dec 4, 2018
Grant date	Dec 4, 2018

Abstract

An ion implantation system may include an ion source to generate an ion beam, a substrate stage disposed downstream of the ion source; and a deceleration stage including a component to deflect the ion beam, where the deceleration stage is disposed between the ion source and substrate stage. The ion implantation system may further include a hydrogen source to provide hydrogen gas to the deceleration stage, wherein energetic neutrals generated from the ion beam are not scattered to the substrate stage.

First claim

What is claimed is:

1. An ion implantation system, comprising:
an ion source to generate an ion beam;
a substrate stage disposed downstream of the ion source;
a deceleration stage including a component to deflect the ion beam, the deceleration stage disposed between the ion source and substrate stage; and
a hydrogen source to provide hydrogen gas to the deceleration stage,
wherein energetic neutrals generated from the ion beam are not scattered to the substrate stage.

2. The ion implantation system of claim 1 , wherein the deceleration stage comprises a curved shape, wherein the deceleration stage does not provide a line of sight path for the ion beam from an entrance to an exit of the deceleration stage.

3. The ion implantation system of claim 1 , comprising a hydrogen port to transport the hydrogen gas directly into the deceleration stage.

4. The ion implantation of claim 1 , the deceleration stage comprising a partial pressure of hydrogen of at least 5×10 −6 Torr.

5. The ion implantation system of claim 1 , the hydrogen source comprising a plurality of hydrogen ports to provide hydrogen to the ion beam, wherein at least one hydrogen port is disposed in the deceleration stage.

6. The ion implantation system of claim 1 , the hydrogen source comprising a local hydrogen generator.

7. The ion implantation system of claim 6 , the hydrogen source comprising an electrolytic hydrogen generator.

8. The ion implantation system of claim 1 , wherein the ion beam comprises boron ions having an ion energy of 50 keV or less.

9. A method of ion implantation, comprising:
generating an ion beam;
decelerating the ion beam in a deceleration stage;
altering a trajectory of the ion beam during the decelerating; and
directing hydrogen gas into the deceleration stage during the decelerating.

10. The method of claim 9 , wherein the hydrogen is directed through a port in the deceleration stage.

11. The method of claim 9 , wherein a gas pressure in the deceleration stage is at least 5×10 −6 Torr.

12. The method of claim 9 , comprising generating the hydrogen gas using a local hydrogen generator.

13. The method of claim 12 , the local hydrogen generator comprising an electrolytic hydrogen generator.

14. A deceleration stage to treat an ion beam, comprising:
a housing to contain the ion beam;
a deceleration assembly to decelerate the ion beam, the deceleration assembly disposed upstream of a substrate stage, and including a first plurality of electrodes disposed within the housing;
a deflection assembly to deflect the ion beam, the deflection assembly including a second plurality of electrodes disposed within the housing, wherein a trajectory of the ion beam is altered; and
a hydrogen source to provide hydrogen gas inside the housing,
wherein a partial pressure of hydrogen inside the housing is greater than 10 −6 Torr.

15. The deceleration stage of claim 14 , wherein a partial pressure of hydrogen within the housing is less than 5×10 −5 Torr.

16. The deceleration stage of claim 14 , wherein energetic neutrals generated from the ion beam are not deflected to the substrate stage.

17. The deceleration stage of claim 14 , wherein the ion beam is deflected from an initial trajectory entering the deceleration stage through an angle of greater than 15 degrees.

18. The deceleration stage of claim 17 , wherein the deceleration stage does not provide a line of site path for the ion beam from an entrance to an exit of the deceleration stage.

Assignees

• Varian Semiconductor Equipment Ass Inc

Inventors

• Sinclair Frank
• Tieger Daniel
• Becker Klaus

Classifications

• H01J2237/022

  Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube · CPC title

• H01J37/3171 Primary

  for ion implantation · CPC title

• H01J37/04

  Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement {(H01J37/32009, H01J37/32623, H01J37/3266, H01J37/32697 take precedence; electron or ion-optical systems for localised treatment of objects H01J37/3007)} · CPC title

• H01J2237/04756

  with electrostatic means · CPC title

• H01J2237/0042

  Deflection of neutralising particles · CPC title